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STMicroelectronics N.V.

STMicroelectronics N.V.- DDR SDRAM Memory Chips

STMicroelectronics N.V., commonly known as ST, was formed in 1987 through the merger of Italian SGS Microelettronica and French Thomson Semiconducteurs. Headquartered in Geneva, Switzerland, it is one of the largest semiconductor companies globally. The company went public in 1994 and is listed on the New York Stock Exchange (NYSE: STM), Euronext Paris, and Borsa Italiana in Milan. STMicroelectronics serves customers across a broad spectrum of electronics applications with innovative semiconductor solutions. Its core business areas include automotive, industrial, personal electronics, and communications infrastructure. The company boasts an extensive product portfolio featuring microcontrollers (MCU), specifically the STM32 family which is widely adopted for embedded applications. In analog and mixed-signal ICs, ST offers operational amplifiers, comparators, and data converters, while its power management products include a wide range of voltage regulators and motor drivers. ST is a leader in power discrete and modules, such as MOSFETs, IGBTs, and silicon carbide (SiC) devices, crucial for high-efficiency power conversion. The sensor product line covers MEMS sensors like accelerometers, gyroscopes, and environmental sensors, as well as time-of-flight ranging sensors. ST is recognized as a top-tier semiconductor company, consistently ranking among the top 10 globally by revenue, and holds leading market positions in automotive ICs, MEMS sensors, and general-purpose MCUs, leveraging its advanced manufacturing and R&D strengths.

03

DDR SDRAM Memory Chips - 型号列表

205 parts in total

Memory Size

Access Time

Matchcode

Weight

Manufacturer

Density

Memory

Spg

Voltage Rating

MOQ

Part Status

Voltage - Input (Min)

Package Cooled

Type

Factory Pack Quantity

Speed

Current - Output

Voltage - Supply (Min)

Width

Length

Package / Case

Size / Dimension

Memory Organization

Other Names

Current - Average Rectified (Io)

Unit Pack

Standard Package

Tariff No

Memory Type

Current - Bias

Data Converters

Voltage - Supply

Capacitance - Input

Current Rating (Max)

Height

Number of Pins

Length - Overall

Supplier Device Package

Standard Leadtime

Standard Package Name

Frequency

Interface

Clock Frequency

Frequency - Max

Current - Leakage

Capacitance @ Vr, F

Write Cycle Time - Word, Page

Packaging

Package Quantity

Number of Positions

Shell Size - Insert

Base Unit

Memory Format

Printed Circuit Board

Operating Temperature

Product Category

Features

Series

RAM Size

RoHS

Voltage - VCCB

Rise / Fall Time (Typ)

Switch Time (Ton, Toff) (Max)

Common Mode Transient Immunity (Min)

Termination

Mounting Type

Material Finish

Number of Units

Maximum Temperature Limit

Thermal Resistance @ Natural

Operating Temperature - Junction

Clock Rate

Mounting Style

Utilized IC / Part

Current - Supply

Function

Mfr Part #Quantity AvailablePriceStandard PackageRoHSEU RoHSInterfaceMemory SizeMemory TypeVoltage RatingVoltage - SupplyVoltage - Supply (Min)PackagingMounting TypePackage / CasePackage CooledPackage QuantityNumber of PositionsOperating TemperatureWidthSupplier Device PackageTypeProduct CategoryFactory Pack QuantityMounting StyleRad HardenedAccess TimeDensityManufacturerStandard Package NameWeightNumber of PinsLength - OverallShell Size - InsertDELETEDPrinted Circuit BoardSVHCTariff NoMemoryCurrent - OutputCommon Mode Transient Immunity (Min)Material FinishCurrent Rating (Max)HeightLengthMemory FormatCurrent - Average Rectified (Io)SpeedMOQUnit PackVoltage - Input (Min)Size / DimensionData ConvertersOperating Temperature - JunctionAutomotiveLeadfree DefinFrequencyVoltage - VCCBMatchcodeStandard LeadtimeMaximum Temperature LimitThermal Resistance @ NaturalBus ConnectionCurrent - BiasCurrent - LeakageVoltage - Output 4Capacitance - InputRise / Fall Time (Typ)Switch Time (Ton, Toff) (Max)ESD ProtectionFrequency - MaxWrite Cycle Time - Word, PageLead StyleSpgProgrammableNumber of UnitsMemory OrganizationFeaturesVoltage - Gate Trigger (Vgt) (Max)Base UnitClock RateClock FrequencyCapacitance @ Vr, FNumber of Cores/Bus WidthPart StatusTerminationOther NamesRAM SizeDate FormatTime FormatReset TimeTemperature RangeFunctionBattery SeriesCurrent - SupplyPower Dissipation (Max)SeriesNumber of CellsVoltage - Supply (Vcc/Vdd)Delay TimeTiming Initiate MethodUtilized IC / PartProgrammable FeaturesToleranceInput Logic Level - LowInput Logic Level - HighNumber of Bits per ElementNumber of WordsPower - InputIdle Current, Typ @ 25degCBit CountStructureNumber of CharactersRAM Capacity/InstalledCCT (K)
M24256-BWMN6P
9
M24256-BWMN6P

EEPROM Serial-I2C 256K-bit 32K x 8 3.3V/5V 8-Pin SO N IC EEPROM 256KBIT 1MHZ 8SO M24256-BWMN6P, Serial EEPROM Memory 256kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC IC, EEPROM SERIAL 256K, SMD, SO-8-8 EEPROMSERIAL256K,SMD,SO-8-8PKG Memory; EEPROM; I2C; 32kx8bit; 2.5÷5.5V; SO8 EEPROM I²C 32 k x 8 Bit SO-8, M24256-BWMN6P, ST STMicroelectronics M24256-BWMN6TP 串行 EEPROM 存储器, 256kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装 EEPROM 256K (32Kx8)

stmicroelectronics

17041: ¥3.256Rail / TubeLead free / RoHS CompliantCompliantSerial-I2C256K (32K x 8)EEPROM3.3|5 V2.5V5.5 VTubeSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm8-SOI2C---No450 ns256 Kb32Kx8SOIC0.002:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423261:32K x 8bit2 mAIndustrial:-2.51.25mm4.9mmEEPROMs - Serial-1MHz11003.5to6.5V4.9 x 3.9 x 1.25mm40(Min) Year85CNORoHS-conform0.4 MHz:5VM24256-BWMN6P5 weeks85°C-40°C-2mA(Read),5mA(Write)±2μA0.4V8pF50ns50nsYes1 MHz4MGull-wing500Yes132kx8bit-2.5 to 5.5 V:24256-:1MHz8pF-:24256:SMD------------:5V----------------
M24C01-WMN6TP
5
M24C01-WMN6TP

EEPROM Serial-I2C 1K-bit 128 x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 1KBIT 400KHZ 8SO M24C01-WMN6TP, Serial EEPROM Memory 1kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 1K EEPROM, 1KBIT, I2C, 8SOIC, REEL E-EPROM1K(24C01)SO08.15JED E²ser.I²C 128x8 SO8 2.5V

stmicroelectronics

80135: ¥0.9792Tape & ReelLead free / RoHS CompliantCompliantSerial-I2C1K (128 x 8)EEPROM3.3|5 V2.5V5.5 VTape and ReelSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm8-SOI2CEEPROM2500SMD/SMTNo900 ns1 Kb128x8SOIC0.003:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423300:128 x 82 mAIndustrial:MSL 1 - Unlimited2 mA1.25mm4.9mmEEPROMs - Serial2 mA400kHz250025003.5to6.5V4.9 x 3.9 x 1.25mm40(Min) Year85CNORoHS-conform0.4 MHz-M24C01-WMN6TP5 weeks85°C-40°C-2mA±2μA0.4V8pF(SDA),6pF(OtherPins)50ns50nsYes0.4 MHz1MGull-wing-Yes---2.5 to 5.5 V-0.4 MHz:400kHz----497-8631-1----------------------------
M24C02-WMN6TP
7
M24C02-WMN6TP

EEPROM Serial-I2C 2K-bit 256 x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 2KBIT 400KHZ 8SO M24C02-WMN6TP, Serial EEPROM Memory 2kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 2K EEPROM, 2KBIT, I2C, 8SOIC, REEL SERIALEEPROM,256X8,CMOS,SOP,8PIN,PLASTIC STMicroelectronics M24C02-WMN6P 串行 EEPROM 存储器, 2kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装

stmicroelectronics

50005000: ¥0.884Cut TapeLead free / RoHS CompliantCompliantSerial-I2C2K (256 x 8)EEPROM3.3|5 V2.5V5.5 VTape and ReelSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm8-SOI2CEEPROM2500SMD/SMTNo900 ns2 Kb256x8SOIC0.003:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423300:256 x 82 mAIndustrial:MSL 1 - Unlimited2 mA1.25mm4.9mmEEPROMs - Serial2 mA400kHz250025003.5to6.5V4.9 x 3.9 x 1.25mm40(Min) Year85CNORoHS-conform0.4 MHz-M24C02-WMN6TP5 weeks85°C-40°C-2mA±2μA0.4V8pF(SDA),6pF(OtherPins)50ns50nsYes0.4 MHz1MGull-wing-Yes---2.5 to 5.5 V-0.4 MHz:400kHz----497-8552-1----------------------------
M24C16-WMN6TP
6
M24C16-WMN6TP

EEPROM Serial-I2C 16K-bit 2K x 8 3.3V/5V 8-Pin SO N T/R M24C16-WMN6TP, Serial EEPROM Memory 16kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 16k EEPROM, 16KBIT, I2C, 8SOIC, REEL SERIALEEPROM,2KX8,CMOS,SOP,8PIN,PLASTIC Memory; EEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8 STMicroelectronics M24C16-WMN6P 串行 EEPROM 存储器, 16kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装

stmicroelectronics

200005000: ¥0.4141Tape & ReelCompliantCompliantSerial-I2C16kbitSerialEEPROM3.3|5 V2.5V5.5 VTape and ReelSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm-I2CEEPROM2500SMD/SMTNo900 ns16 Kb2Kx8SOIC0.003:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423300:2K x 8bit2 mAIndustrial:MSL 1 - Unlimited2 mA1.25mm4.9mm-2 mA-250025003.5to6.5V4.9 x 3.9 x 1.25mm40(Min) Year85CNORoHS-conform0.4 MHz-M24C16-WMN6TP5 weeks85°C-40°C-2mA±2μA0.4V8pF(SDA),6pF(OtherPins)50ns50nsYes0.4 MHz1MGull-wing2500Yes25002kx8bit-2.5 to 5.5 V-0.4 MHz:400kHz---------------------------------
M24C64-WMN6TP
7
M24C64-WMN6TP

EEPROM Serial-I2C 64K-bit 8K x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 64KBIT 400KHZ 8SO M24C64-WMN6TP, Serial EEPROM Memory 64kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S. I2C 64k EEPROM, 64KBIT, I2C, 8SOIC, REEL E-EPROM64K(24C64)SO08.15JE Memory; EEPROM; I2C; 8kx8bit; 2.5÷5.5V; SO8 STMicroelectronics M24C64-WMN6P 串行 EEPROM 存储器, 64kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装

stmicroelectronics

175002500: ¥1.8591Tape & ReelLead free / RoHS CompliantCompliantSerial-I2C64K (8K x 8)EEPROM3.3|5 V2.5V5.5 VTape and ReelSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm8-SOI2CEEPROM2500SMD/SMTNo450 ns64 Kb8Kx8SOIC0.003:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423300:8K x 8bit5 mAIndustrial:MSL 1 - Unlimited2 mA1.25mm4.9mmEEPROMs - Serial5 mA400kHz250025003.1to6.1V4.9 x 3.9 x 1.25mm200(Min) Year85CNORoHS-conform0.4 MHz-M24C64-WMN6TP5 weeks85°C-40°C-2mA(Read),5mA(Write)±2μA0.4V8pF50ns50nsYes1 MHz4MGull-wing2500Yes25008kx8bit-2.5 to 5.5 V-0.4 MHz:1MHz8pF---497-8650-1----------------------------
M93C46-WMN6TP
6
M93C46-WMN6TP

EEPROM Serial-Microwire 1K-bit 128 x 8/64 x 16 3.3V/5V 8-Pin SO N T/R IC EEPROM 1KBIT 2MHZ 8SO M93C46-WMN6TP, Serial EEPROM Memory 1kbit, Serial-Microwire, 200ns 2.5 to 5.5V, 8-Pin SOIC EEPROM 1K (64x8 or 32x16) EEPROM, 1KBIT, MW, 8SOIC, REEL SERIALEEPROM1KBIT5.5V,8PINSOIC STMicroelectronics M93C46-WMN6P 串行 EEPROM 存储器, 1kbit, 串行 - Microwire接口, 200ns, 2.5 → 5.5 V, 8针 SOIC封装 E²ser. 1K x8/x16 SO8 2.5V

stmicroelectronics

600041: ¥1.666Tape & ReelLead free / RoHS CompliantCompliantSerial-Microwire1K (128 x 8 or 64 x 16)EEPROM3.3|5 V2.5V5.5 VTape and ReelSurface Mount8SO NSO NSO N8-40 to 85 °C3.90 mm8-SOMICROWIREEEPROM2500SMD/SMTNo200 ns1 Kb128x8|64x16SOIC0.003:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423300:128 x 82 mAIndustrial:MSL 1 - Unlimited2 mA1.25mm4.9mmEEPROMs - Serial2 mA2MHz250025003.5to6.5V4.9 x 3.9 x 1.25mm40(Min) Year85CNORoHS-conform2 MHz-M93C46-WMN6TP8 weeks85°C-40°C-2mA±2.5μA0.4V5pF50ns50nsYes2 MHz1MGull-wing-Yes---2.5 to 5.5 V-2 MHz:2MHz5pF---497-5090-1------------50ns0ns--------------
M93C56-WMN6P
9
M93C56-WMN6P

EEPROM SERL-MICROWIRE 2KBIT 256X8/128X16 3.3V/5V 8PIN SO EEPROM Serial-Microwire 2K-bit 256 x 8/128 x 16 3.3V/5V 8-Pin SO N Tube IC EEPROM 2KBIT 2MHZ 8SO M93C56-WMN6P, EEPROM Memory Chip 2kbit,, 4mm x, 8bit,, 200ns 2.5 to 5.5V, 8-Pin SO-8 MEMORY; 2KBIT EEPROM; 2.5 V (MIN.); 10MS; SO8; 0.7 V (MIN.); -0.45 V (MIN.) EEPROM 2K (256x8 or 128x16) EEPROM SERIAL 2K, SMD, 93C56, SOIC8 MEMORY;2KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.) Memory; EEPROM; Microwire; 256x8bit; 2.5÷5.5V; SO8 EEPROM 128 x 16 Bit / 256 x 8 Bit SO-8, M93C56-WMN6P, ST STMicroelectronics EEPROM 芯片, 2kbit, 256 x, 8bit, 200ns, 2.5 → 5.5 V, 8针 SOIC封装 E²ser. 2K x8/x16 SO8 2.5V

stmicroelectronics

58353: ¥1.5565100Lead free / RoHS CompliantCompliantSerial-Microwire2K (256 x 8 or 128 x 16)EEPROM2.5 V2.5V5.5 VTubeSurface MountSOP8SO-8SO N8-40°C ~ 85°C3.90 mm8-SOMICROWIREEEPROM2000SMD/SMTNo200ns2Kbit256x8|128x16SOIC0.000001:85(Max)1.65(Max)Compliant8:No SVHC (20-Jun-2013)85423261:256 x 8, 128 x 162 mAIndustrial:-2 mA1.5mm5mmEEPROMs - Serial2 mA2MHz1001003.5to6.5V5 x 4 x 1.5mm40 yr85CNORoHS-conform2 MHz:5VM93C56-WMN6P5 weeks85°C-40°C-2mA±2.5μA0.4V5pF50ns50nsYes2 MHz1MGull-wing1000Yes1256x8bit--:932 MHz:2MHz5pF-:93C56-------------:5V50ns0ns:M93C56-WMN6P-:10%–0.45V0.7V8bit256-------
M48Z12-150PC1
6
M48Z12-150PC1

NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin PCDIP Tube IC NVSRAM 16KBIT 150NS 24DIP NVRAM 16K (2Kx8) 150ns IC, SRAM, 16KB, 5V , 16kbit NVRAM 存储器, 4.5 → 5.5 V, 0 → +70 °C, 24针 PCDIP封装

stmicroelectronics

5331: ¥190.672Rail / TubeLead free / RoHS CompliantCompliantParallel16K (2K x 8)NVSRAM (Non-Volatile SRAM)4.55 V4.5 VTubeThrough Hole24PCDIPPCDIPPCDIP240 to 70 °C18.34(Max)24-PCDIP, CAPHAT®NVSRAMNVRAM14Through HoleNo150 ns16 Kb2Kx8CDIP0.003333:2434.8(Max)8.89(Max)Compliant24:No SVHC (20-Jun-2013)85423245:2K x 8bit80 mACommercial:-80--RAM80 mA150ns---------:5V----Parallel--------------:Internal Battery-:48---8 Bit-:Through Hole-----------------------------
M48Z02-150PC1
6
M48Z02-150PC1

NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin PCDIP Tube IC NVSRAM 16KBIT 150NS 24DIP NVRAM 16K (2Kx8) 150ns SRAM;16KbitSRAM;-0.3to7V;150;PCDIP24;0.8V(Max.);0.3V(Max.);0 NV-RAM 2 k x 8 Bit PCDIP-24, M48Z02-150PC1, ST STMicroelectronics , 16kbit SRAM 内存, 2K x 8, 4.75 → 5.5 V, 24针 PCDIP封装

stmicroelectronics

7711: ¥205.156Rail / TubeLead free / RoHS CompliantCompliantParallel16K (2K x 8)NVSRAM (Non-Volatile SRAM)4.755 V4.75 VTubeThrough Hole24PCDIPPCDIPPCDIP240 to 70 °C18.34mm24-PCDIP, CAPHAT®NVSRAMNVRAM14Through HoleNo150 ns16 Kb2Kx8CDIP-2434.8(Max)8.89(Max)Compliant24---80 mACommercial-808.89mm34.8mmRAM80 mA150ns--5.05to5.8V34.8 x 18.34 x 9.89mm10yrs.---------Parallel80mA±1μA0.4V10pF≤5ns≤5ns-------------10pF8 Bit----------80 mA1WM48Z02-----------4.75...5.5 V8Bit2K x 82K16Kbit-
M48Z58-70PC1
6
M48Z58-70PC1

NVRAM NVSRAM Parallel 64K-Bit 5V 28-Pin PCDIP Tube ZP8K X 85% IC NVSRAM 64KBIT 70NS 28DIP NVRAM 64K (8Kx8) 70ns ZEROPOWER SRAM 64K, 48Z58, DIP28 Memory; NV SRAM; 8kx8bit; 70ns; DIP28 STMicroelectronics , 64kbit SRAM 内存, 8K x 8 位, 1MHz, 4.75 → 5.5 V, 28针 PCDIP封装

stmicroelectronics

101: ¥156.6915Rail / TubeLead free / RoHS CompliantCompliantParallel64K (8K x 8)NVSRAM (Non-Volatile SRAM)4.755 V4.75 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34(Max)28-PCDIP, CAPHAT®NVSRAMNVRAM12Through HoleNo70 ns64 Kb8Kx8-0.000001:2839.88(Max)8.89(Max)Compliant28:No SVHC (20-Jun-2013)85423245:8K x 8bit50 mA-:-50--RAM50 mA70ns12012-------:5V----Parallel----------10-18kx8bit:Internal Battery-:48---8 Bit:48Z58-----:10Yr:Commercial-----------------------
M48Z35-70PC1
6
M48Z35-70PC1

NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin PCDIP Tube ZEROPOWER SRAM 32KX8 70NS DIP28 IC NVSRAM 256KBIT 70NS 28DIP NVRAM 256K (32Kx8) 70ns IC, SRAM ZEROPOWER 256K Memory; NV SRAM; 32kx8bit; 4.75÷5.5V; 70ns; DIP28 , 256kbit NVRAM 存储器, 4.75 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装

stmicroelectronics

2151: ¥203.522Rail / TubeLead free / RoHS CompliantCompliantParallel256K (32K x 8)NVSRAM (Non-Volatile SRAM)4.755 V4.75 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C-28-PCDIP, CAPHAT®NVSRAMNVRAM12Through HoleNo70ns256 Kb32Kx8-10.21:28--Compliant-:No SVHC (20-Jun-2013)85411000:32K x 8bit50 mACommercial:-50--RAM50 mA70ns12125.5V---NORoHS-conform-:5VM48Z35-70PC115 weeks70°C0°CParallel----------24-132kx8bit:Internal Battery-----8 Bit-:Through Hole-----------1-----------------
M93S66-WMN6P
3
M93S66-WMN6P

EEPROM Serial-Microwire 4K-Bit 256 x 16 3.3V/5V 8-Pin SO N Tray EEPROM Serial-Microwire 4K-bit 256 x 16 3.3V/5V 8-Pin SO N Tray IC EEPROM 4KBIT 2MHZ 8SO EEPROM 5.5V 4K (256x16) MEMORY;4KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.) Memory; EEPROM; Microwire; 256x16bit; 2.5÷5.5V; SO8

stmicroelectronics

761: ¥9.765Rail / TubeLead free / RoHS CompliantCompliantSerial-Microwire4K (256 x 16)EEPROM3.3|5 V2.5 V ~ 5.5 V2.5 VTraySurface Mount8SO NSOICSO N8-40 to 85 °C4(Max)8-SOmemoryEEPROM2000SMD/SMTNo-4 Kb256x16SOIC0.21 g-5(Max)1.65(Max)Compliant8---2 mAIndustrial-2 mA1.65 mm (Max)5 mm (Max)EEPROMs - Serial2 mA2MHz----40(Min) Year85C--2 MHz------------Yes2 MHzYesGull-wing100Yes1256x16bit-2.5 to 5.5 V-2 MHz-------------2 mA-M93S66-W------------------
M48Z58Y-70MH1F
2
M48Z58Y-70MH1F

NVRAM NVSRAM Parallel 64K-Bit 5V 28-Pin SOH T/R ZEROPOWER SRAM 8KX8 70NS SOH28 IC NVSRAM 64KBIT 70NS 28SOH NVRAM 64K (8Kx8) 70ns

stmicroelectronics

101: ¥111.3105Tape & ReelLead free / RoHS CompliantCompliantParallel64K (8K x 8)NVSRAM (Non-Volatile SRAM)4.55 V4.5 VTape and ReelSurface Mount28SOHSOHSOH280 to 70 °C330mil28-SOHNVSRAMNVRAM936SMD/SMTNo70ns64 Kb8Kx8SOH--18.49(Max)2.69(Max)-28---50 mACommercial-50--RAM50 mA70ns19365.5V---NORoHS-conform--M48Z58Y-70MH1F15 weeks70°C0°CParallel--------------------8 Bit--497-4730-1---------------------------50mA
M48T35AV-10PC1
8
M48T35AV-10PC1

NVRAM NVSRAM Parallel 256K-Bit 3.3V 28-Pin PCDIP Tube Real Time Clock Parallel 256Byte 28-Pin PCDIP Tube TK 32K X 83.3V IC TIMEKPR NVRAM 256KBIT 3V 28DI M48T35AV-10PC1, NVRAM Memory 256kbit Through Hole, 3 to 3.6V, 0 to +70°C, 28-Pin, PCDIP NVRAM 256K (32Kx8) 100ns NVRAM, TIMEKEEPER, 3V, 256K, CAPHAT M48Z35AV-10MH1E IC RTC CLK/CALENDAR PAR 28-DI , 256kbit NVRAM 存储器, 3 → 3.6 V, 0 → +70 °C, 28针 PCDIP封装

stmicroelectronics

4781: ¥219.572Rail / TubeLead free / RoHS CompliantCompliantParallel256kbit:NVRAM3 V3.3 V3.6 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34mm28-PCDIP, CAPHAT®NVSRAMNVRAM12Through HoleNo100ns256 Kb32Kx8CDIP0.006669:2839.88(Max)8.89(Max)Compliant28:No SVHC (20-Jun-2013)85423245:32K x 8bit30 mA-:--8.89mm39.88mm8 b30 mA-6012-39.98 x 18.34 x 8.89mm-70C---:3.3V----Parallel--------------Leap Year-:48---8 Bit-:Through Hole-256 BDW:DM:M:YHH:MM:SS-------------------------
M48Z35Y-70PC1
7
M48Z35Y-70PC1

NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin PCDIP Tube ZEROPOWER SRAM 32KX8 70NS DIP28 IC NVSRAM 256KBIT 70NS 18DIP M48Z35Y-70PC1, NVRAM Memory 256kbit Through Hole, 4.5 to 5.5V, 0 to +70°C, 28-Pin, PCDIP NVRAM 256K (32Kx8) 70ns NVRAM, 10 YR BATTERY 256K, 48Z35 Memory;256Kbit;4.5to5.5V;70;PCDIP28;0.8V(Max.);2.2V(Min.);0;70 NV-RAM 32 k x 8 Bit PCDIP-28, M48Z35Y-70PC1, ST , 256kbit NVRAM 存储器, 4.5 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装

stmicroelectronics

7291: ¥201.8764Rail / TubeLead free / RoHS CompliantCompliantParallel256K (32K x 8)NVSRAM (Non-Volatile SRAM)4.5 V5 V5.5 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34mm28-PCDIP, CAPHAT®NVSRAMNVRAM12Through HoleNo70ns256 Kb32Kx8-0.0062:2839.88(Max)8.89(Max)Compliant28:No SVHC (20-Jun-2013)85423245:32K x 8bit50 mACommercial:-508.89mm39.88mmRAM50 mA70ns120125.5V39.98 x 18.34 x 8.89mm10yrs.-NORoHS-conform-:5VM48Z35Y-70PC115 weeks70°C0°CParallel50mA±1μA0.4V10pF≤5ns≤5ns--------:Internal Battery-:48--10pF8 Bit:48Z35-----:10Yr:Commercial---1W-1-----------------
M48T18-150PC1
8
M48T18-150PC1

Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28-DI Memory; 64Kbit SRAM; 4.5 to 5.5 V; 150; PCDIP 28 pin; -0.3 V (Min.); 2.2 V (Min. Real Time Clock 64K (8Kx8) 150ns IC, SRAM TIMEKEEPER 64K Memory;64KbitSRAM;4.5to5.5V;150;PCDIP28pin;-0.3V(Min.);2.2V(Min. NV-RAM 8 k x 8 Bit PCDIP-28, M48T18-150PC1, ST 实时时钟 (RTC), 计时器 SRAM功能, 64kbit RAM, 4.5 → 5.5 V电源, 28针 PCDIP封装

stmicroelectronics

4161: ¥338.436Rail / TubeLead free / RoHS CompliantCompliantParallel:64Kbit:NVRAM4.55 V4.5 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34(Max)28-PCDIP, CAPHAT®Clock/CalendarReal Time Clock12Through HoleNo:150ns64K8K×8CDIP0.15:2839.88(Max)8.89(Max)Compliant28:No SVHC (20-Jun-2013)854110008 KB--:---------4.8to5.8V-10yrs.70C--:32768Hz:5V----Parallel80mA±1μA0.4V10pF≤5ns≤5ns--------Leap Year, Watchdog Timer----10pF--:Through Hole-8192 byteDW:DM:M:YHH:MM:SS--Clock/Calendar/NV Timekeeping RAM/Battery BackupYes-1W-------------------
M48T58Y-70PC1
6
M48T58Y-70PC1

Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28DIP M48T58Y-70PC1, Real Time Clock, Battery Backup, Calendar, Clock, 8192B RAM, Parallel, 5V, 28-Pin PCDIP Real Time Clock 64K (8Kx8) 70ns IC, NVRAM, 10 YR BATTERY 64K, 48T58 RTC,M48T58Y-70PC1 实时时钟 (RTC), 备用电池、日历、芯片取消选择、转移、写入保护功能, 8192B RAM, 并行总线, 4.5 → 5.5 V电源, 28针 PCDIP封装

stmicroelectronics

101: ¥224.5425Rail / TubeLead free / RoHS CompliantCompliantParallel:64Kbit:NVRAM4.5 V5 V5.5 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34mm28-PCDIP, CAPHAT®Clock/CalendarReal Time Clock12Through HoleNo:70ns--CDIP0.0062:28--Compliant-:No SVHC (20-Jun-2013)854232458 KB-Commercial:--8.89mm39.88mm------39.88 x 18.34 x 8.89mm-70C---:5V----Parallel--------------Leap Year-:48----:48T58--8192 byteDW:DM:M:YHH:MM:SS:10Yr:CommercialClock/Calendar/NV Timekeeping RAM/Battery BackupYes--------Battery Backup, Calendar, Chip Deselect, Clock, Switch Over, Write Protection------------
M48T35-70PC1
8
M48T35-70PC1

Real Time Clock Parallel 32KByte 28-Pin PCDIP Tube TIMEKEEPER SRAM 32KX8 DIP28 IC TIMEKPR NVRAM 256KBIT 5V 28DI M48T35-70PC1, Non Volatile RAM + RTC Through Hole, 4.75 to 5.5V, 0 to +70°C, 28-Pin, PCDIP Real Time Clock 256K (32Kx8) 70ns IC, SRAM TIMEKEEPER 256K MEMORYM48T35-70PC1 Memory; NV SRAM; 32kx8bit; 4.75÷5.5V; 70ns; DIP28 IC RTC CLK/CALENDAR PAR 28-DI , 32kbit NVRAM + RTC, 4.75 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装

stmicroelectronics

4941: ¥128.52Rail / TubeLead free / RoHS CompliantCompliantParallel:256Kbit:NVRAM4.75 V5 V5.5 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34mm28-PCDIP, CAPHAT®TIMEKEEPERReal Time Clock12Through Hole-70ns256Kbit32Kx8CDIP0.17:28----:No SVHC (20-Jun-2013)8541100032 KB-Commercial:--8.89mm39.88mm---60125.0V39.98 x 18.34 x 8.89mm--NORoHS-conform:32768Hz:5VM48T35-70PC127 weeks70°C0°CParallel----------48-132kx8bitLeap Year-------:Through Hole-32768 byteDW:DM:M:YHH:MM:SS--Clock/Calendar/NV Timekeeping RAM/Watchdog Timer/Battery BackupYes---1-----------------
M48T18-100PC1
7
M48T18-100PC1

Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28-DI M48T18-100PC1, Real Time Clock, Battery Backup, Calendar, Clock, 8192B RAM, Parallel, 5V, 28-Pin PCDIP Real Time Clock 64K (8Kx8) 100ns SRAM TIMEKEEPER 64K, 48T18, DIP28 Memory; NV SRAM; 8kx8bit; 100ns; DIP28 实时时钟 (RTC), 备用电池、日历、芯片取消选择、转移、写入保护功能, 8192B RAM, 并行总线, 4.5 → 5.5 V电源, 28针 PCDIP封装 TIMEKEEPER SRAM 8KX8 DIP28

stmicroelectronics

101: ¥215.4915Rail / TubeLead free / RoHS CompliantCompliantParallel:64Kbit:NVRAM4.5 V5 V5.5 VTubeThrough Hole28PCDIPPCDIPPCDIP280 to 70 °C18.34mm28-PCDIP, CAPHAT®Clock/CalendarReal Time Clock12Through Hole-:100ns--CDIP0.000001:2839.88(Max)8.89(Max)-28:No SVHC (20-Jun-2013)854232458 KB--:--8.89mm39.88mm------39.88 x 18.34 x 8.89mm-----:5V----Parallel----------3-18kx8bitLeap Year, Watchdog Timer-:48----:48T18--8192 byteDW:DM:M:YHH:MM:SS:10Yr:CommercialClock/Calendar/NV Timekeeping RAM/Battery BackupYes-------:M48T18-100PC1Battery Backup, Calendar, Chip Deselect, Clock, Switch Over, Write Protection------------
M93S56-WMN6P
2
M93S56-WMN6P

EEPROM Serial-Microwire 2K-bit 128 x 16 3.3V/5V 8-Pin SO N Tray IC EEPROM 2KBIT 2MHZ 8SO EEPROM 2.5 V to 5.5V 16K MEMORY;2KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.)

stmicroelectronics

120002000: ¥2.0434Rail / TubeLead free / RoHS CompliantCompliantSerial-Microwire2K (128 x 16)EEPROM3.3|5 V2.5 V ~ 5.5 V2.5 VTraySurface Mount8SO NSOIC NSO N8-40 to 85 °C4(Max)8-SO-EEPROM100SMD/SMTNo-2 Kb128x16SOIC--5(Max)1.65(Max)Compliant8---2 mAIndustrial-2 mA1.65 mm (Max)5 mm (Max)EEPROMs - Serial2 mA2MHz----40(Min) Year85C--2 MHz------------Yes2 MHzYesGull-wing-Yes---2.5 to 5.5 V-2 MHz-------------2 mA-M93S56-W------------------
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