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STMicroelectronics N.V.

STMicroelectronics N.V.- High Voltage Ceramic Capacitors

STMicroelectronics N.V., commonly known as ST, was formed in 1987 through the merger of Italian SGS Microelettronica and French Thomson Semiconducteurs. Headquartered in Geneva, Switzerland, it is one of the largest semiconductor companies globally. The company went public in 1994 and is listed on the New York Stock Exchange (NYSE: STM), Euronext Paris, and Borsa Italiana in Milan. STMicroelectronics serves customers across a broad spectrum of electronics applications with innovative semiconductor solutions. Its core business areas include automotive, industrial, personal electronics, and communications infrastructure. The company boasts an extensive product portfolio featuring microcontrollers (MCU), specifically the STM32 family which is widely adopted for embedded applications. In analog and mixed-signal ICs, ST offers operational amplifiers, comparators, and data converters, while its power management products include a wide range of voltage regulators and motor drivers. ST is a leader in power discrete and modules, such as MOSFETs, IGBTs, and silicon carbide (SiC) devices, crucial for high-efficiency power conversion. The sensor product line covers MEMS sensors like accelerometers, gyroscopes, and environmental sensors, as well as time-of-flight ranging sensors. ST is recognized as a top-tier semiconductor company, consistently ranking among the top 10 globally by revenue, and holds leading market positions in automotive ICs, MEMS sensors, and general-purpose MCUs, leveraging its advanced manufacturing and R&D strengths.

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High Voltage Ceramic Capacitors - 型号列表

4 parts in total

Other Names

Package / Case

Supplier Device Package

Standard Package

Standard Package Name

Power - Max

Power Dissipation (Max)

Width

Lead Style

Mounting Type

Length - Overall

Package Quantity

Number of Positions

Shell Size - Insert

Printed Circuit Board

Operating Temperature

Voltage - Supply

Type

Mfr Part #Quantity AvailablePriceStandard PackagePackagingPackage / CaseSupplier Device PackageOperating TemperatureOther NamesStandard Package NameRoHSEU RoHSWidthLead StyleMounting TypeLength - OverallPackage QuantityNumber of PositionsShell Size - InsertPrinted Circuit BoardPower - MaxNumber of ElementsPower Dissipation (Max)Tab WidthVoltage - SupplyTypeFET TypeVgs (Max)FET FeatureVgs(th) (Max) @ IdVoltage - BreakdownRds On (Max) @ Id, VgsOn-State Resistance (Max)Gate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Current - Peak Pulse (10/1000us)Input Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25degCChannel TypeTransistor TypeVoltage - Input (Min)Voltage - Supply (Max)Vce(on) (Max) @ Vge, IcVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Current - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceCurrent - OutputSpeedInterfaceMemory SizeMemory TypeMemory Format
STP16NS25
STP16NS25

MOSFET N-Ch 250 Volt 16 Amp Trans MOSFET N-CH 250V 16A 3-Pin(3+Tab) TO-220 Tube MOSFET N-CH 250V 16A TO-220 STP16NS25

STMicroelectronics

5481: ¥11.62850TubeTO-220-3TO-220AB150497-3183-5TO-220Lead free / RoHS CompliantCompliant4.6(Max)Through HoleThrough Hole10.4(Max)TO-22039.15(Max)3140W1140000Tab--MOSFET N-Channel, Metal Oxide±20Logic Level Gate4V @ 250µA250280 mOhm @ 8A, 10V280@10V83nC @ 10V250V161270pF @ 25V16A (Tc)N--------------
TIP30C
TIP30C

Transistors Bipolar - BJT PNP Gen Pur Power Trans GP BJT PNP 100V 1A 3-Pin(3+Tab) TO-220 Tube TRANSISTOR PNP 100V 1A TO-220 TIP30C

STMicroelectronics

-50TubeTO-220-3TO-220AB150497-2588-5TO-220Lead free / RoHS CompliantCompliant4.6(Max)Through HoleThrough Hole10.4(Max)TO-22039.15(Max)32W12000Tab100VPNP-------------PNP1005100700mV @ 125mA, 1A1A300µA40@0.2A@4V|15@1A@4V------
TDA0161FP
TDA0161FP

Interface - Specialized Proximity Detector Proximity Detector 8-Pin SO N Tube IC PROXIMITY DETECTOR 8 SOIC SENSOR,TDA0161FP

STMicroelectronics

7410: ¥14.934100Tube8-SOIC (0.154", 3.90mm Width)8-SO150497-2159-5SOICLead free / RoHS CompliantCompliant4(Max)Gull-wingSurface Mount5(Max)SO N81.65(Max)8-----Proximity Detector---------------------12mA-----
M93C46-WBN6
M93C46-WBN6

EEPROM 1K (64x8 or 32x16) IC EEPROM 1KBIT 2MHZ 8DIP M93C46-WBN6

STMicroelectronics

5010: ¥2.006450Tube8-DIP (0.300", 7.62mm)8-PDIP-40°C ~ 85°C----------------2.5 V ~ 5.5 V-----------------------2MHzMicrowire, 3-Wire Serial1K (128 x 8 or 64 x 16)EEPROMEEPROMs - Serial
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