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Taiwan Semiconductor Co., Ltd.

Taiwan Semiconductor Co., Ltd.- Discrete Semiconductors

Taiwan Semiconductor Co., Ltd. (TSC) is a globally recognized power semiconductor manufacturer founded in 1979 with headquarters in Taiwan. With over 30 years of manufacturing experience, the company has established itself as a leading supplier of discrete power devices and analog ICs. TSC offers an extensive product portfolio covering power management ICs, rectifiers (Schottky, fast recovery, standard), transient voltage suppressor (TVS) diodes, ESD protection arrays, bridge rectifiers, MOSFETs (low- to high-voltage), IGBTs, thyristors (SCRs and TRIACs), and trigger diodes. The company provides one-stop total solutions for applications in automotive electronics, power management systems, LED lighting, industrial equipment, portable devices, communications, and consumer electronics. TSC operates one epitaxial wafer fab, three wafer fabs, and two assembly and test facilities, all certified to TS 16949, ISO 9001, and ISO 14001 standards. Its technology strengths include advanced trench MOSFET design, low-VF Schottky processes, and high-reliability ESD protection solutions, backed by numerous global patents. The company serves as a preferred partner for major automotive electronic system makers, consumer electronics giants, and EMS providers worldwide. With a global workforce of over 2,300 employees and sales offices across Asia, Europe, and the Americas, TSC generates annual revenue exceeding NT$5 billion. Committed to sustainability, TSC integrates green manufacturing and energy-saving solutions into its operations, aligning with RoHS and REACH requirements. Over the years, the company has dedicated itself to corporate social responsibility, actively supporting community projects and environmental protection, ensuring long-term value for customers, employees, and society.

03

Discrete Semiconductors - 型号列表

38 parts in total

Delay to 1st Tap

On-State Resistance (Max)

Power Dissipation (Max)

Gate Charge (Qg) (Max) @ Vgs

Current - Peak Pulse (10/1000us)

Input Capacitance (Ciss) (Max) @ Vds

Vgs (Max)

Voltage - Threshold

Switch Time (Ton, Toff) (Max)

Resistance - RDS(On)

Current - Continuous Drain (Id) @ 25degC

Package / Case

Voltage - Breakdown

Transistor Type

Drain to Source Voltage (Vdss)

Operating Temperature

Package Quantity

Channel Type

Part # Aliases

Factory Pack Quantity

RoHS

Tariff No

Fall Time

Rise Time (Typ)

Vgs(th) (Max) @ Id

Current Rating (Max)

Contact Voltage (Max)

Rds On (Max) @ Id, Vgs

Weight

Packaging

Mounting Type

Mounting Style

Number of Pins

Material Finish

Spg

Configuration

Height

Package Cooled

Length - Overall

Size / Dimension

Number of Positions

Shell Size - Insert

Card Standard

Mfr Part #Quantity AvailablePriceOperating TemperatureVgs (Max)Power Dissipation (Max)RoHSPackagingDelay to 1st TapOn-State Resistance (Max)Mounting TypeConfigurationPackage / CaseNumber of ElementsVoltage - BreakdownGate Charge (Qg) (Max) @ VgsSwitch Time (Ton, Toff) (Max)Current - Peak Pulse (10/1000us)Input Capacitance (Ciss) (Max) @ VdsWidthHeightLengthPackage CooledSize / DimensionNumber of PositionsChannel TypeCard StandardSVHCTariff NoTransistor TypeVoltage - ThresholdResistance - RDS(On)Drain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25degCWeightNumber of PinsMaterial FinishFactory Pack QuantityPackage QuantityPart # AliasesMounting StyleManufacturerStandard Package NameEU RoHSLead StyleLength - OverallShell Size - InsertPrinted Circuit BoardProduct CategoryFall TimePower - RatedRise Time (Typ)Vgs(th) (Max) @ IdCurrent Rating (Max)Contact Voltage (Max)Rds On (Max) @ Id, VgsVce(on) (Max) @ Vge, IcCurrent - Peak Pulse (8/20us)Voltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)TerminationSpgPolarityNumber of UnitsCurrent - BreakoverVoltage - BreakoverSchematic
TSM2301CX
4
TSM2301CX

MOSFET 20V P channel MOSFET MOSFET, P, 20V, SOT-23 Transistor: P-MOSFET; unipolar; 20V; 1.25W; SOT23

Taiwan Semiconductor

26281: ¥2.38- 55 C:-4.5V:1.25WRoHS CompliantReel95 ns:122mohmSMDSingleSOT-23-3--------------:No SVHC (20-Jun-2013)85412100P-Channel:-450mV:65mohm:20V:2.3A0.000008:3:-30003000RFSMD/SMT-------MOSFET19 ns900 mW19 ns:-0.45V:-2.3A:-20V130 mOhms at 4.5 V20 V:10A+/- 8 V2.8 A:SMD3000unipolar1---
TSM2302CX
4
TSM2302CX

MOSFET 20V N channel MOSFET MOSFET, N, 20V, SOT-23 Transistor: N-MOSFET; unipolar; 20V; 2.4A; 1.25W; SOT23

Taiwan Semiconductor

105: ¥0.9384- 55 C:4.5V:250mWRoHS CompliantReel16.61 ns95mΩSMDSingleSOT-23-3--------------:No SVHC (20-Jun-2013)85412900N-Channel:450mV:65mohm:20V:2.4A0.000008:3:-30001000RFSMD/SMT-------MOSFET7.56 ns900 mW7.56 ns:0.45V:2.4A:20V65 mOhms at 4.5 V20 V:10A+/- 8 V2.8 A:SMD1000unipolar1--see
LLDB3
LLDB3

Diacs 150mW Bi-directional Trigger Diode

Taiwan Semiconductor

48321: ¥1.972- 40 C--RoHS CompliantReel----Mini MELF------------------------2500--SMD/SMTTaiwan Semiconductor----------------------100 uA32 V-
TSM1N45CT
3
TSM1N45CT

MOSFET 450V N Channel Pwr MOSFET MOSFET,N CH,450V,4A,TO92

Taiwan Semiconductor

101: ¥0.918:-55°C:10V:2WRoHS CompliantReel----:TO-92--------------:No SVHC (20-Jun-2013)85412900:N Channel:3V:3.7ohm:450V:500mA0.00025:3:MSL 1 - Unlimited--A3---------------------------
TSM3460CX6
2
TSM3460CX6

MOSFET 30V N channel MOSFET MOSFET,WITH ESD,N CH,20V,6A,SOT26

Taiwan Semiconductor

101: ¥0.5236:-55°C:4.5V:1.3WRoHS CompliantReel----:SOT-26--------------:No SVHC (20-Jun-2013)85412900:N Channel:800mV:0.022ohm:20V:6A0.000008:6:-3000-----------------------------
TSM1N50CT
2
TSM1N50CT

MOSFET 500V N Channel Pwr MOSFET MOSFET,N CH,500V,0.5A,TO92

Taiwan Semiconductor

101: ¥1.2852:-55°C:10V:625mWRoHS CompliantReel----:TO-92--------------:No SVHC (20-Jun-2013)85412900:N Channel:2V:4.6ohm:500V:500mA0.00025:3:MSL 1 - Unlimited--A3---------------------------
LLDB3TG
LLDB3TG

Diacs 150mW Bi-directional Trigger Diode

Taiwan Semiconductor

102500: ¥0.4148---RoHS CompliantReel-----------------------------------------------------------
TSM3457CX6
3
TSM3457CX6

MOSFET 30V P channel MOSFET MOSFET,P CH,30V,5A,SOT26

Taiwan Semiconductor

101: ¥0.5032:-55°C:-10V:2WRoHS CompliantReel----:SOT-26--------------:No SVHC (20-Jun-2013)85412900:P Channel:-1.5V:0.05ohm:-30V:-5A0.000008:6:-3000-----------------------------
TSM3446CX6
3
TSM3446CX6

MOSFET 20V N channel MOSFET MOSFET,N CH,20V,5.3A,SOT26

Taiwan Semiconductor

101: ¥0.6392:-55°C:4.5V:2WRoHS CompliantReel----:SOT-26--------------:No SVHC (20-Jun-2013)85412900:N Channel:700mV:0.027ohm:20V:5.3A0.000008:6:-3000-----------------------------
TSM2311CX RF
TSM2311CX RF

Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R MOSFET P-Channel 20V 4A SOT23

Taiwan Semiconductor

3253010: ¥1.802+150 °C±8 V0.9 WCompliantTape and Reel70 ns85 mΩSurface MountSingle-1-20 V9 nC V @ -4.535 ns-4 A640 pF V @ -61.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3PSwitching-----------SOT-23---SOT-23CompliantGull-wing3(Max)1.1(Max)3-------------------
TSM2314CX RF
TSM2314CX RF

Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R MOSFET N-Channel 20V 4.9A SOT23

Taiwan Semiconductor

3521110: ¥1.666+150 °C±12 V1.25 WCompliantTape and Reel13.5 ns100 mΩSurface MountSingle-120 V14 nC V @ 4.50.53 ns4.9 A900 pF V @ 101.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3NSwitching-----------SOT-23---SOT-23CompliantGull-wing3.1(Max)1.2(Max)3-------------------
TSM2313CX RF
TSM2313CX RF

Trans MOSFET P-CH 20V 3.3A 3-Pin SOT-23 T/R MOSFET P-Channel 20V 3.3A SOT23

Taiwan Semiconductor

3324410: ¥1.768+150 °C±12 V2 WCompliantTape and Reel70 ns130 mΩSurface MountSingle-1-20 V6 nC V @ -4.535 ns-3.3 A640 pF V @ -101.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3PSwitching-----------SOT-23---SOT-23CompliantGull-wing3.1(Max)1.2(Max)3-------------------
TSM2307CX RF
TSM2307CX RF

MOSFET P-Channel 30V 3A SOT23

Taiwan Semiconductor

3652325: ¥1.6048+150 °C±20 V1.25 W--50 ns140 mΩSurface MountSingle-1-30 V10 nC V @ -1020 ns-3 A565 pF V @ -151.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3EnhancementSwitching----------------------------------------
TSM2306CX RF
TSM2306CX RF

MOSFET N-Channel 30V 3.5A SOT23

Taiwan Semiconductor

3742525: ¥1.5708+150 °C±20 V1.25 W--13 ns94 mΩSurface MountSingle-130 V4.2 nC V @ 104.2 ns3.5 A555 pF V @ 151.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3EnhancementSwitching----------------------------------------
TSM3481CX6 RF
TSM3481CX6 RF

MOSFET P-Channel 30V 5.3A SOT26

Taiwan Semiconductor

2470310: ¥2.3732+150 °C±20 V2 W--42.81 ns79 mΩSurface MountQuad Drain, Single-1-30 V18.09 nC V @ -1020.52 ns-5.3 A1047.98 pF V @ -151.7mm1.1mm3.1mmSOT-263.1 x 1.7 x 1.1mm6EnhancementPower MOSFET----------------------------------------
TSM2318CX RF
TSM2318CX RF

MOSFET N-Channel 40V 3.9A SOT23

Taiwan Semiconductor

2543210: ¥2.3052+150 °C±20 V1.25 W--20 ns62.5 mΩSurface MountSingle-140 V10 nC V @ 105 ns3.9 A540 pF V @ 201.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3EnhancementSwitching----------------------------------------
TSM2310CX RF
TSM2310CX RF

MOSFET N-Channel 20V 4A SOT23

Taiwan Semiconductor

3521110: ¥1.666+150 °C±12 V1.25 W--40 ns100 mΩSurface MountSingle-120 V8.6 nC V @ 1015 ns4 A550 pF V @ 101.7mm1.2mm3.1mmSOT-233.1 x 1.7 x 1.2mm3EnhancementSwitching----------------------------------------
TS19373CX5 RF
TS19373CX5 RF

TS19373CX5 RF

TAIWAN SEMICONDUCTOR

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DB3 RI
DB3 RI

Diacs Diac

Taiwan Semiconductor

-- 40 C--RoHS CompliantReel----DO-35---------------------------Through HoleTaiwan Semiconductor----------------------100 uA32 V-
DB3 RIG
DB3 RIG

Diacs Diac

Taiwan Semiconductor

----RoHS CompliantReel---------------------------------Taiwan Semiconductor-------------------------
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