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Toshiba Corporation

Toshiba Corporation- AF Bipolar Transistors

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality and reliability makes it a trusted partner for global electronics manufacturers.

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AF Bipolar Transistors - 型号列表

111 parts in total

Series

Vce Saturation (Max) @ Ib, Ic

DC Current Gain (hFE) (Min) @ Ic, Vce

Transistor Type

Package / Case

Resistor - Base (R1)

Voltage - Supply

Current - Collector Cutoff (Max)

Supplier Device Package

Other Names

Power - Max

Current - Collector (Ic) (Max)

Standard Package

Frequency - Transition

Power - Average Forward

Packaging

Operating Temperature

Factory Pack Quantity

Resistor Matching Ratio

RoHS

Frequency - Max

Voltage - Input (Min)

Gain Bandwidth Product

Power Dissipation (Max)

Vce(on) (Max) @ Vge, Ic

Number of Positions

Type

Configuration

Product Category

Mfr Part #Quantity AvailablePriceRoHSTransistor TypeVoltage - SupplyVce Saturation (Max) @ Ib, IcDC Current Gain (hFE) (Min) @ Ic, VcePackagingPackage / CaseCurrent - Collector Cutoff (Max)Mounting StyleFactory Pack QuantityPower - Average ForwardSeriesManufacturerResistor - Base (R1)Resistor Matching RatioStandard PackagePower - MaxCurrent - Collector (Ic) (Max)Mounting TypeSupplier Device PackageOther NamesFrequency - TransitionConfigurationOperating TemperatureFrequency - MaxVoltage - Input (Min)Gain Bandwidth ProductPower Dissipation (Max)Vce(on) (Max) @ Vge, IcNumber of PositionsTypeProduct CategoryStandard Package NameEU RoHSNumber of ElementsVoltage - Supply (Max)Lead StylePackage QuantityNumber of ChannelsVce Saturation (Max)Power - RatedCurrent - Collector Pulsed (Icm)HeightLength
HN1C03F-B(TE85L,F)
HN1C03F-B(TE85L,F)

Trans GP BJT NPN 20V 0.3A 6-Pin SM T/R TRAN DUAL NPN 20V 0.3A SM6 Transistors Bipolar - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6

toshiba

24901: ¥2.788Lead free / RoHS Compliant2 NPN (Dual)20V100mV @ 3mA, 30mA350@4mA@2VTape & Reel (TR)6SM0.3 ASMD/SMT-300 mWHN1C03Toshiba--3,000300mW300mASurface MountSM6HN1C03F-B(TE85LF)TR30MHzDual-55 to 150 °C30(Typ) MHz20 V30 MHz300 mW50 V6NPN--------42 mV----
TD62064AFG(O.S>
TD62064AFG(O.S>

Trans Darlington NPN 50V 1.5A 18-Pin(16+2Tab) HSOP T/R

toshiba

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ULN2003AFWGON>>
ULN2003AFWGON>>

Trans Darlington NPN 50V 0.5A 16-Pin SOL T/R

toshiba

---------------------------------------------
TD62084AFG(O.N>
TD62084AFG(O.N>

Trans Darlington NPN 50V 0.5A 18-Pin SOP T/R

toshiba

---------------------------------------------
ULN2804AFWG(O.>
ULN2804AFWG(O.>

Trans Darlington NPN 50V 0.5A 18-Pin SOL T/R

toshiba

---------------------------------------------
ULN2003AFWGONE>
ULN2003AFWGONE>

Trans Darlington NPN 50V 0.5A 16-Pin SOL

toshiba

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2SA1832-GR(T5L,F,T
2SA1832-GR(T5L,F,T

Transistors Bipolar - BJT -150mA -0.3V Trans GP BJT PNP 50V 0.15A 3-Pin SSM T/R TRANSISTOR PNP SSM

Toshiba

55201: ¥1.428Lead free / RoHS CompliantPNP50V300mV @ 10mA, 100mA200@2mA@6VTape and ReelSC-75, SOT-416100nA (ICBO)SMD/SMT10000-----3,000100mW150mASurface MountSSM2SA1832-GR(T5LFT)CT80MHzSingle+ 125 C80(Min)5080 MHz (Min)100 mW- 50 V3PNPTransistors Bipolar - BJTSSMCompliant15Gull-wingSSM------
2SA1832-Y(T5L,F,T)
2SA1832-Y(T5L,F,T)

Transistors Bipolar - BJT -150mA -0.3V Trans GP BJT PNP 50V 0.15A 3-Pin SSM T/R TRANSISTOR PNP SSM

Toshiba

51891: ¥1.428Lead free / RoHS CompliantPNP50V300mV @ 10mA, 100mA120@2mA@6VTape and ReelSC-75, SOT-416100nA (ICBO)SMD/SMT10000-----3,000100mW150mASurface MountSSM2SA1832-Y(T5LFT)CT80MHzSingle+ 125 C80(Min)5080 MHz (Min)100 mW- 50 V3PNPTransistors Bipolar - BJTSSMCompliant15Gull-wingSSM------
RN1310(TE85L,F)
RN1310(TE85L,F)

Transistors Switching - Resistor Biased 100mA 50volts 3Pin 4.7Kohms TRANSISTOR NPN USM Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms

Toshiba

2914370: ¥0.4114Lead free / RoHS CompliantNPN - Pre-Biased50V300mV @ 250µA, 5mA120 @ 1mA, 5VTape & Reel (TR)SC-70, SOT-323100nA (ICBO)SMD/SMT3000100 mWRN1310Toshiba4.7k-3,000100mW100mASurface MountUSMRN1310(TE85LF)CT250MHzSingle+ 150 C-------Transistors Switching - Resistor Biased--------100 mW100 mA0.9 mm2 mm
ULN2003AFWG,O,N,E
ULN2003AFWG,O,N,E

TRANS 7 NPN DARL 50V 500MA 16SOL

Toshiba Semiconductor and Storage

140002000: ¥1.4756Lead free / RoHS Compliant7 NPN Darlington50V1.6V @ 500µA, 350mA1000 @ 350mA, 2VTape & Reel (TR)16-SOIC (0.154", 3.90mm Width)--------2,0001.25W500mASurface Mount16-SOL------------------------
ULN2803AFWG,C,EL
ULN2803AFWG,C,EL

TRANS 8 NPN DARL 50V 500MA 18SOL

Toshiba Semiconductor and Storage

240001000: ¥1.632Lead free / RoHS Compliant8 NPN Darlington50V1.6V @ 500µA, 350mA1000 @ 350mA, 2VTape & Reel (TR)18-SOIC (0.295", 7.50mm Width)--------1,0001.31W500mASurface Mount18-SOL------------------------
RN4904,LF(CT
RN4904,LF(CT

TRANS NPN/PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

1001: ¥1.1138RoHS CompliantNPN, PNP- 50 V, 50 V- 10 V, 10 V80ReelSOT-363-6- 100 mA, 100 mASMD/SMT3000200 mWRN4904Toshiba47 kOhms1-----------------------2 Channel-----
RN2911,LF(CT
RN2911,LF(CT

TRANS 2PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

60001: ¥1.3246RoHS CompliantPNP- 50 V- 5 V120ReelSOT-363-6- 100 mASMD/SMT3000200 mWRN2911Toshiba10 kOhms------------------------------
RN4906,LF(CT
RN4906,LF(CT

TRANS NPN/PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

58601: ¥1.3246RoHS CompliantNPN, PNP- 50 V, 50 V- 5 V, 5 V80ReelSOT-363-6- 100 mA, 100 mASMD/SMT3000200 mWRN4906Toshiba4.7 kOhms0.1-----------------------2 Channel-----
RN1910FE,LF(CT
RN1910FE,LF(CT

TRANS 2NPN PREBIAS 0.1W ES6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

1001: ¥1.0415RoHS CompliantNPN50 V5 V120ReelSOT-563100 mASMD/SMT4000100 mWRN1910Toshiba4.7 kOhms------------------------------
RN2902FE,LF(CT
RN2902FE,LF(CT

TRANS 2PNP PREBIAS 0.2W ES6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

68621: ¥2.04RoHS CompliantPNP- 50 V- 10 V50ReelSOT-563- 100 mASMD/SMT4000100 mWRN2902Toshiba10 kOhms1-----------------------------
RN1905,LF(CT
RN1905,LF(CT

TRANS 2NPN PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

901: ¥1.0535RoHS CompliantNPN50 V5 V80ReelSOT-363-6100 mASMD/SMT3000200 mWRN1905Toshiba2.2 kOhms0.0468-----------------------------
RN2902,LF(CT
RN2902,LF(CT

TRANS 2PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

881: ¥0.9604RoHS CompliantPNP- 50 V- 10 V50ReelSOT-363-6- 100 mASMD/SMT3000200 mWRN2902Toshiba10 kOhms1-----------------------------
RN2903,LF(CT
RN2903,LF(CT

TRANS 2PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

59901: ¥1.972RoHS CompliantPNP- 50 V- 10 V70ReelSOT-363-6- 100 mASMD/SMT3000200 mWRN2903Toshiba22 kOhms1-----------------------------
RN2904,LF(CT
RN2904,LF(CT

TRANS 2PNP PREBIAS 0.2W US6 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Toshiba Semiconductor and Storage

57041: ¥2.108RoHS CompliantPNP- 50 V- 10 V80ReelSOT-363-6- 100 mASMD/SMT3000200 mWRN2904Toshiba47 kOhms1-----------------------------
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