Vishay Intertechnology, Inc.- Logic ICs

Vishay Intertechnology, Inc. was founded in 1962 by Dr. Felix Zandman, with headquarters in Malvern, Pennsylvania, USA. The company is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Its core business encompasses the design, manufacture, and supply of a vast array of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. In the discrete semiconductor segment, key product lines include TrenchFET® MOSFETs, Schottky diodes, and infrared (IR) emitter/detector components for sensing and remote control. For passive components, Vishay offers industry-leading series such as IHLP® power inductors for high-current applications, Power Metal Strip® resistors for precise current sensing, and Tantalum/MLCC capacitors under the Tantamount® brand. The company serves diverse end markets including industrial, power supply, automotive, computing, consumer, telecommunications, military, aerospace, and medical electronics. Vishay holds a leading market position globally in power discretes and passives, known for its technological innovation and extensive product portfolio. Its “one-stop shop” service model and successful acquisition strategy have enabled it to deliver complete component solutions. With manufacturing facilities across the Americas, Europe, and Asia, Vishay maintains a broad global footprint and is a major partner to distributors like Digi-Key, underscoring its supply chain strength.

Logic ICs - 型号列表

214 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	Package / Case	On-State Resistance (Max)	RoHS	Packaging	Type	Operating Temperature	MOQ	Unit Pack	FET Type	FET Feature	Power - Max	Power - Rated	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25degC	Mounting Type	Length - Overall	Supplier Device Package	EU RoHS	Vgs (Max)	Number of Elements	Voltage - Breakdown	Power Dissipation (Max)	Current - Peak Pulse (10/1000us)	Package Quantity	Number of Positions	Channel Type	Lead Style	Configuration	Width	Vce(on) (Max) @ Vge, Ic	Current - Drain (Idss) @ Vds (Vgs=0)	Shell Size - Insert	Printed Circuit Board	Standard Package Name	Input Capacitance (Ciss) (Max) @ Vds	Other Names	Transistor Type	Delay to 1st Tap	Voltage - Supply	Propagation Delay (Max)	Gate Charge (Qg) (Max) @ Vgs	Switch Time (Ton, Toff) (Max)	Package Cooled	Fall Time (Typ)	Delay Time - OFF	Weight	Size / Dimension	Rad Hardened	Polarity	Product Category	Factory Pack Quantity	Tariff No	Voltage - Threshold	Resistance - RDS(On)	Height	Length	Voltage - Gate Trigger (Vgt) (Max)	Mounting Style	Number of Pins	Material Finish	Input Signal	Turn On Time	Switch Function/Rating	Current Rating (Max)	Termination	DELETED	Card Standard	Technology	Fall Time	Noise Figure	Power - Output	Delay Time - ON	Frequency - Max	Rise Time (Typ)	Current Drain (Id) - Max	Current Transfer Ratio (Max)	Vce Saturation (Max) @ Ib, Ic	Polarization	Tolerance	Resistance	Power (Watts)	Resistance (Ohms)	Diameter	Mounting Feature	Coating, Housing Type	Composition	Temperature Coefficient	Contact Voltage (Max)	Common Mode Transient Immunity (Min)	Tradename	Part # Aliases	Thermal Resistance @ Natural	Manufacturer	Automotive	Leadfree Defin	Logic Type	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Matchcode	Standard Leadtime	Thermal Resistance @ GPM	Current - Peak Pulse (8/20us)	Tab Width	Spg	SMD Marking	Number of Units	Temperature - Test	Thermal Resistance	Diode Configuration	Module/Board Type	Series	Depth	Tape Width - Max	Operating Temperature - Junction
2N6661JTXV02 Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD MOSFET N-CH 90V 860MA TO-205 vishay / siliconix	10	1: ¥3,255.976	Bulk	3TO-205AD	4000@10V	Contains lead / RoHS non-compliant	Tube	Power MOSFET	-55 to 150 °C	20	20	MOSFET N-Channel, Metal Oxide	Logic Level Gate	725mW	0.725 W	2V @ 1mA	4000@10V mOhm	90V	860mA (Tc)	Through Hole	9.4(Max)	TO-39	Not Compliant	±20 V	1	90 V	725	0.86 A	TO-205AD	3	Enhancement	-	-	8.15(Max)	90 V	0.86 A	6.6(Max)	3	-	50pF @ 25V	-	-	-	-	-	-	-	TO-205AD	-	-	-	-	No	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SI4947ADY-T1-E3 Trans MOSFET P-CH 30V 3.9A 8-Pin SOIC N T/R MOSFET P-CH DUAL 30V 3.0A 8-SOIC SI4947ADY-T1-E3, Dual P-channel MOSFET Transistor 3.9A 30V, 8-Pin SOIC MOSFET 30V 3.9A 2W MOSFET, DUAL P, SO-8 MOSFET;SO8Dual30VP-CH,4.5VRated vishay / siliconix	10	2500: ¥2.2372	Tape & Reel	8SOIC N	0.08 Ω	Lead free / RoHS Compliant	Tape and Reel	Power MOSFET	-55 to 150 °C	-	-	2 P-Channel (Dual)	Logic Level Gate	1.2W	2 W	1V @ 250µA	80@10V mOhm	30V	3A	Surface Mount	5(Max)	8-SOIC N	Compliant	±20 V	2	30 V	2 W	3.9 A	SOIC N	8	P	Gull-wing	Dual, Dual Drain	4mm	30 V	3 A	1.55(Max)	8	SOIC	-	SI4947ADY-T1-E3CT	P-Channel	21 ns	-1.2V	9 ns	8nC @ 5V	8 ns	SOIC N	10 ns	21ns	0.000001	5 x 4 x 1.55mm	No	P	MOSFET	2500	85322300	:-1V	:62mohm	1.55mm	5mm	+/- 20 V	SMD/SMT	:8	:MSL 1 - Unlimited	-	-	-	:-3A	:SMD	Compliant	Power MOSFET	-	10 ns	Not Required dB	Not Required dB	8ns	Not Required MHz	9 ns	3.9 A	5S	Not Required %	P-Channel	-	-	-	-	-	-	-	-	-	-	-	TrenchFET	SI4947ADY-E3	87°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:SOIC	:Dual	-	-	-	-
6 SI3552DV-T1-E3 Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET N/P-CH 30V 2.5/1.8A 6TSOP MOSFET;Dual; Complementary; 30V; 2.5/1.8A; TSOP-6 MOSFET 30V 2.5/1.8A MOSFET,Dual,Complementary,30V,2.5/1.8A,TSOP-6 vishay / siliconix	2941	1: ¥4.352	Tape & Reel	6TSOP	0.105/0.2Ohms	Lead free / RoHS Compliant	Tape and Reel	Complementary	-55 to 150 °C	3000	3000	N and P-Channel	Logic Level Gate	1.15W	1.15 W	1V @ 250µA	105@10V@N Channel\|200@10V@P Channel mOhm	30V	2.5A, 1.8A	Surface Mount	3.05	6-TSOP	Compliant	±20 V	2	30 V	1.15W	2.5@N Channel\|1.8@P Channel A	TSOP	6	N\|P	Gull-wing	Dual	1.65 mm	+/- 30 V	2.5 A, 1.8 A	1(Max)	6	TSOP	-	SI3552DV-T1-E3CT	N and P-Channel	13@N Channel\|12@P Channel ns	0.81/-0.83V	9@N Channel\|12@P Channel ns	3.2nC @ 5V	7@N Channel\|8@P Channel ns	-	5@N Channel\|7@P Channel ns	13/12ns	-	-	-	-	MOSFET	3000	-	-	-	1.1 mm	3.05 mm	+/- 20 V	SMD/SMT	-	-	-	-	-	-	-	-	-	Si	-	-	-	7/8ns	-	-	-	4.3/2.4S	-	N-ChannelandP-Channel	-	-	-	-	-	-	-	-	-	-	-	TrenchFET	SI3552DV-E3	130°C/W	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TrenchFET®	-	-	-
2 SI4816DY-T1-E3 Trans MOSFET N-CH 30V 5.3A/7.7A 8-Pin SOIC N T/R MOSFET N-CH DUAL 30V 8-SOIC DUAL N CH/SCHOTTKY MOSFET, 30V SOIC vishay / siliconix	10	1: ¥12.308	Tape & Reel	8SOIC N	22@10V@Channel 1\|13@10V@Channel 2	Lead free / RoHS Compliant	Tape and Reel	Power MOSFET	-55 to 150 °C	1	0	2 N-Channel (Dual)	Logic Level Gate	1W, 1.25W	7.7 W	2V @ 250µA	22@10V@Channel 1\|13@10V@Channel 2 mOhm	30V	5.3A, 7.7A	Surface Mount	5(Max)	8-SOIC N	Compliant	20 V	2	30 V	1000@Channel 1\|1250@Channel 2	5.3@Channel 1\|7.7@Channel 2 A	SOIC N	8	Enhancement	Gull-wing	-	4(Max)	30 V	5.3 A	1.55(Max)	8	SOIC	-	SI4816DY-T1-E3CT	:N Channel + Schottky	26@Channel 1\|44@Channel 2 ns	-	5 ns	12nC @ 5V	10@Channel 1\|15@Channel 2 ns	SOIC N	8@Channel 1\|12@Channel 2 ns	-	0.002	-	No	N	-	-	85412100	:2V	:18mohm	-	-	-	-	-	-	-	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 SUM45N25-58-E3 Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 MOSFET 250V 45A 375W 58mohm @ 10V N-CH 250V 45A 58mOhm TO263-3 MOSFET N-CH 250V 45A D2PAK SUM45N25-58-E3, N-channel MOSFET Transistor 45A 250V, 3-Pin TO-263 MOSFET,N CH,W DIODE,250V,45A,D2PAK Vishay N沟道 Si MOSFET , 45 A, Vds=250 V, 3针 TO-263封装 vishay / siliconix	741	1: ¥27.064	Rail / Tube, Tape & Reel	3TO-263	0.058 Ω	RoHS Compliant By Exemption	Reel	-	-55 to 175 °C	800	800	MOSFET N-Channel, Metal Oxide	Standard	3.75W	3.75 W	4V @ 250µA	58@10V mOhm	250V	45A (Tc)	Surface Mount	-	TO-263 (D2Pak)	Compliant	±30 V	1	250 V	3.75 W	45 A	TO-263	3	Enhancement	Gull-wing	Single	9.65mm	250 V	45 A	-	-	D2PAK	5000pF @ 25V	SUM45N25-58-E3CT	N-Channel	40 ns	-	220 ns	140nC	22 ns	TO-263	145 ns	-	0.00143	10.41 x 9.65 x 4.83mm	-	-	MOSFET	800	85412900	:4V	:0.047ohm	4.83mm	10.41mm	+/- 30 V	SMD/SMT	:3	:MSL 1 - Unlimited	-	-	-	-	-	-	Power MOSFET	TrenchFET	145 ns	-	-	-	-	220 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	RoHS-conform	NO	375W	250V	SUM45N25-58-E3	15 weeks	0.4K/W	-	-	-	-	-	-	-	-	-	-	-	-	-
3 HLT22507Z1K000KJ Res Wirewound 1K Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 1K OHM 10% 225W vishay / dale	100	1: ¥293.624	Bulk	Radial, Tubular	-	Contains lead / RoHS non-compliant	Bulk	Wirewound	-55 to 350 °C	-	-	-	-	-	225 W	-	-	-	-	-	266.7 mm	-	-	-	-	-	-	-	-	-	-	Solder Lugs	-	-	-	-	-	-	-	-	HLTA-1.0K	-	-	-	-	-	-	-	-	-	-	1.125" Dia x 10.500" L (28.58mm x 266.70mm)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 %	1 KOhm	225W	1k	33.34 mm	Brackets (not included)	Silicon Coated	Wirewound	±30ppm/°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 HLT22507Z25R00KJ Res Wirewound 25 Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 25 OHM 10% 225W vishay / dale	10	1: ¥293.624	Bulk	Radial, Tubular	-	Contains lead / RoHS non-compliant	Bulk	Wirewound	-55 to 350 °C	-	-	-	-	-	225 W	-	-	-	-	-	266.7 mm	-	-	-	-	-	-	-	-	-	-	Solder Lugs	-	-	-	-	-	-	-	-	HLTA-25	-	-	-	-	-	-	-	-	-	-	1.125" Dia x 10.500" L (28.58mm x 266.70mm)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 %	25 Ohm	225W	25	33.34 mm	Brackets (not included)	Silicon Coated	Wirewound	±30ppm/°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 HLT22507Z50R00KJ Res Wirewound 50 Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 50 OHM 10% 225W vishay / dale	10	1: ¥293.624	Bulk	Radial, Tubular	-	Contains lead / RoHS non-compliant	Bulk	Wirewound	-55 to 350 °C	-	-	-	-	-	225 W	-	-	-	-	-	266.7 mm	-	-	-	-	-	-	-	-	-	-	Solder Lugs	-	-	-	-	-	-	-	-	HLTA-50	-	-	-	-	-	-	-	-	-	-	1.125" Dia x 10.500" L (28.58mm x 266.70mm)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 %	50 Ohm	225W	50	33.34 mm	Brackets (not included)	Silicon Coated	Wirewound	±30ppm/°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9562901QCA Analog Switch Dual SPST 14-Pin CDIP vishay / siliconix	10	2: ¥850.204	Rail / Tube	14CDIP	70@±15V Ohm	-	-	Analog Switch	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Dual SPST	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	425@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	1000@±15V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 IRF840ASPBF Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK N-CH 500V 8A 850mOhm TO263-3 MOSFET N-CH 500V 8A D2PAK IRF840ASPBF, N-channel MOSFET Transistor 8A 500V, 3-Pin D2PAK MOSFET N-Chan 500V 8.0 Amp MOSFET, N, 500V, 8A, D2-PAK TRANSITOR,IRF840ASPBF Transistor: N-MOSFET; unipolar; 500V; 8A; 125W; D2PAK Vishay , N沟道 MOSFET, 8 A, Vds=500 V, 3针 D2PAK封装 Vishay Intertechnology, Inc.	246	1: ¥12.376	Bulk, Rail / Tube	3D2PAK	0.85 Ω	Lead free / RoHS Compliant	Tube	Power MOSFET	-55 to 150 °C	1000	50	MOSFET N-Channel, Metal Oxide	Standard	3.1W	3.1 W	4V @ 250µA	850@10V mOhm	500V	8A (Tc)	Surface Mount	10.41(Max)	D2PAK	Compliant	±30 V	1	500 V	3.1 W	8 A	D2PAK	3	Enhancement	Gull-wing	Single	9.65mm	500 V	8A	4.83(Max)	2	D2PAK	1018pF @ 25V	*IRF840ASPBF	N-Channel	26 ns	-	23 ns	38nC	11 ns	D2PAK	19 ns	-	0.0018	10.67 x 9.65 x 4.83mm	No	N	MOSFET	1000	85412900	:4V	:850mohm	4.83mm	10.67mm	+/- 30 V	SMD/SMT	:3	:-	-	-	-	:8A	:SMD	Compliant	Power MOSFET	HighV.	19 ns	Not Required dB	Not Required dB	-	Not Required MHz	23 ns	8 A	-	Not Required %	-	-	-	-	-	-	-	-	-	-	:500V	-	-	-	-	-	NO	RoHS-conform	NO	125W	500V	IRF840ASPBF	12 weeks	1K/W	:32A	Tab	50	:IRF840AS	1	:25°C	:1°C/W	-	-	-	-	-	-
7 IRFL9110PBF Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 MOSFET P-CH 100V 1.1A SOT223 IRFL9110PBF, P-channel MOSFET Transistor 1.1A 100V, 4-Pin SOT-223 MOSFET, P, -100V, -1.1A, SOT-223 MOSFET, P CH, 100V, 1.1A, SOT-223 MOSFET,Power;P-Ch;VDSS-100V;RDS(ON)1.2Ohms;ID-1.1A;SOT-223;PD3.1W;VGS+/-2 Transistor: P-MOSFET; unipolar; -100V; -1.1A; 3.1W; SOT223 MOSFET P, -100 V -1.1 A 2 W SOT-223, IRFL9110PBF, Vishay Vishay , P沟道 MOSFET, 1.1 A, Vds=100 V, 3+Tab针 SOT-223封装 Vishay Intertechnology, Inc.	2417	1: ¥3.0804	Bulk, Rail / Tube	4SOT-223	1.2 Ω	Lead free / RoHS Compliant	Tube	Power MOSFET	-55 to 150 °C	4000	80	MOSFET P-Channel, Metal Oxide	Standard	2W	2 W	4V @ 250µA	1200@10V mOhm	100V	1.1A (Tc)	Surface Mount	6.7(Max)	SOT-223	Compliant	±20 V	1	100 V	2 W	1.1 A	SOT-223	4	P	Gull-wing	Dual Drain, Single	3.7mm	100 V	1.1 A	1.8(Max) - 0.061	3	SOT-223	200pF @ 25V	-	:P Channel	15 ns	-5.5V	27 ns	8.7nC @ 10V	10 ns	SOT-223	17 ns	15ns	0.0002	6.7 x 3.7 x 1.45mm	No	P	-	-	85412900	:-4V	:1.2ohm	1.45mm	6.7mm	-	-	:3	:MSL 1 - Unlimited	-	-	-	:-1.1A	:SMD	Compliant	Power MOSFET	-	-	Not Required dB	Not Required dB	10ns	Not Required MHz	-	1.1 A	0.82S	Not Required %	P-Channel	-	-	-	-	-	-	-	-	-	:-100V	-	-	-	-	-	-	-	-	-	-	-	-	-	:8.8A	Tab	160	:FL9110	1	:25°C	:60°C/W	-	-	-	:7.3mm	:12mm	+150°C
5962-8671602EA Analog Switch Quad SPST 20-Pin LCC vishay / siliconix	-		Rail / Tube	20LCC	50@±15V Ohm	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	65@±10V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 SI7882DP-T1-E3 Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R N-CH REDUCED QG FAST SWITCH MOSFET MOSFET N-CH D-S 12V PPAK 8SOIC MOSFET, N, 8-SOIC vishay / siliconix	10	1: ¥7.344	Tape & Reel	8PowerPAK SO	5.5@4.5V	Lead free / RoHS Compliant	Tape and Reel	-	-55 to 150 °C	1	0	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.9W	-	1.4V @ 250µA	5.5@4.5V mOhm	12V	13A (Ta)	Surface Mount	4.9	PowerPAK® SO-8	Compliant	±8 V	1	12 V	:5W	13 A	PowerPAK SO	8	Enhancement	No Lead	-	5.89	-	-	1.04	8	-	-	-	:N Channel	82 ns	-	32 ns	30nC @ 4.5V	28 ns	-	35 ns	-	0.0001	-	-	-	-	-	85412900	:1.4V	:5.5mohm	-	-	-	-	:8	:MSL 1 - Unlimited	-	-	-	:13A	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:12V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG411AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	-	-	Analog Switch	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9076401MEA Analog Switch Quad SPST 16-Pin SBCDIP vishay / siliconix	10	50: ¥124.032	Rail / Tube	16SBCDIP	60@15V@-3V Ohm	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	-	-	±10 V	-	-	-	-	-	50@15V@-3V ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	70@15V@-3V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VQ1001P QUAD N-CH MOSFET SIDEBRAZE-14 30V 1.0 OHM (HOTS) Trans MOSFET N-CH 30V 0.83A 14-Pin SBCDIP MOSFET N-CH QD 30V 830mA 14DIP MOSFET QD 30V 0.53A MOSFET 4N-CH 30V 830MA 14DIP vishay / siliconix	10	25: ¥320.008	Rail / Tube	14SBCDIP	1000@12V	Contains lead / RoHS non-compliant	*	-	-55 to 150 °C	50	25	4 N-Channel	Logic Level Gate	1.3W	2 W	2.5V @ 1mA	1000@12V mOhm	30V	830mA	Through Hole	19.56(Max)	*	Not Compliant	±20 V	4	30 V	2000	0.83 A	SBCDIP	14	Enhancement	Through Hole	Quad	7.87 mm	30 V	0.83 A	3.05(Max)	14	SBCDIP	110pF @ 15V	-	N-Channel	-	-	-	-	-	-	-	-	0.042329 oz	-	-	-	MOSFET	25	-	-	-	4.45 mm	19.56 mm	+/- 20 V	Through Hole	-	-	-	-	-	-	-	-	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N6660JTXV02 Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD MOSFET N-CH 60V 990MA TO-205 vishay / siliconix	10	20: ¥1,351.296	Bulk	3TO-205AD	3000@10V	Contains lead / RoHS non-compliant	Tube	Power MOSFET	-55 to 125 °C	20	20	MOSFET N-Channel, Metal Oxide	Standard	725mW	0.725 W	2V @ 1mA	3000@10V mOhm	60V	990mA (Tc)	Through Hole	9.4(Max)	TO-39	Supplier Unconfirmed	±20 V	1	60 V	725	0.99 A	TO-205AD	3	Enhancement	-	-	8.15(Max)	60 V	0.99 A	6.6(Max)	3	TO-205AD	50pF @ 25V	-	-	-	-	-	-	-	TO-205AD	-	-	-	-	No	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG412AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	-	-	Analog Switch	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VP0808B Trans MOSFET P-CH 80V 0.88A 3-Pin TO-205AD MOSFET P-CH 80V 3A TO-205 MOSFET P-CH 80V 880MA TO-205 vishay / siliconix	10	100: ¥456.96	Bulk	3TO-205AD	5000@10V	Contains lead / RoHS non-compliant	*	-	-55 to 150 °C	-	-	MOSFET P-Channel, Metal Oxide	Standard	6.25W	-	4.5V @ 1mA	5000@10V mOhm	80V	880mA (Ta)	Through Hole	-	*	Not Compliant	±20 V	1	80 V	6250	0.88 A	TO-205AD	3	P	-	-	-	-	-	-	-	TO-205AD	150pF @ 25V	-	-	20 ns	-	30 ns	-	11 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD9123 -60V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PACKAG TRANSISTOR:FET:SM SIGNAL MOSFET P-CH 100V 1A 4-DIP MOSFET P-Chan 100V 1.0 Amp Vishay Intertechnology, Inc.	10	1800: ¥8.976	2,500	4-DIP (0.300", 7.62mm)	-	Contains lead / RoHS non-compliant	Bulk	-	-	1	0	MOSFET P-Channel, Metal Oxide	Standard	1.3W	-	4V @ 250µA	600 mOhm @ 600mA, 10V	100V	1A (Ta)	Through Hole	-	4-HVMDIP	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	390pF @ 25V	-	-	-	-	-	18nC @ 10V	-	-	-	-	-	-	-	-	MOSFET	2500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Vishay Intertechnology, Inc.- Logic ICs

Logic ICs - 型号列表

On-State Resistance (Max)

Package / Case

Rds On (Max) @ Id, Vgs

Current - Continuous Drain (Id) @ 25degC

Current - Peak Pulse (10/1000us)

Power - Max

Power Dissipation (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Supplier Device Package

Voltage - Breakdown

Drain to Source Voltage (Vdss)

Width

Length - Overall

Package Quantity

Other Names

Delay to 1st Tap

Propagation Delay (Max)

Gate Charge (Qg) (Max) @ Vgs

MOQ

Unit Pack

Power - Rated

Vgs(th) (Max) @ Id

Vce(on) (Max) @ Vge, Ic

Input Capacitance (Ciss) (Max) @ Vds

Shell Size - Insert

Fall Time (Typ)

Switch Time (Ton, Toff) (Max)

Weight

Configuration

Standard Package

FET Type

Standard Package Name

Transistor Type

Delay Time - OFF

Resistance - RDS(On)

Length

Packaging

Package Cooled

Number of Positions

Printed Circuit Board

Factory Pack Quantity

Voltage - Supply

Voltage - Threshold

Height

Size / Dimension

Vgs (Max)

Type

Operating Temperature

Current Rating (Max)

Lead Style

Turn On Time

RoHS

EU RoHS

Number of Elements

Channel Type

Tariff No

Fall Time

Delay Time - ON

Rise Time (Typ)

Current Drain (Id) - Max

Current Transfer Ratio (Max)

Technology

Resistance

Resistance (Ohms)

Contact Voltage (Max)

FET Feature

Mounting Type

Polarity

Part # Aliases

Voltage - Gate Trigger (Vgt) (Max)

Polarization

Mounting Style

Number of Pins

Material Finish

Thermal Resistance @ Natural

Power (Watts) - Per Port

Voltage - Supply (Vcc/Vdd)

Matchcode