Vishay Intertechnology, Inc.- Standard Logic ICs

Vishay Intertechnology, Inc. was founded in 1962 by Dr. Felix Zandman, with headquarters in Malvern, Pennsylvania, USA. The company is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Its core business encompasses the design, manufacture, and supply of a vast array of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. In the discrete semiconductor segment, key product lines include TrenchFET® MOSFETs, Schottky diodes, and infrared (IR) emitter/detector components for sensing and remote control. For passive components, Vishay offers industry-leading series such as IHLP® power inductors for high-current applications, Power Metal Strip® resistors for precise current sensing, and Tantalum/MLCC capacitors under the Tantamount® brand. The company serves diverse end markets including industrial, power supply, automotive, computing, consumer, telecommunications, military, aerospace, and medical electronics. Vishay holds a leading market position globally in power discretes and passives, known for its technological innovation and extensive product portfolio. Its “one-stop shop” service model and successful acquisition strategy have enabled it to deliver complete component solutions. With manufacturing facilities across the Americas, Europe, and Asia, Vishay maintains a broad global footprint and is a major partner to distributors like Digi-Key, underscoring its supply chain strength.

Standard Logic ICs - 型号列表

205 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	Package / Case	On-State Resistance (Max)	MOQ	Unit Pack	RoHS	FET Type	FET Feature	Power - Max	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25degC	Packaging	Mounting Type	Supplier Device Package	Configuration	EU RoHS	Vgs (Max)	Number of Elements	Voltage - Breakdown	Power Dissipation (Max)	Current - Peak Pulse (10/1000us)	Package Quantity	Number of Positions	Type	Channel Type	Operating Temperature	Width	Power - Rated	Vce(on) (Max) @ Vge, Ic	Current - Drain (Idss) @ Vds (Vgs=0)	Length - Overall	Shell Size - Insert	Printed Circuit Board	Standard Package Name	Input Capacitance (Ciss) (Max) @ Vds	Transistor Type	Delay to 1st Tap	Propagation Delay (Max)	Gate Charge (Qg) (Max) @ Vgs	Switch Time (Ton, Toff) (Max)	Lead Style	Package Cooled	Fall Time (Typ)	Voltage - Supply	Weight	Polarity	Product Category	Factory Pack Quantity	Tariff No	Delay Time - OFF	Voltage - Threshold	Resistance - RDS(On)	Height	Length	Other Names	Voltage - Gate Trigger (Vgt) (Max)	Mounting Style	Number of Pins	Rad Hardened	Material Finish	Size / Dimension	Card Standard	Input Signal	Turn On Time	Switch Function/Rating	Fall Time	Rise Time (Typ)	Current Rating (Max)	Termination	DELETED	Technology	Contact Voltage (Max)	Tab Width	Spg	Number of Units	Noise Figure	Power - Output	Delay Time - ON	Frequency - Max	Current Drain (Id) - Max	Current Transfer Ratio (Max)	Vce Saturation (Max) @ Ib, Ic	Polarization	Current - Peak Pulse (8/20us)	Temperature - Test	Thermal Resistance	Common Mode Transient Immunity (Min)	Tradename	Part # Aliases	Thermal Resistance @ Natural	Manufacturer	Automotive	Leadfree Defin	Logic Type	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Matchcode	Standard Leadtime	Thermal Resistance @ GPM	SMD Marking	Diode Configuration	Module/Board Type	Series	Depth	Tape Width - Max	Operating Temperature - Junction	Gate Charge	Current Transfer Ratio (Min)	DC Resistance (DCR) - Primary	Schematic	SVHC	Lead Spacing
2N6661JTXV02 Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD MOSFET N-CH 90V 860MA TO-205 vishay / siliconix	10	1: ¥3,255.976	Bulk	3TO-205AD	4000@10V	20	20	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	725mW	2V @ 1mA	4000@10V mOhm	90V	860mA (Tc)	Tube	Through Hole	TO-39	-	Not Compliant	±20 V	1	90 V	725	0.86 A	TO-205AD	3	Power MOSFET	Enhancement	-55 to 150 °C	8.15(Max)	0.725 W	90 V	0.86 A	9.4(Max)	6.6(Max)	3	-	50pF @ 25V	-	-	-	-	-	-	TO-205AD	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SI4947ADY-T1-E3 Trans MOSFET P-CH 30V 3.9A 8-Pin SOIC N T/R MOSFET P-CH DUAL 30V 3.0A 8-SOIC SI4947ADY-T1-E3, Dual P-channel MOSFET Transistor 3.9A 30V, 8-Pin SOIC MOSFET 30V 3.9A 2W MOSFET, DUAL P, SO-8 MOSFET;SO8Dual30VP-CH,4.5VRated vishay / siliconix	10	2500: ¥2.2372	Tape & Reel	8SOIC N	0.08 Ω	-	-	Lead free / RoHS Compliant	2 P-Channel (Dual)	Logic Level Gate	1.2W	1V @ 250µA	80@10V mOhm	30V	3A	Tape and Reel	Surface Mount	8-SOIC N	Dual, Dual Drain	Compliant	±20 V	2	30 V	2 W	3.9 A	SOIC N	8	Power MOSFET	P	-55 to 150 °C	4mm	2 W	30 V	3 A	5(Max)	1.55(Max)	8	SOIC	-	P-Channel	21 ns	9 ns	8nC @ 5V	8 ns	Gull-wing	SOIC N	10 ns	-1.2V	0.000001	P	MOSFET	2500	85322300	21ns	:-1V	:62mohm	1.55mm	5mm	SI4947ADY-T1-E3CT	+/- 20 V	SMD/SMT	:8	No	:MSL 1 - Unlimited	5 x 4 x 1.55mm	Power MOSFET	-	-	-	10 ns	9 ns	:-3A	:SMD	Compliant	-	-	-	-	-	Not Required dB	Not Required dB	8ns	Not Required MHz	3.9 A	5S	Not Required %	P-Channel	-	-	-	-	TrenchFET	SI4947ADY-E3	87°C/W	-	-	-	-	-	-	-	-	-	-	:SOIC	:Dual	-	-	-	-	-	-	-	-	-	-
6 SI3552DV-T1-E3 Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET N/P-CH 30V 2.5/1.8A 6TSOP MOSFET;Dual; Complementary; 30V; 2.5/1.8A; TSOP-6 MOSFET 30V 2.5/1.8A MOSFET,Dual,Complementary,30V,2.5/1.8A,TSOP-6 vishay / siliconix	24	1: ¥25.641	Tape & Reel	6TSOP	0.105/0.2Ohms	3000	3000	Lead free / RoHS Compliant	N and P-Channel	Logic Level Gate	1.15W	1V @ 250µA	105@10V@N Channel\|200@10V@P Channel mOhm	30V	2.5A, 1.8A	Tape and Reel	Surface Mount	6-TSOP	Dual	Compliant	±20 V	2	30 V	1.15W	2.5@N Channel\|1.8@P Channel A	TSOP	6	Complementary	N\|P	-55 to 150 °C	1.65 mm	1.15 W	+/- 30 V	2.5 A, 1.8 A	3.05	1(Max)	6	TSOP	-	N and P-Channel	13@N Channel\|12@P Channel ns	9@N Channel\|12@P Channel ns	3.2nC @ 5V	7@N Channel\|8@P Channel ns	Gull-wing	-	5@N Channel\|7@P Channel ns	0.81/-0.83V	-	-	MOSFET	3000	-	13/12ns	-	-	1.1 mm	3.05 mm	SI3552DV-T1-E3CT	+/- 20 V	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	Si	-	-	-	-	-	-	7/8ns	-	-	4.3/2.4S	-	N-ChannelandP-Channel	-	-	-	-	TrenchFET	SI3552DV-E3	130°C/W	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	TrenchFET®	-	-	-	-	-	-	-	-	-
2 SI4816DY-T1-E3 Trans MOSFET N-CH 30V 5.3A/7.7A 8-Pin SOIC N T/R MOSFET N-CH DUAL 30V 8-SOIC DUAL N CH/SCHOTTKY MOSFET, 30V SOIC vishay / siliconix	10	1: ¥12.308	Tape & Reel	8SOIC N	22@10V@Channel 1\|13@10V@Channel 2	1	0	Lead free / RoHS Compliant	2 N-Channel (Dual)	Logic Level Gate	1W, 1.25W	2V @ 250µA	22@10V@Channel 1\|13@10V@Channel 2 mOhm	30V	5.3A, 7.7A	Tape and Reel	Surface Mount	8-SOIC N	-	Compliant	20 V	2	30 V	1000@Channel 1\|1250@Channel 2	5.3@Channel 1\|7.7@Channel 2 A	SOIC N	8	Power MOSFET	Enhancement	-55 to 150 °C	4(Max)	7.7 W	30 V	5.3 A	5(Max)	1.55(Max)	8	SOIC	-	:N Channel + Schottky	26@Channel 1\|44@Channel 2 ns	5 ns	12nC @ 5V	10@Channel 1\|15@Channel 2 ns	Gull-wing	SOIC N	8@Channel 1\|12@Channel 2 ns	-	0.002	N	-	-	85412100	-	:2V	:18mohm	-	-	SI4816DY-T1-E3CT	-	-	-	No	-	-	-	-	-	-	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 SUM45N25-58-E3 Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 MOSFET 250V 45A 375W 58mohm @ 10V N-CH 250V 45A 58mOhm TO263-3 MOSFET N-CH 250V 45A D2PAK SUM45N25-58-E3, N-channel MOSFET Transistor 45A 250V, 3-Pin TO-263 MOSFET,N CH,W DIODE,250V,45A,D2PAK Vishay N沟道 Si MOSFET , 45 A, Vds=250 V, 3针 TO-263封装 vishay / siliconix	10	1: ¥22.911	Rail / Tube, Tape & Reel	3TO-263	0.058 Ω	800	800	RoHS Compliant By Exemption	MOSFET N-Channel, Metal Oxide	Standard	3.75W	4V @ 250µA	58@10V mOhm	250V	45A (Tc)	Reel	Surface Mount	TO-263 (D2Pak)	Single	Compliant	±30 V	1	250 V	3.75 W	45 A	TO-263	3	-	Enhancement	-55 to 175 °C	9.65mm	3.75 W	250 V	45 A	-	-	-	D2PAK	5000pF @ 25V	N-Channel	40 ns	220 ns	140nC	22 ns	Gull-wing	TO-263	145 ns	-	0.00143	-	MOSFET	800	85412900	-	:4V	:0.047ohm	4.83mm	10.41mm	SUM45N25-58-E3CT	+/- 30 V	SMD/SMT	:3	-	:MSL 1 - Unlimited	10.41 x 9.65 x 4.83mm	Power MOSFET	-	-	-	145 ns	220 ns	-	-	-	TrenchFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	RoHS-conform	NO	375W	250V	SUM45N25-58-E3	15 weeks	0.4K/W	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9562901QCA Analog Switch Dual SPST 14-Pin CDIP vishay / siliconix	10	2: ¥850.204	Rail / Tube	14CDIP	70@±15V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Dual SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	425@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	1000@±15V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 IRF840ASPBF Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK N-CH 500V 8A 850mOhm TO263-3 MOSFET N-CH 500V 8A D2PAK IRF840ASPBF, N-channel MOSFET Transistor 8A 500V, 3-Pin D2PAK MOSFET N-Chan 500V 8.0 Amp MOSFET, N, 500V, 8A, D2-PAK TRANSITOR,IRF840ASPBF Transistor: N-MOSFET; unipolar; 500V; 8A; 125W; D2PAK Vishay , N沟道 MOSFET, 8 A, Vds=500 V, 3针 D2PAK封装 Vishay Intertechnology, Inc.	10	1: ¥11.9805	Bulk, Rail / Tube	3D2PAK	0.85 Ω	1000	50	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	3.1W	4V @ 250µA	850@10V mOhm	500V	8A (Tc)	Tube	Surface Mount	D2PAK	Single	Compliant	±30 V	1	500 V	3.1 W	8 A	D2PAK	3	Power MOSFET	Enhancement	-55 to 150 °C	9.65mm	3.1 W	500 V	8A	10.41(Max)	4.83(Max)	2	D2PAK	1018pF @ 25V	N-Channel	26 ns	23 ns	38nC	11 ns	Gull-wing	D2PAK	19 ns	-	0.0018	N	MOSFET	1000	85412900	-	:4V	:850mohm	4.83mm	10.67mm	*IRF840ASPBF	+/- 30 V	SMD/SMT	:3	No	:-	10.67 x 9.65 x 4.83mm	Power MOSFET	-	-	-	19 ns	23 ns	:8A	:SMD	Compliant	HighV.	:500V	Tab	50	1	Not Required dB	Not Required dB	-	Not Required MHz	8 A	-	Not Required %	-	:32A	:25°C	:1°C/W	-	-	-	-	-	NO	RoHS-conform	NO	125W	500V	IRF840ASPBF	12 weeks	1K/W	:IRF840AS	-	-	-	-	-	-	-	-	-	-	-	-
7 IRFL9110PBF Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 MOSFET P-CH 100V 1.1A SOT223 IRFL9110PBF, P-channel MOSFET Transistor 1.1A 100V, 4-Pin SOT-223 MOSFET, P, -100V, -1.1A, SOT-223 MOSFET, P CH, 100V, 1.1A, SOT-223 MOSFET,Power;P-Ch;VDSS-100V;RDS(ON)1.2Ohms;ID-1.1A;SOT-223;PD3.1W;VGS+/-2 Transistor: P-MOSFET; unipolar; -100V; -1.1A; 3.1W; SOT223 MOSFET P, -100 V -1.1 A 2 W SOT-223, IRFL9110PBF, Vishay Vishay , P沟道 MOSFET, 1.1 A, Vds=100 V, 3+Tab针 SOT-223封装 Vishay Intertechnology, Inc.	2417	1: ¥3.0804	Bulk, Rail / Tube	4SOT-223	1.2 Ω	4000	80	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Standard	2W	4V @ 250µA	1200@10V mOhm	100V	1.1A (Tc)	Tube	Surface Mount	SOT-223	Dual Drain, Single	Compliant	±20 V	1	100 V	2 W	1.1 A	SOT-223	4	Power MOSFET	P	-55 to 150 °C	3.7mm	2 W	100 V	1.1 A	6.7(Max)	1.8(Max) - 0.061	3	SOT-223	200pF @ 25V	:P Channel	15 ns	27 ns	8.7nC @ 10V	10 ns	Gull-wing	SOT-223	17 ns	-5.5V	0.0002	P	-	-	85412900	15ns	:-4V	:1.2ohm	1.45mm	6.7mm	-	-	-	:3	No	:MSL 1 - Unlimited	6.7 x 3.7 x 1.45mm	Power MOSFET	-	-	-	-	-	:-1.1A	:SMD	Compliant	-	:-100V	Tab	160	1	Not Required dB	Not Required dB	10ns	Not Required MHz	1.1 A	0.82S	Not Required %	P-Channel	:8.8A	:25°C	:60°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	:FL9110	-	-	-	:7.3mm	:12mm	+150°C	-	-	-	-	-	-
5962-8671602EA Analog Switch Quad SPST 20-Pin LCC vishay / siliconix	-		Rail / Tube	20LCC	50@±15V Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	65@±10V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 SI7882DP-T1-E3 Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R N-CH REDUCED QG FAST SWITCH MOSFET MOSFET N-CH D-S 12V PPAK 8SOIC MOSFET, N, 8-SOIC vishay / siliconix	10	1: ¥7.344	Tape & Reel	8PowerPAK SO	5.5@4.5V	1	0	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.9W	1.4V @ 250µA	5.5@4.5V mOhm	12V	13A (Ta)	Tape and Reel	Surface Mount	PowerPAK® SO-8	-	Compliant	±8 V	1	12 V	:5W	13 A	PowerPAK SO	8	-	Enhancement	-55 to 150 °C	5.89	-	-	-	4.9	1.04	8	-	-	:N Channel	82 ns	32 ns	30nC @ 4.5V	28 ns	No Lead	-	35 ns	-	0.0001	-	-	-	85412900	-	:1.4V	:5.5mohm	-	-	-	-	-	:8	-	:MSL 1 - Unlimited	-	-	-	-	-	-	-	:13A	:SMD	-	-	:12V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG411AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9076401MEA Analog Switch Quad SPST 16-Pin SBCDIP vishay / siliconix	10	50: ¥124.032	Rail / Tube	16SBCDIP	60@15V@-3V Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±10 V	-	-	-	-	-	50@15V@-3V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	70@15V@-3V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VQ1001P QUAD N-CH MOSFET SIDEBRAZE-14 30V 1.0 OHM (HOTS) Trans MOSFET N-CH 30V 0.83A 14-Pin SBCDIP MOSFET N-CH QD 30V 830mA 14DIP MOSFET QD 30V 0.53A MOSFET 4N-CH 30V 830MA 14DIP vishay / siliconix	10	25: ¥320.008	Rail / Tube	14SBCDIP	1000@12V	50	25	Contains lead / RoHS non-compliant	4 N-Channel	Logic Level Gate	1.3W	2.5V @ 1mA	1000@12V mOhm	30V	830mA	*	Through Hole	*	Quad	Not Compliant	±20 V	4	30 V	2000	0.83 A	SBCDIP	14	-	Enhancement	-55 to 150 °C	7.87 mm	2 W	30 V	0.83 A	19.56(Max)	3.05(Max)	14	SBCDIP	110pF @ 15V	N-Channel	-	-	-	-	Through Hole	-	-	-	0.042329 oz	-	MOSFET	25	-	-	-	-	4.45 mm	19.56 mm	-	+/- 20 V	Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N6660JTXV02 Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD MOSFET N-CH 60V 990MA TO-205 vishay / siliconix	10	20: ¥1,351.296	Bulk	3TO-205AD	3000@10V	20	20	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	Standard	725mW	2V @ 1mA	3000@10V mOhm	60V	990mA (Tc)	Tube	Through Hole	TO-39	-	Supplier Unconfirmed	±20 V	1	60 V	725	0.99 A	TO-205AD	3	Power MOSFET	Enhancement	-55 to 125 °C	8.15(Max)	0.725 W	60 V	0.99 A	9.4(Max)	6.6(Max)	3	TO-205AD	50pF @ 25V	-	-	-	-	-	-	TO-205AD	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG412AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VP0808B Trans MOSFET P-CH 80V 0.88A 3-Pin TO-205AD MOSFET P-CH 80V 3A TO-205 MOSFET P-CH 80V 880MA TO-205 vishay / siliconix	10	100: ¥456.96	Bulk	3TO-205AD	5000@10V	-	-	Contains lead / RoHS non-compliant	MOSFET P-Channel, Metal Oxide	Standard	6.25W	4.5V @ 1mA	5000@10V mOhm	80V	880mA (Ta)	*	Through Hole	*	-	Not Compliant	±20 V	1	80 V	6250	0.88 A	TO-205AD	3	-	P	-55 to 150 °C	-	-	-	-	-	-	-	TO-205AD	150pF @ 25V	-	20 ns	30 ns	-	11 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD9123 -60V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PACKAG TRANSISTOR:FET:SM SIGNAL MOSFET P-CH 100V 1A 4-DIP MOSFET P-Chan 100V 1.0 Amp Vishay Intertechnology, Inc.	10	1800: ¥8.976	2,500	4-DIP (0.300", 7.62mm)	-	1	0	Contains lead / RoHS non-compliant	MOSFET P-Channel, Metal Oxide	Standard	1.3W	4V @ 250µA	600 mOhm @ 600mA, 10V	100V	1A (Ta)	Bulk	Through Hole	4-HVMDIP	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	390pF @ 25V	-	-	-	18nC @ 10V	-	-	-	-	-	-	-	MOSFET	2500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-8996101EA Analog Switch Dual DPST 16-Pin CDIP vishay / siliconix	-		Rail / Tube	16CDIP	55@±13.5V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Dual DPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	100@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	150@±15V ns	DPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
11 IRFBF30PBF Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB MOSFET N-Chan 900V 3.6 Amp MOSFET N-CH 900V 3.6A TO-220AB IRFBF30PBF, N-channel MOSFET Transistor, 3.6A 900V, 3-Pin TO-220AB N CHANNEL MOSFET, 900V, 3.6A TO-220 IRFBF30PBF Transistor: N-MOSFET; unipolar; 900V; 3.6A; 125W; TO220AB Vishay , N沟道 MOSFET, 3.6 A, Vds=900 V, 3针 TO-220AB封装 Vishay Intertechnology, Inc.	13	1: ¥17.3775	Rail / Tube	3TO-220AB	3.7 Ω	1000	50	RoHS Compliant By Exemption	MOSFET N-Channel, Metal Oxide	Standard	125W	4V @ 250µA	3700@10V mOhm	900V	3.6A (Tc)	Tube	Through Hole	TO-220AB	Single	Compliant	±20 V	1	900 V	125 W	3.6 A	TO-220AB	3	-	Enhancement	-55 to 150 °C	4.7mm	125 W	900 V	3.6 A	10.41(Max)	9.01(Max)	3	TO-220	1200pF @ 25V	N-Channel	90 ns	25 ns	78nC @ 10V	14 ns	Through Hole	TO-220AB	30 ns	-	0.00204	unipolar	MOSFET	1000	85412900	-	:4V	:3.7ohm	9.01mm	10.41mm	*IRFBF30PBF	+/- 20 V	Through Hole	:3	-	-	10.41 x 4.7 x 9.01mm	Power MOSFET	-	-	-	30 ns	25 ns	-	-	-	-	-	Tab	10	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	78 nC	2.3 S	2.3 S	see	-	-
10 IRFP360LCPBF Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC MOSFET N-CH 400V 23A TO-247AC IRFP360LCPBF, N-channel MOSFET Transistor, 23A 400V, 3-Pin TO-247AC MOSFET N-Chan 400V 23 Amp Trans MOSFET N-CH 400V 23A 3-Pin (3+Tab) TO-247AC MOSFET, N, 400V, 23A, TO-247AC IRFP360LCPBF Transistor: N-MOSFET; unipolar; 400V; 23A; 280W; TO247AC Vishay , N沟道 MOSFET, 23 A, Vds=400 V, 3针 TO-247AC封装 Vishay Intertechnology, Inc.	565	1: ¥28.424	Bulk, Rail / Tube	3TO-247AC	0.2 Ω	500	25	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	280W	4V @ 250µA	200@10V mOhm	400V	23A (Tc)	Tube	Through Hole	TO-247-3	Single	Compliant	±30 V	1	400 V	280 W	23 A	TO-247AC	3	-	Enhancement	-55 to 150 °C	5.31mm	280 W	400 V	23 A	15.87(Max)	20.7(Max)	3	TO-247	3400pF @ 25V	N-Channel	42 ns	75 ns	110nC @ 10V	16 ns	Through Hole	TO-247AC	50 ns	-	0.006	unipolar	MOSFET	500	85412900	-	:4V	:200mohm	20.7mm	15.87mm	*IRFP360LCPBF	+/- 30 V	Through Hole	:3	-	:-	15.87 x 5.31 x 20.7mm	Power MOSFET	-	-	-	50 ns	75 ns	:23A	:Through Hole	-	-	:400V	Tab	30	1	-	-	-	-	-	-	-	-	:92A	:25°C	:0.45°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:No SVHC (19-Dec-2012)	:5.45mm

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Vishay Intertechnology, Inc.- Standard Logic ICs

Standard Logic ICs - 型号列表

On-State Resistance (Max)

Package / Case

Rds On (Max) @ Id, Vgs

Current - Continuous Drain (Id) @ 25degC

Current - Peak Pulse (10/1000us)

Power - Max

Power Dissipation (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Supplier Device Package

Voltage - Breakdown

Drain to Source Voltage (Vdss)

Width

Package Quantity

Delay to 1st Tap

Propagation Delay (Max)

Gate Charge (Qg) (Max) @ Vgs

Vce(on) (Max) @ Vge, Ic

Input Capacitance (Ciss) (Max) @ Vds

Shell Size - Insert

Fall Time (Typ)

Switch Time (Ton, Toff) (Max)

Weight

MOQ

Power - Rated

Length - Overall

Standard Package Name

Resistance - RDS(On)

Configuration

Unit Pack

Vgs(th) (Max) @ Id

Package Cooled

Other Names

Delay Time - OFF

Height

Length

Standard Package

FET Type

Factory Pack Quantity

Transistor Type

Size / Dimension

Packaging

Number of Positions

Printed Circuit Board

Fall Time

Rise Time (Typ)

Voltage - Supply

Voltage - Threshold

Current Rating (Max)

Turn On Time

Vgs (Max)

Contact Voltage (Max)

Spg

RoHS

EU RoHS

Number of Elements

Type

Polarity

Channel Type

Operating Temperature

Tariff No

Delay Time - ON

Current Drain (Id) - Max

Current Transfer Ratio (Max)

Lead Style

Technology

Current - Peak Pulse (8/20us)

Thermal Resistance

FET Feature

Mounting Type

Part # Aliases

Voltage - Gate Trigger (Vgt) (Max)

Termination

Polarization

Mounting Style

Number of Pins

Material Finish

Thermal Resistance @ Natural

Power (Watts) - Per Port