Wolfspeed, Inc. is a leading American semiconductor company specializing in wide-bandgap silicon carbide (SiC) and gallium nitride (GaN) technologies. Originally founded in 1987 as Cree, Inc., the company pioneered SiC material development and commercialization. Headquartered in Durham, North Carolina, Wolfspeed rebranded from Cree's power and RF division in 2015 and became a pure-play wide-bandgap semiconductor company in 2021 after divesting its LED business. Its core business spans SiC substrates, epitaxy, power devices, and RF GaN-on-SiC solutions. The power portfolio includes industry-leading SiC MOSFETs (e.g., C3M series), Schottky diodes, power modules, and gate driver boards for electric vehicles, fast charging, renewable energy, and industrial drives. For RF applications, Wolfspeed offers high-performance GaN HEMTs and MMICs targeting 5G infrastructure, defense radar, and satellite communications. The company operates the world's largest and first 200mm SiC wafer fab in Marcy, New York, underscoring its manufacturing leadership. Wolfspeed is the largest global supplier of SiC wafers and holds a dominant technological position in the SiC power device market. Its vertical integration from substrate to device, combined with strategic partnerships with major automotive OEMs and tier-one suppliers, positions it as a critical enabler of the electric vehicle revolution and next-generation high-efficiency power systems.