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GT30J igbt chip Series

N-channel IGBT transistors, 600V, 30A, TO-3P package

The GT30J series from Toshiba Corporation is a lineup of N-channel IGBT transistors designed for power conversion applications requiring high reliability and efficiency. These devices operate at a nominal voltage of 600V and can handle continuous currents up to 30A, making them suitable for a range of industrial and automotive applications. If you're working on inverters, motor drives, or any system that needs efficient switching and control of power, these IGBTs are a solid choice.

One thing worth noting is their TO-3P package, which provides excellent thermal performance and robustness against mechanical stress. This makes them particularly useful in environments where thermal management is critical and the components need to withstand significant physical strain. Engineers tend to reach for this when they need a reliable solution that can handle high power levels and maintain consistent performance over time. The 600V rating also means they can be used in a variety of voltage applications without needing to worry about voltage ratings, further simplifying design considerations.

Series Images (7)

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Frequently Asked Questions

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GT30J igbt chip - Part List

12 parts in total

Operating Temperature

Power Dissipation (Max)

Width

Standard Package

Mounting Type

Package / Case

Package Quantity

Voltage - Supply

Length

Current - Collector Cutoff (Max)

Current - Collector (Ic) (Max)

Current - Collector Pulsed (Icm)

Height

Transistor Type

Number of Pins

Frequency

Voltage - Gate Trigger (Vgt) (Max)

Size / Dimension

Mfr Part #Quantity AvailablePriceCategoryCurrent - Collector Cutoff (Max)Mounting TypeStandard PackageVgs (Max)Voltage - Input (Min)Package / CaseConfigurationOperating TemperatureVoltage - SupplyPower Dissipation (Max)WidthPackage QuantityChannel TypeCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)HeightLengthTransistor TypeNumber of PinsEU RoHSNumber of PositionsRoHSInput TypePower - MaxSwitching EnergyTd (on/off) @ 25degCVce(on) (Max) @ Vge, IcPackagingSupplier Device PackageTest ConditionFrequencyVoltage - Gate Trigger (Vgt) (Max)Size / DimensionTab WidthLength - OverallShell Size - InsertPrinted Circuit BoardProduct CategoryFactory Pack QuantityCurrent - Continuous Drain (Id) @ 25degCMounting StyleEnergySeriesTechnologyManufacturerStandard Package NameSVHCTariff NoRise Time (Typ)Rise / Fall Time (Typ)WeightTerminationMaterial FinishThermal ResistanceOperating Temperature - JunctionReverse Recovery Time (trr)Channels per ICInput Capacitance (Ciss) (Max) @ VdsFunctionOther Specifications
GT30J322(Q)
GT30J322(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3P(N)IS

toshiba

221: ¥38.30-30 AThrough HoleRail / Tube±20 V600 V3TO-3P(N)ISSingle-----------------------------------------------------
GT30J311
GT30J311

Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-3P(SM)

toshiba

0-30 ASurface MountRail / Tube±20 V600 V3TO-3P(SM)Single150-14500013.5TO-3P(SM)N------Not Compliant3------------Tab15.9(Max)5(Max)2-----------------------
GT30J121(Q)
2
GT30J121(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN IGBT 600V 30A 170W TO3PN IGBT Transistors 600V/30A DIS

toshiba

931: ¥31.484-30 AThrough HoleBulk±20 V600 V3TO-3PNSingle- 55 C600V-4.8 mm--30A60A19 mm15.9 mm----Lead free / RoHS CompliantStandard170W1mJ (on), 800µJ (off)90ns/300ns2.45V @ 15V, 30ATubeTO-3P(N)300V, 30A, 24 Ohm-------IGBT Transistors5030 AThrough Hole1mJ (on), 800µJ (off)GT30J121SiToshiba---------------
GT30J101
GT30J101

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN

toshiba

0-30 AThrough HoleRail / Tube±20 V600 V3TO-3PNSingle-----------------------------------------------------
GT30J324
2
GT30J324

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN IGBT, 600V, TO-3P(N)

toshiba

101: ¥58.14-30 AThrough HoleRail / Tube±20 V600 V3TO-3PNSingle:-55°C:2.45V:170W-TO-3PNN:30A:60A--:IGBT:3Not Compliant3------------------------TO-3PN:No SVHC (20-Jun-2013)85412900:70ns:50ns0.0046:Through Hole:-:0.735°C/W:150°C-----
GT30J324(Q)
GT30J324(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN IGBT 600V 30A 170W TO3PN

toshiba

5850: ¥54.50-30 AThrough HoleBulk, Rail / Tube±20 V600 V3TO-3PNSingle-600V----30A60A------Lead free / RoHS CompliantStandard170W1mJ (on), 800µJ (off)90ns/300ns2.45V @ 15V, 30ATubeTO-3P(N)300V, 30A, 24 Ohm-------------------------60ns----
GT30J322
GT30J322

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3P(N)IS

toshiba

0-30 AThrough HoleRail / Tube±20 V600 V3TO-3P(N)ISSingle-----------------------------------------------------
GT30J301
GT30J301

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN

toshiba

0-30 AThrough HoleRail / Tube±20 V600 V3TO-3PNSingle-----------------------------------------------------
GT30J121
GT30J121

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN Toshiba , N沟道 IGBT, 30 A, Vce=600 V, 1MHz, 3针 TO-3P封装

toshiba

13250: ¥32.421-30 AThrough HoleRail / Tube±20 V600 V3TO-3PNSingle+150 °C600 V170 W4.8mmTO-3PN--20mm15.9mm3-----------1MHz±20V15.9 x 4.8 x 20mm--------------------------
GT30J101(Q)
GT30J101(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin (3+Tab) TO-3P(N)

Toshiba

0-------------------------------------------------------------
GT30J301(Q)
GT30J301(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin (3+Tab) TO-3P(N)

Toshiba

101: ¥1,452.90-------------------------------------------------------------
GT30J341,Q(O
GT30J341,Q(O

Toshiba , N沟道 IGBT, 59 A, Vce=600 V, 0.4μs, 3针 TO-3P封装

Toshiba

101: ¥1,394.283-59 A通孔-----+175 °C600 V230 W4.5mmTO-3PNN--20mm15.5mm3-----------0.4µs±25V15.5 x 4.5 x 20mm------------------------2900pFY0.8mJ
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