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H5MS1 Series
High-speed DDR SDRAM memory modules for mobile and electronic devices
The H5MS1 series from SK hynix is a line of high-speed DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) memory modules designed specifically for mobile and electronic devices. These modules are engineered to provide fast and reliable data access, which is crucial for performance in modern smartphones, tablets, and other portable electronics.
If you're working on projects that require high data throughput and low latency, such as advanced gaming consoles, high-resolution displays, or even AI-driven applications on mobile platforms, these modules are a go-to choice. They support faster data transfer rates and higher bandwidth compared to traditional DDR SDRAM, making them ideal for tasks that demand quick and efficient data handling.
One thing worth noting is that the H5MS1 series is optimized for power efficiency without compromising on speed. This makes them particularly attractive for battery-constrained devices where both performance and energy consumption are critical factors. Engineers tend to reach for this when they need to balance performance with power usage in their designs. Additionally, these modules often come with robust error correction capabilities, ensuring data integrity during high-speed operations, which is essential in many mobile and embedded systems.
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H5MS1 - Part List
5 parts in total| Mfr Part # | Quantity Available | Price | Category | Operating Temperature | Data Rate | Access Time | Memory Size | Voltage Rating | Voltage - Supply (Min) | Number of Bits per Element | Width | Height | Length | Mounting Type | Package Cooled | Size / Dimension | Number of Positions | Number of Cores/Bus Width | Manufacturer | Number of Words | Number of Addresses | Tariff No | Memory | Interface | Memory Type | Voltage - Supply (Vcc/Vdd) | Weight | Number of Pins | Package / Case | Material Finish | Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
H5MS1262EFP-E3 H5MS1262EFP-E3, DDR SDRAM Memory 128Mbit, 8M x 16 bit, 333MHz, 5ns, 1.8V, 60-Pin, FBGA Hynix | 1831 | 1: ¥32.0416 | - | +85 °C | 333MHz | 5ns | 128Mbit | 1.7 V | 1.95 V | 16bit | 8mm | 0.61mm | 10mm | Surface Mount | FBGA | 10 x 8 x 0.61mm | 60 | 16bit | 8M x 16 bit | 2M | 12bit | - | - | - | - | - | - | - | - | - | - |
H5MS1222EFP-E3 H5MS1222EFP-E3, DDR SDRAM Memory 128Mbit, 1M x 32 bit, 333MHz, 5ns, 1.8V, 90-Pin, FBGA Hynix | 1710 | 1: ¥34.3128 | - | +85 °C | 333MHz | 5ns | 128Mbit | 1.7 V | 1.95 V | 32bit | 8mm | 0.61mm | 13mm | Surface Mount | FBGA | 13 x 8 x 0.61mm | 90 | 32bit | 1M x 32 bit | 1M | 12bit | - | - | - | - | - | - | - | - | - | - |
| 10 | 1: ¥41.616 | - | :-30°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85423261 | :32M x 32bit | :LVCMOS | :DRAM - Synchronous | :1.8V | 0.000003 | :90 | :FBGA | :MSL 3 - 168 hours | :4096Byte | |
| 10 | 1: ¥70.38 | - | :-30°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85423261 | :64M x 16bit | :LVCMOS | :DRAM - Synchronous | :1.8V | 0.000003 | :60 | :FBGA | :MSL 3 - 168 hours | - | |
H5MS1222EFP-J3M HYNIX SEMICONDUCTOR | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |


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