ONEIC.US

H5MS1 Series

High-speed DDR SDRAM memory modules for mobile and electronic devices

The H5MS1 series from SK hynix is a line of high-speed DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) memory modules designed specifically for mobile and electronic devices. These modules are engineered to provide fast and reliable data access, which is crucial for performance in modern smartphones, tablets, and other portable electronics.

If you're working on projects that require high data throughput and low latency, such as advanced gaming consoles, high-resolution displays, or even AI-driven applications on mobile platforms, these modules are a go-to choice. They support faster data transfer rates and higher bandwidth compared to traditional DDR SDRAM, making them ideal for tasks that demand quick and efficient data handling.

One thing worth noting is that the H5MS1 series is optimized for power efficiency without compromising on speed. This makes them particularly attractive for battery-constrained devices where both performance and energy consumption are critical factors. Engineers tend to reach for this when they need to balance performance with power usage in their designs. Additionally, these modules often come with robust error correction capabilities, ensuring data integrity during high-speed operations, which is essential in many mobile and embedded systems.

Series Images (3)

Documents & Media

PDF Document
PDF Document

Frequently Asked Questions

Content generated by AI, for reference only
Loading...
03

H5MS1 - Part List

5 parts in total

Number of Bits per Element

Length

Size / Dimension

Number of Positions

Number of Cores/Bus Width

Manufacturer

Number of Words

Operating Temperature

Memory

Number of Pins

Mfr Part #Quantity AvailablePriceCategoryOperating TemperatureData RateAccess TimeMemory SizeVoltage RatingVoltage - Supply (Min)Number of Bits per ElementWidthHeightLengthMounting TypePackage CooledSize / DimensionNumber of PositionsNumber of Cores/Bus WidthManufacturerNumber of WordsNumber of AddressesTariff NoMemoryInterfaceMemory TypeVoltage - Supply (Vcc/Vdd)WeightNumber of PinsPackage / CaseMaterial FinishSize
H5MS1262EFP-E3
H5MS1262EFP-E3

H5MS1262EFP-E3, DDR SDRAM Memory 128Mbit, 8M x 16 bit, 333MHz, 5ns, 1.8V, 60-Pin, FBGA

Hynix

18311: ¥32.0416-+85 °C333MHz5ns128Mbit1.7 V1.95 V16bit8mm0.61mm10mmSurface MountFBGA10 x 8 x 0.61mm6016bit8M x 16 bit2M12bit----------
H5MS1222EFP-E3
H5MS1222EFP-E3

H5MS1222EFP-E3, DDR SDRAM Memory 128Mbit, 1M x 32 bit, 333MHz, 5ns, 1.8V, 90-Pin, FBGA

Hynix

17101: ¥34.3128-+85 °C333MHz5ns128Mbit1.7 V1.95 V32bit8mm0.61mm13mmSurface MountFBGA13 x 8 x 0.61mm9032bit1M x 32 bit1M12bit----------
H5MS1G22AFR-J3M
H5MS1G22AFR-J3M

SDRAM, MOBILE DDR, 1GB (X32), 90FBGA

HYNIX SEMICONDUCTOR

101: ¥41.616-:-30°C-----------------85423261:32M x 32bit:LVCMOS:DRAM - Synchronous:1.8V0.000003:90:FBGA:MSL 3 - 168 hours:4096Byte
H5MS1G62AFR-J3M
H5MS1G62AFR-J3M

SDRAM, MOBILE DDR, 1GB (X16), 60FBGA

HYNIX SEMICONDUCTOR

101: ¥70.38-:-30°C-----------------85423261:64M x 16bit:LVCMOS:DRAM - Synchronous:1.8V0.000003:60:FBGA:MSL 3 - 168 hours-
H5MS1222EFP-J3M
H5MS1222EFP-J3M

HYNIX SEMICONDUCTOR

0-----------------------------
Page 1 / 1
1