ONEIC.US
  1. Home
  2. Product Categories
  3. cigen-HI1005-1C1

HI1005-1C1 inductor surface mount Series

Compact multilayer ceramic RF inductors for high-frequency applications

The HI1005-1C1 inductor from Advanced Ceramic X Corporation is a compact multilayer ceramic RF inductor designed for high-frequency applications. If you're working on RF circuits that need to operate above a few GHz, these inductors are a great choice. They offer a small footprint and excellent electrical performance, making them ideal for space-constrained designs such as mobile devices, wireless routers, and other portable electronics.

One thing worth noting is their stability under varying temperatures. Engineers tend to reach for these inductors when they need to maintain consistent performance across a wide range of operating conditions. The multilayer ceramic construction ensures that the inductance remains stable even when the temperature fluctuates, which is crucial in many RF applications where temperature variations can significantly impact performance.

Another practical benefit is their ability to handle higher power levels compared to some other surface-mount inductors. This makes them suitable for applications where you need to transmit or receive signals with significant power, without worrying about excessive heating or degradation of the component. Overall, the HI1005-1C1 inductor is a reliable choice for anyone looking to integrate high-frequency components into their design while maintaining both size and performance constraints.

Documents & Media

PDF Document

Frequently Asked Questions

Content generated by AI, for reference only
Loading...
03

HI1005-1C1 inductor surface mount - Part List

6 parts in total

Inductance

Resistance - Initial (Ri) (Min)

Tolerance

Current Rating (Max)

Mfr Part #Quantity AvailablePriceCategoryQ @ FreqToleranceInductanceCurrent Rating (Max)Resistance - Initial (Ri) (Min)HeightCore MaterialPackage / CaseType
HI1005-1C1N5SMT
HI1005-1C1N5SMT

Ind RF Chip Multi-Layer 1.5nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz0.3 nH1.5 nH300 mA130 mOhm0.6 mmCeramic0402RF Chip
HI1005-1C1N8SMT
HI1005-1C1N8SMT

Ind RF Chip Multi-Layer 1.8nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz0.3 nH1.8 nH300 mA140 mOhm0.6 mmCeramic0402RF Chip
HI1005-1C15NJMT
HI1005-1C15NJMT

Ind RF Chip Multi-Layer 15nH 5% 100MHz 8Q-Factor Ceramic 250mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz5 %15 nH250 mA600 mOhm0.6 mmCeramic0402RF Chip
HI1005-1C10NJMT
HI1005-1C10NJMT

HH:130.00786.005 IND 0402 10NH J TOL Ind RF Chip Multi-Layer 10nH 5% 100MHz 8Q-Factor Ceramic 250mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz5 %10 nH250 mA450 mOhm0.6 mmCeramic0402RF Chip
HI1005-1C1N2SMT
HI1005-1C1N2SMT

Ind RF Chip Multi-Layer 1.2nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz0.3 nH1.2 nH300 mA120 mOhm0.6 mmCeramic0402RF Chip
HI1005-1C1N0SMT
HI1005-1C1N0SMT

Ind RF Chip Multi-Layer 1nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 T/R

advanced ceramic x corp.

0-8@100MHz0.3 nH1 nH300 mA120 mOhm0.6 mmCeramic0402RF Chip
Page 1 / 1
1