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PH1090 gp bjt Series
High-power RF bipolar transistors for various frequency applications
The PH1090 gp bjt series from M/A-COM is a high-power RF bipolar transistor designed for a wide range of frequency applications. These transistors are particularly useful in power amplifier stages, where they handle high RF power levels efficiently. If you're working on designs that require robust amplification in the RF domain, especially in the 1-10 GHz range, these devices are a solid choice.
One thing worth noting is their ability to maintain good linearity even under high power conditions. This makes them ideal for applications where you need to ensure clean, distortion-free signals. Engineers tend to reach for this when they need a reliable solution for boosting signal strength without introducing unwanted noise or distortion.
Another practical benefit is their thermal performance. The PH1090 gp bjt series is designed to dissipate heat effectively, which is crucial in high-power amplifiers where temperature management can significantly impact overall system performance. This is especially important in portable or compact systems where space is limited and heat dissipation needs to be managed carefully.
Overall, if you're designing RF systems that require high-power amplification, the PH1090 gp bjt series is definitely worth considering. Their robust design and performance make them a valuable addition to any engineer's toolkit in this field.
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PH1090 gp bjt - Part List
6 parts in total| Mfr Part # | Quantity Available | Price | Category | Other Names | Standard Package | Factory Pack Quantity | RoHS | Gain | Power - Max | Transistor Type | Voltage - Supply | Current - Collector (Ic) (Max) | Packaging | Mounting Type | Package / Case | Supplier Device Package | Type | Technology | Manufacturer | Voltage - Input (Min) | Power Dissipation (Max) | Rad Hardened | Power - Rated | Number of Elements | Voltage - Collector Emitter Breakdown (Max) | Number of Positions | Frequency | Power - Average Forward | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Configuration | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PH1090-175L Trans GP BJT NPN 80V 2-Pin Hermetic Metal TRANSISTOR,BIPOLAR 175W 1090MHZ Transistors RF Bipolar RF Bipolar Transistors m/a-com technology solutions | 18 | 1: ¥1,868.504 | - | 1465-1193 | Bulk | 10 | Lead free / RoHS Compliant | 8.58dB | 188W | NPN | 80V | 10.5A | * | * | * | * | NPN | Si | MACOM | 80 V | 375000 mW | - | - | - | - | - | - | - | - | - | - | - |
PH1090-550S Trans GP BJT NPN 80V 2-Pin Hermetic Metal TRANSISTOR,BIPOLAR 550W,1090MHZ Transistors RF Bipolar Trans GP BJT NPN 80V 3-Pin RF Bipolar Transistors m/a-com technology solutions | 10 | 10: ¥3,210.552 | - | 1465-1195 | Bulk | 10 | Lead free / RoHS Compliant | 8.06dB | 550W | NPN | 80V | 28A | * | * | * | * | NPN | Si | MACOM | 80 V | 1800000 mW | No | 1800 W | 1 | 3 V | 3 | - | - | - | - | - | - |
PH1090-350L Trans GP BJT NPN 80V 2-Pin Hermetic Metal TRANSISTOR,350W,1090MHZ Transistors RF Bipolar Trans GP BJT NPN 80V 3-Pin RF Bipolar Transistors m/a-com technology solutions | 10 | 1: ¥2,925.768 | - | 1465-1194 | Bulk | 1 | Lead free / RoHS Compliant | 8.32dB | 350W | NPN | 80V | 17A | * | * | * | * | NPN | Si | MACOM | 80 V | 750000 mW | No | 750 W | 1 | 3 V | 3 | 1.09 GHz | 875 W | 3 V | 17 A | Single | - 65 C |
PH1090-75L TRANSISTOR,75W,1030-1090MHZ Transistors RF Bipolar RF Bipolar Transistors M/A-Com Technology Solutions | 10 | 1: ¥1,445.00 | - | 1465-1196 | 6 | 10 | Lead free / RoHS Compliant | 10.70dB ~ 10.81dB | 75W | NPN | 70V | 6A | * | * | * | * | RF Bipolar Power | Si | MACOM | - | - | - | - | - | - | - | - | - | - | - | - | - |
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