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SSM6N15 transistor Series
Small signal N-channel MOSFETs for low-power electronic circuits
The SSM6N15 from Toshiba is a small signal N-channel MOSFET designed for low-power applications. These transistors are commonly found in circuits that require precise control and efficient switching, such as audio amplifiers, RF switches, and low-power logic circuits. If you're working on any project involving high-frequency signals or low-voltage operations, these transistors can be quite handy.
One thing worth noting is their excellent linearity and low noise characteristics, which make them ideal for audio applications where distortion needs to be minimized. Engineers tend to reach for this when they need a reliable switch with minimal impact on the signal quality. Additionally, their compact size and low power consumption mean they can be easily integrated into space-constrained designs without compromising performance.
Another practical aspect is their robustness under various operating conditions. They handle both low and high-frequency signals effectively, making them suitable for a wide range of applications. Whether you're dealing with sensitive analog signals or fast digital pulses, the SSM6N15 can handle it with ease.
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SSM6N15 transistor - Part List
8 parts in total| Mfr Part # | Quantity Available | Price | Category | Standard Package | Rds On (Max) @ Id, Vgs | Vce(on) (Max) @ Vge, Ic | Packaging | Mounting Type | Package / Case | Other Names | Factory Pack Quantity | RoHS | FET Type | Vgs (Max) | FET Feature | Power - Max | Power - Rated | Transistor Type | Number of Channels | Vgs(th) (Max) @ Id | Power - Average Forward | On-State Resistance (Max) | Drain to Source Voltage (Vdss) | Current - Drain (Idss) @ Vds (Vgs=0) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25degC | Height | Length | Mounting Style | Supplier Device Package | Series | Technology | Manufacturer | Product Category | Number of Elements | Voltage - Breakdown | Current - Peak Pulse (10/1000us) | Voltage - Gate Trigger (Vgt) (Max) | Number of Positions | Channel Type | Operating Temperature | Product | Standard Package Name | EU RoHS | Power Dissipation (Max) | Lead Style | Package Quantity | Configuration | Rad Hardened | Package Cooled | Type | Polarity |
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| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
SSM6N15FE(TE85L,F) Trans MOSFET N-CH 30V 0.1A 6-Pin ES T/R MOSFET N-CH DUAL 30V 0.1A ES6 MOSFET Dual N-ch 30V 0.1A toshiba | 3849 | 1: ¥3.196 | - | Tape & Reel | 4000@4V mOhm | 30 V | Tape and Reel | Surface Mount | 6ES | SSM6N15FE(TE85LF)CT | 4000 | Lead free / RoHS Compliant | 2 N-Channel (Dual) | ±20 V | Logic Level Gate | 150mW | 150 mW | N-Channel | 2 Channel | 1.5V @ 100µA | 150 mW | 4 Ohms | 30V | 0.1 A | 7.8pF @ 3V | 100mA | 0.55 mm | 1.6 mm | SMD/SMT | ES6 (1.6x1.6) | SSM6N15 | Si | Toshiba | MOSFET | 2 | 30 V | 0.1 A | +/- 20 V | 6 | Enhancement | -55 to 150 °C | MOSFET Small Signal | EMT | Compliant | 150 | Flat | ES | Dual | - | - | - | - |
| 0 | - | Tape & Reel | 4000@4V mOhm | 30 V | Tape and Reel | Surface Mount | 6US | - | - | - | - | ±20 V | - | - | 0.2 W | - | - | - | - | - | - | 0.1 A | - | - | - | - | - | - | - | - | - | - | 2 | 30 V | 0.1 A | - | 6 | Enhancement | -55 to 150 °C | - | - | - | - | - | - | - | No | US | Small Signal | N | ||
SSM6N15AFU,LF SIMILAR TO SSM6N15AFE,LM(A BUT MOSFET N CH 30V 100MA 2-2J1C MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS Toshiba | 3069 | 80: ¥0.6444 | - | 3,000 | 3.6 Ohm @ 10mA, 4V | 30 V | Tape & Reel (TR) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N15AFULFCT | 3000 | Lead free / RoHS Compliant | 2 N-Channel (Dual) | 20 V | Logic Level Gate | 300mW | 300 mW | N-Channel | 2 Channel | 1.5V @ 100µA | 300 mW | 3.6 Ohms | 30V | 100 mA | 13.5pF @ 3V | 100mA | 0.9 mm | 2 mm | SMD/SMT | US6 | SSM6N15 | Si | Toshiba | - | - | - | - | 20 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
SSM6N15AFE,LM X34 PB-F ES6 NCHX2 (LF) S-MOS MOSF N CH 30V 100MA ES6 MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD Toshiba | 4172 | 1: ¥3.604 | - | 4,000 | 3.6 Ohm @ 10mA, 4V | 30 V | Tape & Reel (TR) | Surface Mount | SOT-563, SOT-666 | SSM6N15AFELMCT | 4000 | Lead free / RoHS Compliant | MOSFET N-Channel, Metal Oxide | - | Logic Level Gate | 150mW | - | N-Channel | 2 Channel | 1.5V @ 100µA | 150 mW | 3.6 Ohms | 30V | - | 13.5pF @ 3V | 100mA (Ta) | 0.55 mm | 1.6 mm | SMD/SMT | ES6 | SSM6N15 | Si | Toshiba | MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
SSM6N15FU TOSHIBA | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
SSM6N15FU/DP TOSHIBA | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
SSM6N15FU(TE85R) TOSHIBA | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |


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