ONEIC.US

SSM6N15 transistor Series

Small signal N-channel MOSFETs for low-power electronic circuits

The SSM6N15 from Toshiba is a small signal N-channel MOSFET designed for low-power applications. These transistors are commonly found in circuits that require precise control and efficient switching, such as audio amplifiers, RF switches, and low-power logic circuits. If you're working on any project involving high-frequency signals or low-voltage operations, these transistors can be quite handy.

One thing worth noting is their excellent linearity and low noise characteristics, which make them ideal for audio applications where distortion needs to be minimized. Engineers tend to reach for this when they need a reliable switch with minimal impact on the signal quality. Additionally, their compact size and low power consumption mean they can be easily integrated into space-constrained designs without compromising performance.

Another practical aspect is their robustness under various operating conditions. They handle both low and high-frequency signals effectively, making them suitable for a wide range of applications. Whether you're dealing with sensitive analog signals or fast digital pulses, the SSM6N15 can handle it with ease.

Series Images (7)

Frequently Asked Questions

Content generated by AI, for reference only
Loading...
03

SSM6N15 transistor - Part List

8 parts in total

Package / Case

Other Names

Standard Package

Power - Rated

Supplier Device Package

Factory Pack Quantity

FET Type

Vgs (Max)

Power - Max

Rds On (Max) @ Id, Vgs

Power - Average Forward

On-State Resistance (Max)

Voltage - Gate Trigger (Vgt) (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC

Height

Length

Packaging

Mfr Part #Quantity AvailablePriceCategoryStandard PackageRds On (Max) @ Id, VgsVce(on) (Max) @ Vge, IcPackagingMounting TypePackage / CaseOther NamesFactory Pack QuantityRoHSFET TypeVgs (Max)FET FeaturePower - MaxPower - RatedTransistor TypeNumber of ChannelsVgs(th) (Max) @ IdPower - Average ForwardOn-State Resistance (Max)Drain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Input Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25degCHeightLengthMounting StyleSupplier Device PackageSeriesTechnologyManufacturerProduct CategoryNumber of ElementsVoltage - BreakdownCurrent - Peak Pulse (10/1000us)Voltage - Gate Trigger (Vgt) (Max)Number of PositionsChannel TypeOperating TemperatureProductStandard Package NameEU RoHSPower Dissipation (Max)Lead StylePackage QuantityConfigurationRad HardenedPackage CooledTypePolarity
SSM6N15FET5LAPE
SSM6N15FET5LAPE

SMALL SIGNAL MOSFET

toshiba

0--------------------------------------------------
SSM6N15FE(TE85L,F)
4
SSM6N15FE(TE85L,F)

Trans MOSFET N-CH 30V 0.1A 6-Pin ES T/R MOSFET N-CH DUAL 30V 0.1A ES6 MOSFET Dual N-ch 30V 0.1A

toshiba

38491: ¥3.196-Tape & Reel4000@4V mOhm30 VTape and ReelSurface Mount6ESSSM6N15FE(TE85LF)CT4000Lead free / RoHS Compliant2 N-Channel (Dual)±20 VLogic Level Gate150mW150 mWN-Channel2 Channel1.5V @ 100µA150 mW4 Ohms30V0.1 A7.8pF @ 3V100mA0.55 mm1.6 mmSMD/SMTES6 (1.6x1.6)SSM6N15SiToshibaMOSFET230 V0.1 A+/- 20 V6Enhancement-55 to 150 °CMOSFET Small SignalEMTCompliant150FlatESDual----
SSM6N15FU(TE85L,F)
SSM6N15FU(TE85L,F)

Trans MOSFET N-CH 30V 0.1A 6-Pin US T/R

toshiba

0-Tape & Reel4000@4V mOhm30 VTape and ReelSurface Mount6US----±20 V--0.2 W------0.1 A----------230 V0.1 A-6Enhancement-55 to 150 °C-------NoUSSmall SignalN
SSM6N15AFU,LF
2
SSM6N15AFU,LF

SIMILAR TO SSM6N15AFE,LM(A BUT MOSFET N CH 30V 100MA 2-2J1C MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS

Toshiba

306980: ¥0.6444-3,0003.6 Ohm @ 10mA, 4V30 VTape & Reel (TR)Surface Mount6-TSSOP, SC-88, SOT-363SSM6N15AFULFCT3000Lead free / RoHS Compliant2 N-Channel (Dual)20 VLogic Level Gate300mW300 mWN-Channel2 Channel1.5V @ 100µA300 mW3.6 Ohms30V100 mA13.5pF @ 3V100mA0.9 mm2 mmSMD/SMTUS6SSM6N15SiToshiba----20 V--------------
SSM6N15AFE,LM
2
SSM6N15AFE,LM

X34 PB-F ES6 NCHX2 (LF) S-MOS MOSF N CH 30V 100MA ES6 MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD

Toshiba

41721: ¥3.604-4,0003.6 Ohm @ 10mA, 4V30 VTape & Reel (TR)Surface MountSOT-563, SOT-666SSM6N15AFELMCT4000Lead free / RoHS CompliantMOSFET N-Channel, Metal Oxide-Logic Level Gate150mW-N-Channel2 Channel1.5V @ 100µA150 mW3.6 Ohms30V-13.5pF @ 3V100mA (Ta)0.55 mm1.6 mmSMD/SMTES6SSM6N15SiToshibaMOSFET------------------
SSM6N15FU
SSM6N15FU

TOSHIBA

0--------------------------------------------------
0--------------------------------------------------
0--------------------------------------------------
Page 1 / 1
1