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2N7002T-7-F

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FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Standard	Power - Max	150mW
Noise Figure	Not Required dB	Power - Rated	0.15 W
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Transistor Type	N-Channel	Delay to 1st Tap	11 ns
Number of Elements	1	Vgs(th) (Max) @ Id	2V @ 250µA
Voltage - Breakdown	60 V	Voltage - Threshold	:2V
Current Rating (Max)	:800mA	Resistance - RDS(On)	:13.5ohm
Contact Voltage (Max)	:60V	Rds On (Max) @ Id, Vgs	7500@5V mOhm
Power Dissipation (Max)	:150mW	Vce(on) (Max) @ Vge, Ic	60 V
Current Drain (Id) - Max	0.115 A	Power (Watts) - Per Port	0.15W
On-State Resistance (Max)	7.5 ohm	Voltage - Supply (Vcc/Vdd)	60V
Current Transfer Ratio (Min)	0.08 S	Switch Time (Ton, Toff) (Max)	7 ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	60V
Current - Peak Pulse (10/1000us)	0.115 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Common Mode Transient Immunity (Min)	Commercial	Current - Drain (Idss) @ Vds (Vgs=0)	0.115A
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V	Current - Continuous Drain (Id) @ 25degC	115mA (Ta)

Operating Temperature

-55 to 150 °C

PDF Document

PDF Document

Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.