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DMN2600UFB-7
| Category |
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Business
| Product | MOSFET Small Signal | Other Names | DMN2600UFB-7DI |
| Product Category | MOSFET | Standard Package | 3,000 |
| Factory Pack Quantity | 3000 | Standard Package Name | DFN |
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Vgs (Max) | ±8 |
| FET Feature | Logic Level Gate | Power - Max | 540mW |
| Transistor Type | N-Channel | Number of Channels | 2 Channel |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 1V @ 250µA |
| Voltage - Breakdown | 25 | Rds On (Max) @ Id, Vgs | 350 mOhm @ 200mA, 4.5V |
| Power Dissipation (Max) | 540 | Vce(on) (Max) @ Vge, Ic | 25 V |
| On-State Resistance (Max) | 600 mOhms | Gate Charge (Qg) (Max) @ Vgs | 0.85nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V | Current - Peak Pulse (10/1000us) | 1.3 |
| Input Capacitance (Ciss) (Max) @ Vds | 70.13pF @ 15V | Current - Continuous Drain (Id) @ 25degC | 1.3A (Ta) |
Mechanical
| Width | 0.6 | Packaging | Tape and Reel |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | 3-UFDFN | Length - Overall | 1 |
| Package Quantity | DFN | Number of Positions | 3 |
| Shell Size - Insert | 0.47 | Supplier Device Package | 3-DFN1006 (1.0x0.6) |
Product Info
| Series | DMN26 | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Diodes Incorporated |
| Configuration | Single with Gate Protection Diode | Printed Circuit Board | 3 |
Environmental
| Operating Temperature | 150 | ||
Documents & Media
PDF Document
PDF Document
Sourcing & traceability
- Datasheet
- DMN2600UFB
Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.