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DMN2016LHAB-7
| Category |
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Business
| MOQ | 3000 | Unit Pack | 3000 |
| Other Names | DMN2016LHAB-7DITR | Standard Package | 3,000 |
| Factory Pack Quantity | 3000 | ||
Compliance
| RoHS | Contains lead / RoHS Compliant | ||
Electrical
| FET Type | 2 N-Channel (Dual) | Vgs (Max) | 1.1V @ 250µA |
| FET Feature | Logic Level Gate | Power - Max | 1.2W |
| Transistor Type | N-Channel | Number of Channels | 2 Channel |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 4A, 4.5V |
| Vce(on) (Max) @ Vge, Ic | 20 V | On-State Resistance (Max) | 30 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V | Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V | Current - Continuous Drain (Id) @ 25degC | 7.5A |
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad | Supplier Device Package | * |
Product Info
| Series | DMN2016 | Technology | Si |
| Manufacturer | Diodes Incorporated | Configuration | Dual |