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DMN2250UFB-7B
| Category |
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Business
| MOQ | 10000 | Unit Pack | 10000 |
| Other Names | DMN2250UFB-7BDITR | Standard Package | 10,000 |
| Factory Pack Quantity | 10000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 25.4 ns |
| Vgs (Max) | 8 V | FET Feature | Logic Level Gate |
| Gate Charge | 3.1 nC | Power - Max | 500mW |
| Rise Time (Typ) | 6.1 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 59.4 ns | Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1V @ 250µA | Rds On (Max) @ Id, Vgs | 170 mOhm @ 1A, 4.5V |
| Power - Average Forward | 500 mW | Vce(on) (Max) @ Vge, Ic | 20 V |
| On-State Resistance (Max) | 170 mOhms | Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V | Input Capacitance (Ciss) (Max) @ Vds | 94pF @ 16V |
| Current - Continuous Drain (Id) @ 25degC | 1.35A (Ta) | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | 3-UFDFN |
| Supplier Device Package | 3-DFN1006 (1.0x0.6) | ||
Product Info
| Series | DMN22 | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Diodes Incorporated |
| Configuration | 1 N-Channel | ||
Environmental
| Operating Temperature | + 150 C | ||