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GA06JT12-247
| Manufacturer | |
| Description | TRANS SJT 1200V 6A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 230mO-6A |
| Category |
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Business
| Standard Package | 30 | Factory Pack Quantity | 30 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | Silicon Carbide, Normally Off | FET Feature | Super Junction |
| Power - Max | 146W | Power - Rated | 9 W |
| Transistor Type | N-Channel | Number of Channels | 1 Channel |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 6A | Power - Average Forward | 9 W |
| Vce(on) (Max) @ Vge, Ic | 1200 V | On-State Resistance (Max) | 220 mOhms |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | Current - Drain (Idss) @ Vds (Vgs=0) | 6 A |
| Current - Continuous Drain (Id) @ 25degC | 6A (Tc) (90°C) | ||
Mechanical
| Packaging | Tube | Mounting Type | Through Hole |
| Mounting Style | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB | ||
Product Info
| Series | GA06JT12 | Technology | SiC |
| Manufacturer | GeneSiC Semiconductor | Configuration | Single |
Environmental
| Operating Temperature | - 55 C | ||