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GES5816
| Manufacturer | |
| Description | Buy now, ships today. GES5816 - Bipolar (BJT) Transistor NPN 40 V 750 mA 120MHz 500 mW Through Hole TO-92-3 from Harris Corporation. View datasheets, pricing and availability from DigiKey now! |
| Category |
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Specifications
| Mfr | Harris Corporation | Series | - |
| Packaging | Bulk | Part Status | Active |
| Power - Max | 500 mW | Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | Transistor Type | NPN |
| Voltage - Supply | 40 V | Operating Temperature | -55°C ~ 135°C (TJ) |
| Frequency - Transition | 120MHz | Supplier Device Package | TO-92-3 |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA | Current - Collector (Ic) (Max) | 750 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2mA, 2V |