IRF512
| Category |
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Specifications
| Mfr | Harris Corporation | Grade | - |
| Series | - | FET Type | N-Channel |
| Packaging | Bulk | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 740mOhm @ 3.4A, 10V | Power Dissipation (Max) | 43W (Tc) |
| Supplier Device Package | TO-220 | Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V | Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 4.9A (Tc) |