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IRFH5302DTR2PBF
| Manufacturer | |
| Description | MOSFET N-CH 30V 29A 8VQFN Infineon HEXFET 系列 N沟道 MOSFET 晶体管 , 29 A, Vds=30 V, 8针 PQFN封装 |
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Electrical
| Delay Time - ON | 16 ns | Output Function | 增强 |
| Transistor Type | 单 | Delay Time - OFF | 20 ns |
| Voltage - Supply | 30 V | Number of Elements | 1 |
| Resistance - Input | 3 mΩ | Vgs(th) (Max) @ Id | 2.35V |
| Power Dissipation (Max) | 3600 mW | Gate Charge (Qg) (Max) @ Vgs | ±20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3635 pF @ 25 V | Current - Continuous Drain (Id) @ 25degC | 29 A |
Mechanical
| Width | 6mm | Height | 0.81mm |
| Length | 5mm | Mounting Type | 表面贴装 |
| Number of Pins | 8 | Package Quantity | PQFN |
| Size / Dimension | 5 x 6 x 0.81mm | ||
Product Info
| Series | HEXFET | Function | Y |
| Channel Type | N | Card Standard | 功率 MOSFET |
Environmental
| Operating Temperature | +150 °C | ||