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IRLR2908PBF
| Category |
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Business
| Factory Pack Quantity | 675 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 55 ns | Vgs (Max) | 16 V |
| Gate Charge | 22 nC | Delay Time - ON | 12 ns |
| Output Function | 增强 | Rise Time (Typ) | 95 ns |
| Transistor Type | Si | Delay Time - OFF | 36 ns |
| Delay to 1st Tap | 36 ns | Voltage - Supply | 80 V |
| Number of Channels | 1 Channel | Number of Elements | 1 |
| Resistance - Input | 28 mΩ | Vgs(th) (Max) @ Id | 2.5V |
| Power - Average Forward | 120 W | Power Dissipation (Max) | 120 W |
| Vce(on) (Max) @ Vge, Ic | 80 V | On-State Resistance (Max) | 28 mOhms |
| Current Transfer Ratio (Min) | 35 S | Gate Charge (Qg) (Max) @ Vgs | ±16 V |
| Switch Time (Ton, Toff) (Max) | 12 ns | Input Capacitance (Ciss) (Max) @ Vds | 1890 pF@ 25 V |
| Current - Continuous Drain (Id) @ 25degC | 39 A | ||
Mechanical
| Width | 2.39mm | Height | 6.22mm |
| Length | 6.73mm | Packaging | Tube |
| Mounting Type | 表面贴装 | Mounting Style | SMD/SMT |
| Number of Pins | 3 | Package / Case | TO-252-3 |
| Package Quantity | DPAK | Size / Dimension | 6.73 x 2.39 x 6.22mm |
Product Info
| Type | HEXFET Power MOSFET | Series | HEXFET |
| Function | Y | Technology | Si |
| Channel Type | N | Manufacturer | Infineon Technologies |
| Card Standard | 功率 MOSFET | Configuration | Single |
Environmental
| Operating Temperature | +175 °C | ||
Documents & Media
PDF Document
PDF Document
Sourcing & traceability
- Datasheet
- irlr2908pbf.pdf
Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.