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BC 850C E6327

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BC 850C E6327

Manufacturer
Description
Transistors Bipolar - BJT NPN 30 V 100 mA TRANSISTOR NPN AF 45V SOT-23 Infineon , NPN 晶体管, 0.1 A, Vce=50 V, HFE:110, 3针 SOT-23封装 Bipolar Transistors - BJT NPN 30 V 100 mA
Category
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Business

Other NamesBC850CE6327INCTPart # AliasesBC850CE6327HTSA1 SP000010563
Product CategoryTransistors Bipolar - BJTStandard Package3,000
Factory Pack Quantity3000

Compliance

RoHSLead free / RoHS Compliant

Electrical

Power - Max330mWTransistor TypeNPN
Voltage - Supply45VNumber of Elements1
Vce Saturation (Max)200 mVFrequency - Transition250MHz
Gain Bandwidth Product250 MHzPower - Average Forward330 mW
Power Dissipation (Max)330 mWVce(on) (Max) @ Vge, Ic50 V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mACurrent - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)0.1 AVoltage - Anode - Cathode (Vak)(Max)6 V
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V

Mechanical

Width1.3mmHeight0.9mm
Length2.9mmPackagingTape & Reel (TR)
Mounting TypeSurface MountMounting StyleSMD/SMT
Number of Pins3Package / CaseTO-236-3, SC-59, SOT-23-3
Package QuantitySOT-23Size / Dimension2.9 x 1.3 x 0.9mm
Supplier Device PackagePG-SOT23-3

Product Info

SeriesBC850ManufacturerInfineon Technologies
ConfigurationSingle

Environmental

Operating Temperature- 65 C