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BSC011N03LSI
| Manufacturer | |
| Description | MOSFET N-CH 30V 37A TDSON-8 Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS |
| Category |
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Business
| Other Names | BSC011N03LSICT | Standard Package | 5,000 |
| Factory Pack Quantity | 5000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 6.2 ns |
| Vgs (Max) | 20 V | FET Feature | Logic Level Gate |
| Gate Charge | 90 nC | Power - Max | 96W |
| Delay Time - ON | 6.4 ns | Output Function | 增强 |
| Rise Time (Typ) | 9.2 ns | Transistor Type | Si |
| Delay Time - OFF | 35 ns | Delay to 1st Tap | 35 ns |
| Voltage - Supply | 0.56V | Number of Channels | 1 Channel |
| Number of Elements | 1 | Resistance - Input | 0.0014 Ω |
| Vgs(th) (Max) @ Id | 2V @ 250µA | Rds On (Max) @ Id, Vgs | 1.1 mOhm @ 30A, 10V |
| Power - Average Forward | 96 W | Power Dissipation (Max) | 96 W |
| Vce(on) (Max) @ Vge, Ic | 30 V | On-State Resistance (Max) | 900 uOhms |
| Current Transfer Ratio (Min) | 160s | Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Switch Time (Ton, Toff) (Max) | 6.4 ns | Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 15V | Current - Continuous Drain (Id) @ 25degC | 37A (Ta), 100A (Tc) |
Mechanical
| Width | 5.35mm | Height | 1.1mm |
| Length | 6.1mm | Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Number of Pins | 8 | Package / Case | 8-PowerTDFN |
| Package Quantity | TDSON | Size / Dimension | 6.1 x 5.35 x 1.1mm |
| Supplier Device Package | PG-TDSON-8 | ||
Product Info
| Series | BSC011N03 | Function | Y |
| Technology | Si | Channel Type | N |
| Manufacturer | Infineon Technologies | Card Standard | 功率 MOSFET |
| Configuration | 1 N-Channel | ||
Environmental
| Operating Temperature | +150 °C | ||