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Business
| Product | IGBT Silicon Modules | ||
Compliance
| RoHS | Compliant | ||
Electrical
| Vgs (Max) | ±20 V | Power - Rated | 2250 W |
| Transistor Type | 串行 | Voltage - Supply | 1200 V |
| Vce Saturation (Max) | 2.1 V | Voltage - Input (Min) | 1200 V |
| Power - Average Forward | 2250 W | Power Dissipation (Max) | 2250 W |
| Gate Charge (Qg) (Max) @ Vgs | 400 nA | Current - Collector Cutoff (Max) | 675 A |
| Voltage - Gate Trigger (Vgt) (Max) | ±20V | Current - Continuous Drain (Id) @ 25degC | 675 A |
Mechanical
| Width | 62mm | Height | 20.8mm |
| Length | 152.1mm | Mounting Type | Screw |
| Mounting Style | Screw | Number of Pins | 11 |
| Package Quantity | 62MM | Size / Dimension | 152.1 x 62 x 20.8mm |
| Number of Positions | 11 | ||
Product Info
| Function | Y | Channel Type | N |
| Manufacturer | Infineon Technologies | Configuration | Dual |
| Channels per IC | 串行 | ||
Environmental
| Operating Temperature | +150 °C | ||
Documents & Media
PDF Document
Sourcing & traceability
- Datasheet
- infineon_FF450R12ME4.pdf
Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.