ONEIC.US
IXFH12N100

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Business

TradenameHyperFETProduct CategoryMOSFET
Standard Package30Factory Pack Quantity30
Standard Package NameTO-247-AD

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Rad HardenedNo

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time32 ns
Vgs (Max)�20 VFET FeatureStandard
Power - Max300WPower - Rated300 W
Rise Time (Typ)33 nsTransistor TypeN-Channel
Delay to 1st Tap62 nsNumber of Channels1 Channel
Number of Elements1Vgs(th) (Max) @ Id4.5V @ 4mA
Voltage - Breakdown1000Rds On (Max) @ Id, Vgs1.05 Ohm @ 6A, 10V
Power - Average Forward300 WPower Dissipation (Max)300000
Vce(on) (Max) @ Vge, Ic1000 VOn-State Resistance (Max)1.05 ohm
Current Transfer Ratio (Min)10 sGate Charge (Qg) (Max) @ Vgs155nC @ 10V
Switch Time (Ton, Toff) (Max)21 nsDrain to Source Voltage (Vdss)1000V (1kV)
Current - Peak Pulse (10/1000us)12Voltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)12 AInput Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
Current - Continuous Drain (Id) @ 25degC12A (Tc)

Mechanical

Width5.3 mmHeight21.46 mm
Length16.26 mmWeight0.229281 oz
PackagingTubeTab WidthTab
Lead StyleThrough HoleMounting TypeThrough Hole
Mounting StyleThrough HolePackage / CaseTO-247-3
Package CooledTO-247ADLength - Overall16.26(Max)
Package QuantityTO-247ADNumber of Positions3
Shell Size - Insert21.46(Max)Supplier Device PackageTO-247AD

Product Info

TypePower MOSFETSeriesIXFH12N100
PolarityNTechnologySi
Channel TypeNManufacturerIXYS
ConfigurationSinglePrinted Circuit Board3

Environmental

Operating Temperature+ 150 C

Documents & Media

PDF Document

Sourcing & traceability

Datasheet
91531.pdf

Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.