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IXFK360N15T2
| Category |
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Business
| Product | MOSFET Gate Drivers | Tradename | TrenchT2 GigaMOS |
| Standard Package | 25 | Factory Pack Quantity | 25 |
Compliance
| RoHS | RoHS Compliant | EU RoHS | Compliant |
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 265 ns |
| Vgs (Max) | ±20 | FET Feature | Standard |
| Power - Max | 1670W | Voltage Rating | 150 V |
| Delay Time - ON | 50 ns | Rise Time (Typ) | 170 ns |
| Current - Output | 100 A | Current - Supply | 100 A |
| Delay Time - OFF | 115 ns | Number of Outputs | 1 |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 5V @ 8mA |
| Voltage - Breakdown | 150 | Rds On (Max) @ Id, Vgs | 4 mOhm @ 60A, 10V |
| Power - Average Forward | 1670 W | Power Dissipation (Max) | 1670 W |
| On-State Resistance (Max) | 4@10V | Gate Charge (Qg) (Max) @ Vgs | 715nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V | Current - Peak Pulse (10/1000us) | 360 |
| Input Capacitance (Ciss) (Max) @ Vds | 47500pF @ 25V | Current - Continuous Drain (Id) @ 25degC | 360A (Tc) |
Mechanical
| Width | 5.13(Max) | Packaging | Tube |
| Tab Width | Tab | Mounting Type | Through Hole |
| Mounting Style | Through Hole | Package / Case | TO-264 |
| Length - Overall | 19.96(Max) | Package Quantity | TO-264 |
| Number of Positions | 3 | Shell Size - Insert | 26.16(Max) |
| Supplier Device Package | TO-264 | ||
Product Info
| Type | GigaMOS Trench T2 HiperFet | Series | IXFK360N15 |
| Channel Type | Enhancement | Manufacturer | IXYS |
| Number of Drivers | Single | Printed Circuit Board | 3 |
Environmental
| Operating Temperature | + 175 C | ||
Documents & Media
PDF Document
Sourcing & traceability
- Datasheet
- DS100181%28IXFK-FX360N15T2%29.pdf
Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.