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Business

TradenameHiPerFETProduct CategoryMOSFET
Standard Package50Factory Pack Quantity50
Standard Package NameTO-220

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time21 ns
Vgs (Max)±30 VFET FeatureStandard
Power - Max200WPower - Rated200 W
Delay Time - ON23 nsOutput Function增强
Rise Time (Typ)27 nsTransistor TypeN-Channel
Delay Time - OFF65 nsDelay to 1st Tap65 ns
Voltage - Supply600 VNumber of Channels1 Channel
Number of Elements1Resistance - Input740 mΩ
Vgs(th) (Max) @ Id5.5V @ 1mAVoltage - Breakdown600 V
Rds On (Max) @ Id, Vgs740 mOhm @ 5A, 10VPower - Average Forward200 W
Power Dissipation (Max)200 WVce(on) (Max) @ Vge, Ic600 V
On-State Resistance (Max)0.74 ΩCurrent Transfer Ratio (Min)11 s
Gate Charge (Qg) (Max) @ Vgs32nC @ 10VSwitch Time (Ton, Toff) (Max)23 ns
Drain to Source Voltage (Vdss)600VCurrent - Peak Pulse (10/1000us)10 A
Voltage - Gate Trigger (Vgt) (Max)+/- 30 VCurrent - Drain (Idss) @ Vds (Vgs=0)10 A
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 25VCurrent - Continuous Drain (Id) @ 25degC10A (Tc)

Mechanical

Width4.83mmHeight9.15mm
Length10.66mmWeight0.081130 oz
PackagingTubeTab WidthTab
Lead StyleThrough HoleMounting TypeThrough Hole
Mounting StyleThrough HoleNumber of Pins3
Package / CaseTO-220-3Package CooledTO-220
Length - Overall10.66(Max)Package QuantityTO-220
Size / Dimension10.66 x 4.83 x 9.15mmNumber of Positions3
Shell Size - Insert9.15(Max)Supplier Device PackageTO-220

Product Info

SeriesIXFP10N60TechnologySi
Channel TypeNManufacturerIXYS
Card StandardPower MOSFETConfigurationSingle
Printed Circuit Board3

Environmental

Operating Temperature+150 °C

Documents & Media

PDF Document

Sourcing & traceability

Datasheet
99424.pdf

Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.