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IXTP02N50D
| Category |
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Business
| Standard Package | 50 | Factory Pack Quantity | 50 |
| Standard Package Name | TO-220AD | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 45 ns |
| Vgs (Max) | 20 V | FET Feature | Depletion Mode |
| Power - Max | 1.1W | Power - Rated | 25 W |
| Rise Time (Typ) | 4 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 28 ns | Number of Channels | 1 Channel |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 5V @ 25µA |
| Voltage - Breakdown | 500 | Rds On (Max) @ Id, Vgs | 30 Ohm @ 50mA, 0V |
| Power - Average Forward | 25 W | Power Dissipation (Max) | 1100 |
| Vce(on) (Max) @ Vge, Ic | 500 V | On-State Resistance (Max) | 30 Ohms |
| Switch Time (Ton, Toff) (Max) | 9 ns | Drain to Source Voltage (Vdss) | 500V |
| Current - Peak Pulse (10/1000us) | 0.2 | Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 0.2 A | Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
| Current - Continuous Drain (Id) @ 25degC | 200mA (Tc) | ||
Mechanical
| Width | 4.83 mm | Height | 9.15 mm |
| Length | 10.66 mm | Weight | 0.194007 oz |
| Packaging | Tube | Tab Width | Tab |
| Mounting Type | Through Hole | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Length - Overall | 10.66(Max) |
| Package Quantity | TO-220AD | Number of Positions | 3 |
| Shell Size - Insert | 9.15(Max) | Supplier Device Package | TO-220 |
Product Info
| Series | IXTP02N50 | Technology | Si |
| Channel Type | Depletion | Manufacturer | IXYS |
| Configuration | Single | Printed Circuit Board | 3 |
Environmental
| Operating Temperature | - 55 C | ||
Documents & Media
PDF Document
PDF Document
Similar Parts
Sourcing & traceability
- Datasheet
- IXT(P,U,Y)02N50D
Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.