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R6507ENXC7G
| Manufacturer | |
| Description | . R6507ENXC7G - N-Channel 650 V 7A (Ta) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! |
| Category |
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Specifications
| Mfr | Rohm Semiconductor | Grade | - |
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4V @ 200µA | Base Product Number | R6507 |
| Operating Temperature | 150°C (TJ) | Rds On (Max) @ Id, Vgs | 665mOhm @ 2.4A, 10V |
| Power Dissipation (Max) | 46W (Tc) | Supplier Device Package | TO-220FM |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25degC | 7A (Ta) | ||