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RUL035N02TR

Manufacturer	ROHM Co., Ltd.
Description	Trans MOSFET N-CH 20V 3.5A 6-Pin TUMT T/R Transistor MOSFET N-CH 20V 3.5A TUMT6 MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 3.5A ROHM N沟道 Si MOSFET , 3.5 A, Vds=20 V, 6针 TUMT封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS

Lead free / RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	50 ns
Vgs (Max)	±10 V	FET Feature	Logic Level Gate, 1.5V Drive
Gate Charge	5.7 nC	Power - Max	1W
Power - Rated	1 W	Delay Time - ON	10 ns
Fall Time (Typ)	50 ns	Output Function	增强
Rise Time (Typ)	20 ns	Transistor Type	N-Channel
Delay Time - OFF	40 ns	Delay to 1st Tap	40 ns
Voltage - Supply	20 V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	93 mΩ
Vgs(th) (Max) @ Id	1V @ 1mA	Voltage - Breakdown	20 V
Rds On (Max) @ Id, Vgs	43@4.5V mOhm	Power - Average Forward	1 W
Power Dissipation (Max)	1 W	Propagation Delay (Max)	20 ns
Vce(on) (Max) @ Vge, Ic	20 V	On-State Resistance (Max)	31 mOhms
Current Transfer Ratio (Min)	3.2 S	Gate Charge (Qg) (Max) @ Vgs	5.7nC @ 4.5V
Switch Time (Ton, Toff) (Max)	10 ns	Drain to Source Voltage (Vdss)	20V
Current - Peak Pulse (10/1000us)	3.5 A	Voltage - Gate Trigger (Vgt) (Max)	10 V
Current - Drain (Idss) @ Vds (Vgs=0)	3.5 A	Input Capacitance (Ciss) (Max) @ Vds	460pF @ 10V
Current - Continuous Drain (Id) @ 25degC	3.5A (Ta)

Operating Temperature

-55 to 150 °C

PDF Document

Rohm Semiconductor

KIT MOSFET 5EA OF 16 VALUES