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Electrical

Vgs (Max)±20VPower - Max54mJ
Transistor TypeIGBTSwitching Energy28mJ
Voltage - Supply1200VResistance @ 25degC0.075K/W
Voltage - Threshold5.5V(Typ.)Rise / Fall Time (Typ)70ns
Vce Saturation (Max) @ Ib, Ic2.5VCurrent - Collector (Ic) (Max)300A

Mechanical

Package / CaseD56Primary MaterialSi

Product Info

TypeStandardPolarityN-Channel
Other Specifications18nF

Environmental

Operating Temperature–40to+150°C