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STF13NM60N

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube N-CH 600V 11A 360mOhm TO220FP MOSFET N-CH 600V 11A TO-220FP STF13NM60N, N-channel MOSFET Transistor, 11A 600V, 3-Pin TO-220FP MOSFET N-CH 600V 11A MDMESH Power MDmesh Trans MOSFET N-CH 600V 11A 3-Pin (3+Tab) TO-220FP T/R STMicroelectronics , N沟道 MOSFET, 11 A, Vds=600 V, 3针 TO-220FP封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Automotive	NO	Leadfree Defin	RoHS-conform

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	10 ns
Vgs (Max)	±25 V	Logic Type	NO
FET Feature	Standard	Power - Max	25W
Power - Rated	25 W	Fall Time (Typ)	10 ns
Rise Time (Typ)	8 ns	Transistor Type	N-Channel
Delay to 1st Tap	30 ns	Number of Elements	1
Vgs(th) (Max) @ Id	4V @ 250µA	Voltage - Breakdown	650 V
Rds On (Max) @ Id, Vgs	360@10V mOhm	Power Dissipation (Max)	25 W
Propagation Delay (Max)	8 ns	Vce(on) (Max) @ Vge, Ic	600 V
Power (Watts) - Per Port	25W	On-State Resistance (Max)	0.36 Ω
Voltage - Supply (Vcc/Vdd)	600V	Gate Charge (Qg) (Max) @ Vgs	30nC
Switch Time (Ton, Toff) (Max)	3 ns	Drain to Source Voltage (Vdss)	600V
Current - Peak Pulse (10/1000us)	11 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 25 V
Current - Drain (Idss) @ Vds (Vgs=0)	11A	Input Capacitance (Ciss) (Max) @ Vds	790pF @ 50V
Current - Continuous Drain (Id) @ 25degC	11A (Tc)

Operating Temperature

-55 to 150 °C

Thermal Resistance @ GPM

5K/W

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