| Mfr | Taiwan Semiconductor Corporation | Grade | - |
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Vgs(th) (Max) @ Id | 5V @ 1mA | Base Product Number | TSM60 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| Power Dissipation (Max) | 39W (Tc) | Supplier Device Package | TO-251 (IPAK) |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V | Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 242 pF @ 25 V | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25degC | 3A (Tc) | |
