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CSD17304Q3

Business

RoHS	Contains lead / RoHS compliant by exemption	EU RoHS	Compliant
Part Status	ACTIVE	Rad Hardened	No

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	3.1 ns
Vgs (Max)	10 V	FET Feature	Logic Level Gate
Gate Charge	5.1 nC	Power - Max	2.7W
Noise Figure	Not Required dB	Power - Rated	2.7 W
Power - Output	Not Required dB	Fall Time (Typ)	3.1 ns
Frequency - Max	Not Required MHz	Rise Time (Typ)	9.1 ns
Transistor Type	N-Channel	Delay to 1st Tap	10.4 ns
Number of Channels	1 Channel	Number of Elements	1
Vgs(th) (Max) @ Id	1.8V @ 250µA	Voltage - Breakdown	30 V
Current Rating (Max)	Catalog	Rds On (Max) @ Id, Vgs	7.5@8V mOhm
Power - Average Forward	2.7 W	Power Dissipation (Max)	2700
Propagation Delay (Max)	9.1 ns	Vce(on) (Max) @ Vge, Ic	30 V
Current Drain (Id) - Max	15 A	Logic Voltage - VIL, VIH	Yes
On-State Resistance (Max)	8.8 mOhms	Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 4.5V
Current - Peak Pulse (8/20us)	88	Switch Time (Ton, Toff) (Max)	5.1 ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	30V
Current - Peak Pulse (10/1000us)	15 A	Voltage - Gate Trigger (Vgt) (Max)	- 8 V, + 10 V
Current - Drain (Idss) @ Vds (Vgs=0)	15 A	Input Capacitance (Ciss) (Max) @ Vds	955pF @ 15V
Current - Continuous Drain (Id) @ 25degC	15A (Ta), 56A (Tc)