TK065Z65Z,S1F
| Manufacturer | |
| Description | . TK065Z65Z,S1F - N-Channel 650 V 38A (Ta) 270W (Tc) Through Hole TO-247-4L(T) from Toshiba Semiconductor and Storage. from now! |
| Category |
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Specifications
| Mfr | Toshiba Semiconductor and Storage | Grade | - |
| Series | DTMOSVI | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-247-4 |
| Vgs(th) (Max) @ Id | 4V @ 1.69mA | Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 19A, 10V | Power Dissipation (Max) | 270W (Tc) |
| Supplier Device Package | TO-247-4L(T) | Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V | Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 38A (Ta) |