No Image
TK155E65Z,S1X
| Manufacturer | |
| Description | . TK155E65Z,S1X - N-Channel 650 V 18A (Ta) 150W (Tc) Through Hole TO-220 from Toshiba Semiconductor and Storage. from now! |
| Category |
对参数有疑问？问 AI 助手
Specifications
| Mfr | Toshiba Semiconductor and Storage | Grade | - |
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 730µA | Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 9A, 10V | Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | TO-220 | Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V | Input Capacitance (Ciss) (Max) @ Vds | 1635 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 18A (Ta) |