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TK3A90E,S4X
| Manufacturer | |
| Description | . TK3A90E,S4X - N-Channel 900 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS from Toshiba Semiconductor and Storage. from now! |
| Category |
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Specifications
| Mfr | Toshiba Semiconductor and Storage | Grade | - |
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Through Hole |
| Qualification | - | Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 4.6Ohm @ 1.3A, 10V | Power Dissipation (Max) | 35W (Tc) |
| Supplier Device Package | TO-220SIS | Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 900 V | Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 2.5A (Ta) |