TPN1200APL,L1Q
| Manufacturer | |
| Description | . TPN1200APL,L1Q - N-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1) from Toshiba Semiconductor and Storage. from now! |
| Category |
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Specifications
| Mfr | Toshiba Semiconductor and Storage | Grade | - |
| Series | U-MOSIX-H | FET Type | N-Channel |
| Packaging | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | FET Feature | - |
| Part Status | Active | Mounting Type | Surface Mount |
| Qualification | - | Package / Case | 8-PowerVDFN |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA | Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V | Power Dissipation (Max) | 630mW (Ta), 104W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) | Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V | Input Capacitance (Ciss) (Max) @ Vds | 1855 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Current - Continuous Drain (Id) @ 25degC | 40A (Tc) |