ONEIC.US
2SK3176(F)

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Business

Product CategoryMOSFETStandard PackageBulk
Factory Pack Quantity50

Compliance

RoHSLead free / RoHS Compliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time25 ns
Vgs (Max)±20 VFET FeatureLogic Level Gate
Power - Max150WPower - Rated150 W
Fall Time (Typ)25 nsOutput Function增强
Rise Time (Typ)15 nsTransistor TypeN-Channel
Voltage - Supply200 VNumber of Channels1 Channel
Number of Elements1Resistance - Input0.052 Ω
Vgs(th) (Max) @ Id3.5V @ 1mAVoltage - Breakdown200 V
Rds On (Max) @ Id, Vgs52@10V mOhmPower - Average Forward150 W
Power Dissipation (Max)150 WPropagation Delay (Max)15 ns
Vce(on) (Max) @ Vge, Ic200 VOn-State Resistance (Max)0.052 Ω
Gate Charge (Qg) (Max) @ Vgs125nC @ 10VDrain to Source Voltage (Vdss)200V
Current - Peak Pulse (10/1000us)30 AVoltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)30 AInput Capacitance (Ciss) (Max) @ Vds5400pF @ 10V
Current - Continuous Drain (Id) @ 25degC30A (Ta)

Mechanical

Width4.8mmHeight19mm
Length15.9mmPackagingTube
Mounting TypeThrough HoleMounting StyleThrough Hole
Number of Pins3Package / Case3TO-3PN
Package CooledTO-3PNPackage QuantityTO-3PN
Size / Dimension15.9 x 4.8 x 19mmNumber of Positions3
Supplier Device PackageTO-3P(N)

Product Info

Series2SK3176FunctionY
TechnologySiChannel TypeEnhancement
ManufacturerToshibaCard StandardPower MOSFET
ConfigurationSingle

Environmental

Operating Temperature-55 to 150 °C

Documents & Media

PDF Document
PDF Document
PDF Document

Sourcing & traceability

Datasheet
2SK3176

Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.