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Product CategoryMOSFETStandard Package50

Compliance

RoHSRoHS CompliantSVHC:No SVHC (20-Jun-2013)
Tariff No85412900

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time30 ns
Vgs (Max):10VFET FeatureStandard
Gate Charge12 nCPower - Max40W
Power - Rated40 WRise Time (Typ)20 ns
Transistor TypeN-ChannelVgs(th) (Max) @ Id4V @ 1mA
Voltage - Threshold:4VCurrent Rating (Max):2.5A
Resistance - RDS(On):6.4ohmContact Voltage (Max):900V
Rds On (Max) @ Id, Vgs6.4 Ohm @ 1.5A, 10VPower Dissipation (Max):40W
Vce(on) (Max) @ Vge, Ic900 VCurrent Transfer Ratio (Min)2 S
Gate Charge (Qg) (Max) @ Vgs12nC @ 10VCurrent - Peak Pulse (8/20us):7.5A
Drain to Source Voltage (Vdss)900VVoltage - Gate Trigger (Vgt) (Max)30 V
Current - Drain (Idss) @ Vds (Vgs=0)2.5 AInput Capacitance (Ciss) (Max) @ Vds470pF @ 25V
Current - Continuous Drain (Id) @ 25degC2.5A (Ta)

Mechanical

Weight0.0017PackagingTube
Termination:Through HoleMounting TypeThrough Hole
Mounting StyleThrough HoleNumber of Pins:3
Package / CaseTO-220-3 Full PackMaterial Finish:-
Supplier Device PackageTO-220SIS

Product Info

ConfigurationSingle

Environmental

Operating Temperature- 55 C

Documents & Media

PDF Document
Online Document
Online Document
PDF Document

Sourcing & traceability

Datasheet
Datasheets

Lot-level traceability (date code, original factory packaging) is confirmed on every quote and shipment.