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Electrical
| Vgs (Max) | ±30 V | Number of Elements | 1 |
| Voltage - Breakdown | 600 V | Power Dissipation (Max) | 20 W |
| On-State Resistance (Max) | 2.2 Ω | Gate Charge (Qg) (Max) @ Vgs | 15 nC V @ 10 |
| Current - Peak Pulse (10/1000us) | 3 A | Input Capacitance (Ciss) (Max) @ Vds | 600 pF V @ 25 |
Mechanical
| Width | 2.3mm | Height | 5.5mm |
| Length | 6.5mm | Mounting Type | Through Hole |
| Package Cooled | PW Mold2 | Size / Dimension | 6.5 x 2.3 x 5.5mm |
| Number of Positions | 3 | ||
Product Info
| Channel Type | Enhancement | Card Standard | Power MOSFET |
| Configuration | Single | ||
Environmental
| Operating Temperature | +150 °C | ||