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SSM3J118TU(TE85L)

Manufacturer	Toshiba Corporation
Description	MOSFET Vds=-30V Id=-1.4A 3Pin MOSF 30V 1.4A UFM MOSFET P-CH 30V 1.4A UFM
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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RoHS

Lead free / RoHS Compliant

FET Type	MOSFET P-Channel, Metal Oxide	Vgs (Max)	20 V
FET Feature	Logic Level Gate, 4V Drive	Power - Max	800mW
Power - Rated	800 mW	Transistor Type	P-Channel
Number of Channels	1 Channel	Rds On (Max) @ Id, Vgs	240 mOhm @ 650mA, 10V
Power - Average Forward	800 mW	Vce(on) (Max) @ Vge, Ic	- 30 V
On-State Resistance (Max)	360 mOhms	Current Transfer Ratio (Min)	1.5 S / 0.8 S
Drain to Source Voltage (Vdss)	30V	Current - Drain (Idss) @ Vds (Vgs=0)	- 1.4 A
Input Capacitance (Ciss) (Max) @ Vds	137pF @ 15V	Current - Continuous Drain (Id) @ 25degC	1.4A (Ta)

Operating Temperature

+ 150 C

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