| FET Type | N and P-Channel | Fall Time | 16 ns at N Channel, 25 ns at P Channel |
| Vgs (Max) | ±12@N Channel|±8@P Channel V | FET Feature | Logic Level Gate |
| Power - Max | 270mW | Power - Rated | 270 mW |
| Rise Time (Typ) | 16 ns at N Channel, 25 ns at P Channel | Transistor Type | N and P-Channel |
| Delay to 1st Tap | 10 ns | Number of Elements | 2 |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | Voltage - Breakdown | 20@N Channel|8@P Channel V |
| Voltage - Threshold | :600mV | Resistance - RDS(On) | :0.32ohm |
| Rds On (Max) @ Id, Vgs | 385@4.5V@N Channel|600@4.5V@P Channel mOhm | Power Dissipation (Max) | :270mW |
| Propagation Delay (Max) | 16@N Channel|25@P Channel ns | Vce(on) (Max) @ Vge, Ic | + 20 V, - 8 V |
| On-State Resistance (Max) | 385@4.5V@N Channel|600@4.5V@P Cha... | Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| Switch Time (Ton, Toff) (Max) | 10@N Channel|6@P Channel ns | Drain to Source Voltage (Vdss) | 20V, 8V |
| Current - Peak Pulse (10/1000us) | 0.66@N Channel|0.57@P Channel A | Voltage - Gate Trigger (Vgt) (Max) | +/- 12 V, +/- 8 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 0.7 A, 0.6 A | Current - Continuous Drain (Id) @ 25degC | 660mA, 570mA |
