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SI4816BDY-T1-GE3
| Manufacturer | |
| Description | Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R MOSFET DL N-CH 30V 6.8A 8-SOIC MOSFET, NN CH, 30V, 8SOIC MOSFET Dua lN-Ch w/Schottky 30V 18.5/11.5mohm |
| Category |
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Business
| Other Names | SI4816BDY-T1-GE3CT | Standard Package | Tape & Reel |
Compliance
| RoHS | Lead free / RoHS Compliant | Tariff No | 85412900 |
| Rad Hardened | No | ||
Electrical
| FET Type | 2 N-Channel (Dual) | Vgs (Max) | 20 V |
| FET Feature | Logic Level Gate | Power - Max | 1W, 1.25W |
| Fall Time (Typ) | 9@Channel 1|11@Channel 2 ns | Transistor Type | :Dual N Channel |
| Delay to 1st Tap | 24@Channel 1|31@Channel 2 ns | Number of Elements | 2 |
| Vgs(th) (Max) @ Id | 3V @ 250µA | Voltage - Breakdown | 30 V |
| Voltage - Threshold | :3V | Resistance - RDS(On) | :0.0155ohm |
| Rds On (Max) @ Id, Vgs | 18.5@10V@Channel 1|11.5@10V@Channel 2 mOhm | Power Dissipation (Max) | :1W |
| Propagation Delay (Max) | 9 ns | Vce(on) (Max) @ Vge, Ic | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V | Switch Time (Ton, Toff) (Max) | 11@Channel 1|13@Channel 2 ns |
| Drain to Source Voltage (Vdss) | 30V | Current - Peak Pulse (10/1000us) | 5.8@Channel 1|8.2@Channel 2 A |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5.8/8.2 A | Current - Continuous Drain (Id) @ 25degC | 5.8A, 8.2A |
Mechanical
| Weight | 0.0005 | Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Number of Pins | :8 |
| Package / Case | 8SOIC N | Package Cooled | SOIC N |
| Material Finish | :MSL 1 - Unlimited | Number of Positions | 8 |
| Supplier Device Package | 8-SOIC N | ||
Product Info
| Type | Power MOSFET | Polarity | N |
| Channel Type | Enhancement | ||
Environmental
| Operating Temperature | -55 to 150 °C | ||
Documents & Media
PDF Document
PDF Document