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SI7370DP-T1-E3

Business

MOQ	1	Unit Pack	0
Other Names	SI7370DP-T1-E3CT	Standard Package	Tape & Reel

RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Tariff No	85412900

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	1.9W
Delay Time - ON	16ns	Fall Time (Typ)	30 ns
Transistor Type	:N Channel	Delay Time - OFF	50ns
Delay to 1st Tap	50 ns	Voltage - Supply	0.75V
Number of Elements	1	Vgs(th) (Max) @ Id	4V @ 250µA
Voltage - Breakdown	60 V	Voltage - Threshold	:4V
Current Rating (Max)	:15.8A	Resistance - RDS(On)	:11mohm
Contact Voltage (Max)	:60V	Rds On (Max) @ Id, Vgs	11@10V mOhm
Power Dissipation (Max)	:1.9W	Propagation Delay (Max)	12 ns
Vce(on) (Max) @ Vge, Ic	60V	On-State Resistance (Max)	0.009Ohm
Current Transfer Ratio (Max)	50S	Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Switch Time (Ton, Toff) (Max)	16 ns	Drain to Source Voltage (Vdss)	60V
Current - Peak Pulse (10/1000us)	9.6 A	Current - Drain (Idss) @ Vds (Vgs=0)	9.6A
Current - Continuous Drain (Id) @ 25degC	9.6A (Ta)