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SI7370DP-T1-E3

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SI7370DP-T1-E3

Manufacturer
Description
Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R MOSFET N-CH 60V 9.6A PPAK 8SOIC MOSFET; Power (N-CH); N-Channel; 0.009 Ohms (Typ.); 0.0105 Ohms (Typ.); 50 A MOSFET, N, POWERPAK MOSFET,Power;N-Ch;VDSS60V;RDS(ON)0.009Ohm;ID9.6A;PowerPAKSO-8;PD1.9W;-55de MOSFET 60V 15.8A 0.011Ohm
Category
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Business

MOQ1Unit Pack0
Other NamesSI7370DP-T1-E3CTStandard PackageTape & Reel

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Tariff No85412900

Electrical

FET TypeMOSFET N-Channel, Metal OxideVgs (Max)±20 V
FET FeatureLogic Level GatePower - Max1.9W
Delay Time - ON16nsFall Time (Typ)30 ns
Transistor Type:N ChannelDelay Time - OFF50ns
Delay to 1st Tap50 nsVoltage - Supply0.75V
Number of Elements1Vgs(th) (Max) @ Id4V @ 250µA
Voltage - Breakdown60 VVoltage - Threshold:4V
Current Rating (Max):15.8AResistance - RDS(On):11mohm
Contact Voltage (Max):60VRds On (Max) @ Id, Vgs11@10V mOhm
Power Dissipation (Max):1.9WPropagation Delay (Max)12 ns
Vce(on) (Max) @ Vge, Ic60VOn-State Resistance (Max)0.009Ohm
Current Transfer Ratio (Max)50SGate Charge (Qg) (Max) @ Vgs57nC @ 10V
Switch Time (Ton, Toff) (Max)16 nsDrain to Source Voltage (Vdss)60V
Current - Peak Pulse (10/1000us)9.6 ACurrent - Drain (Idss) @ Vds (Vgs=0)9.6A
Current - Continuous Drain (Id) @ 25degC9.6A (Ta)

Mechanical

Width5.89Weight0.0001
PackagingTape and ReelLead StyleNo Lead
Termination:SMDPolarizationN-Channel
Mounting TypeSurface MountNumber of Pins:8
Package / Case8PowerPAK SOMaterial Finish:MSL 1 - Unlimited
Length - Overall4.9Package QuantityPowerPAK SO
Number of Positions8Shell Size - Insert1.04
Supplier Device PackagePowerPAK® SO-8

Product Info

Channel TypeEnhancementPrinted Circuit Board8

Environmental

Operating Temperature-55 to 150 °COperating Temperature - Junction+150°C

Documents & Media

PDF Document