Home
Manufacturer
genesic-semi
Discrete Semiconductors

genesic-semi- Discrete Semiconductors

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant prese

Discrete Semiconductors - 型号列表

5 parts in total

Mfr Part #	Quantity Available	Price	Packaging	Factory Pack Quantity	RoHS	Manufacturer	Transistor Type	Current - Continuous Drain (Id) @ 25degC	Package / Case	Standard Package	Drain to Source Voltage (Vdss)	Series	Operating Temperature	Power - Average Forward	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Mounting Style	Tariff No	FET Type	FET Feature	Power - Max	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Weight	Mounting Type	Number of Pins	Supplier Device Package	Fall Time	Vgs (Max)	Gate Charge	Rise Time (Typ)	Delay to 1st Tap	Switch Time (Ton, Toff) (Max)	Technology	Channel Type	Vgs(th) (Max) @ Id	Configuration
2 GA50JT12-247 GeneSiC Semiconductor	14	1: $694.96	*	-	-	-	:JFET	50A	*	30	1200V (1.2kV)	*	:175°	-	-	-	-	85412900	Silicon Carbide, Normally Off	Super Junction	5W	28 mOhm @ 50A, 100mA	:308W	0	*	:3	*	-	-	-	-	-	-	-	-	-	-
GA20JT12-263 GeneSiC Semiconductor	62	1: $244.188	Reel	50	Lead free / RoHS Compliant	GeneSiC Semiconductor	N-Channel	45 A	TO-263-7	30	-	*	-	282 W	1200 V	50 mOhms	SMD/SMT	-	-	-	-	-	-	-	-	-	-	15 ns	3.44 V	104 nC	12 ns	25 ns	15 ns	SiC	Enhancement	-	-
GA50JT17-247 GeneSiC Semiconductor	-		Tube	30	RoHS Compliant	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA05JT01-46 GeneSiC Semiconductor	18	1: $374.884	Bulk	50	RoHS Compliant	GeneSiC Semiconductor	N-Channel	9 A	TO-46-3	-	5.8 A	-	- 55 C	20 W	100 V	620 mOhms	Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30 V	Single
GA50JT06-258 GeneSiC Semiconductor	-		Bulk	10	RoHS Compliant	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-