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Microdiode Electronics (Shenzhen) Co., Ltd.

Microdiode Electronics (Shenzhen) Co., Ltd.- IGBTs

Microdiode Electronics (Shenzhen) Co., Ltd. is a national high-tech enterprise headquartered in Shenzhen, China, dedicated to the semiconductor discrete device industry. Founded in 2008, the company has grown into a recognized brand serving global customers with its MDD trademark. The company specializes in the design, R&D, production and sales of discrete semiconductors and ESD/TVS protection solutions. Its core product lines include Schottky diodes, Zener diodes, switching diodes, fast recovery diodes, bridge rectifiers, transistors, MOSFETs and silicon-controlled rectifiers. In protection devices, MDD offers an extensive range of transient voltage suppression diodes and ESD protection arrays widely used in smartphones, wearables and IoT devices. The company maintains ISO9001 and IATF16949 certified facilities to ensure automotive-grade reliability. With a strong in-house R&D team and advanced packaging lines, MDD releases hundreds of new products annually to keep pace with market trends. In China's domestic market, MDD ranks among the top-tier discrete semiconductor suppliers, competing head-to-head with international brands in TVS and small-signal diode segments. The company has also built a global distribution network covering Asia, Europe and the Americas, and is actively investing in wide-bandgap semiconductor research for future growth in new energy and 5G applications.

03

IGBTs - 型号列表

3 parts in total

Current - Continuous Drain (Id) @ 25degC

FET Type

Vgs (Max)

Vgs(th) (Max) @ Id

Rds On (Max) @ Id, Vgs

Power Dissipation (Max)

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Operating Temperature

Mfr Part #Quantity AvailablePricePart StatusFET TypeVgs (Max)FET FeatureVgs(th) (Max) @ IdRds On (Max) @ Id, VgsPower Dissipation (Max)Gate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsDrive Voltage (Max Rds On, Min Rds On)Current - Continuous Drain (Id) @ 25degCPackagingMounting TypePackage / CaseSupplier Device PackageMfrSeriesTechnologyOperating Temperature
AO3400-5.8A
AO3400-5.8A

MOSFET SOT-23 N Channel 30V

MDD

21600012000: ¥0.646ActiveN-Channel±12V-1.2V @ 250µA32mOhm @ 5.8A, 10V1.5W (Ta)10.5 nC @ 15 V30 V630 pF @ 15 V3.3V, 4.5V5.8A (Ta)Tape & Reel (TR)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23MDDSOT-23MOSFET (Metal Oxide)-55°C ~ 150°C (TJ)
SI2301-3A
SI2301-3A

MOSFET SOT-23 P Channel 20V

MDD

1710006000: ¥1.054ActiveP-Channel±10V-1V @ 250µA90mOhm @ 3A, 4.5V225mW (Ta)6.6 nC @ 10 V20 V330 pF @ 10 V3.3V, 4.5V3A (Ta)Tape & Reel (TR)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23MDDSOT-23MOSFET (Metal Oxide)-55°C ~ 150°C
SI2301S-2.3A
SI2301S-2.3A

MOSFET SOT-23 P Channel 20V

MDD

5280006000: ¥0.782ActiveP-Channel±10V-1V @ 250µA90mOhm @ 3A, 4.5V225mW (Ta)6.6 nC @ 10 V20 V330 pF @ 10 V3.3V, 4.5V2A (Ta)Tape & Reel (TR)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23MDDSOT-23MOSFET (Metal Oxide)-55°C ~ 150°C
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