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Qorvo, Inc.
Bipolar Transistors - General

Qorvo, Inc.- Bipolar Transistors - General

Qorvo is a leading semiconductor company that was founded in 2015 through the merger of TriQuint Semiconductor and RF Micro Devices. Headquartered in Greensboro, North Carolina, USA, Qorvo specializes in innovative radio frequency (RF) solutions for a wide range of applications. The company's core technologies encompass RF front-end modules, power amplifiers, switches, filters, and advanced packaging. Qorvo’s product portfolio includes high-performance GaN (gallium nitride) amplifiers for 5G base stations and defense systems, as well as BAW (bulk acoustic wave) and SAW (surface acoustic wave) filters for mobile devices. For the Internet of Things, Qorvo offers connectivity SoCs like the QPG6100 for Zigbee, Thread, and Bluetooth Low Energy, and ultra-wideband (UWB) solutions for precise location services. In the automotive sector, the company provides RF components for V2X communication, infotainment, and satellite radio. Qorvo is also a key supplier for smartphones, delivering highly integrated RF front-end modules that enable 5G connectivity, including its QPF series for Wi-Fi 6E and 7 routers. The company holds a strong position in the defense and aerospace markets, with radiation-hardened RF products that operate in extreme environments, including outer space. With manufacturing facilities and design centers worldwide, Qorvo is recognized as one of the top three global RF front-end suppliers, competing alongside Skyworks and Broadcom. Its advanced GaN technology and proprietary filter technologies give Qorvo a competitive edge in high-frequency, high-power applications.

Bipolar Transistors - General - 型号列表

85 parts in total

Mfr Part #	Quantity Available	Price	Operating Temperature	RoHS	Mounting Type	Part # Aliases	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Voltage - Breakdown	Mechanical Life	Mounting Style	Configuration	Product Category	Current - Peak Pulse (10/1000us)	Gain	Frequency	Packaging	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Rad Hardened	Package Cooled	Number of Positions	Operating Temperature - Junction	Product	Power - Rated	Voltage - Gate Trigger (Vgt) (Max)	Type	Factory Pack Quantity	Output Power	Transistor Type	Power - Average Forward	Vce(on) (Max) @ Vge, Ic	Current - Continuous Drain (Id) @ 25degC	Series	Technology	Manufacturer	Development Kit	P1dB	Noise Figure	Current Transfer Ratio (Min)
ASMA101 Transistors RF Bipolar Power RF Bipolar Trans Qorvo, Inc.	-		-	RoHS Compliant	-	1063468	-	-	-	-	Obsolete	-	-	Transistors RF Bipolar Power	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ASMA301 Transistors RF Bipolar Power RF GaAs Module Qorvo, Inc.	-		-	RoHS Compliant	-	1063473	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUNA202 Transistors RF Bipolar Power RF Bipolar Module Qorvo, Inc.	-		-	RoHS Compliant	-	1063475	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ASMA201 Transistors RF Bipolar Power RF Bipolar Trans Qorvo, Inc.	-		+ 175 C	RoHS Compliant	-	1063469	-	-	-	-	Obsolete	SMD/SMT	-	Transistors RF Bipolar Power	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ASMA203 Transistors RF Bipolar Power RF Bipolar Trans Qorvo, Inc.	-		+ 175 C	RoHS Compliant	-	1063472	-	-	-	-	Obsolete	SMD/SMT	-	Transistors RF Bipolar Power	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ASMA202 Transistors RF Bipolar Power RF Bipolar Trans Qorvo, Inc.	-		-	RoHS Compliant	-	1063470	-	-	-	-	Obsolete	-	-	Transistors RF Bipolar Power	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF4118 Trans JFET 12V 4.41A Die Qorvo, Inc.	-		-65 to N/A °C	-	Surface Mount	-	0 V	-	-22(Typ) V	12 V	-	-	-	-	4410 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF4124 Trans JFET 12V 5.88A Die Qorvo, Inc.	-		-65 to N/A °C	-	Surface Mount	-	0 V	-	-22(Typ) V	12 V	-	-	-	-	5880 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FP1189-G Trans JFET 125mA 4-Pin(3+Tab) SOT-89 Qorvo, Inc.	-		-55 to 160 °C	-	Surface Mount	-	-	4SOT-89	16 V	-	-	-	Single Dual Source	-	125 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CLY5 Trans JFET 9V 1.2A 4-Pin(3+Tab) SOT-223 Qorvo, Inc.	-		-55 to 150 °C	-	Surface Mount	-	-6 V	4SOT-223	12 V	9 V	-	-	Single Dual Source	-	1200 mA	-	-	-	9 V	1.2 A	No	SOT-223	3 +Tab	150C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF4230-SCC Trans JFET 12V 4-Pin Die Qorvo, Inc.	-		-65 to 150 °C	-	Surface Mount	-	0 V	4Die	-	12 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CLY2 Transistors RF GaAs GaAs LN MMIC Transistors RF JFET GaAs LN MMIC Trans JFET 9V 600mA 6-Pin MW T/R Qorvo, Inc.	-		+ 150 C	RoHS Compliant	Surface Mount	1014601	6 V	MW-6	-	-	-	SMD/SMT	Dual	-	-	14.5 dB	1.8 GHz	Reel	9 V	650 mA	No	MW	6	150C	RF JFET	900 mW	- 6 V	GaAs HEMT	-	-	-	-	-	-	-	-	-	-	23.5 dBm	-	-
TGF2960-SD-T/R Transistors RF GaAs DC-5.0GHz 0.5 Watt HFET TGF2960-SD-T/R Qorvo, Inc.	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF4240-SCC Trans JFET 12V 6-Pin Die Qorvo, Inc.	-		-65 to 200 °C	-	Surface Mount	-	0 V	6Die	-	12 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CFH800 Trans JFET 5.5V 160mA 4-Pin(3+Tab) SC-70 Transistors RF JFET GaAs LN Transistor Qorvo, Inc.	-		-65 to 150 °C	RoHS Compliant	Surface Mount	1032282	-2 V	4SC-70	6.5 V	5.5 V	-	SMD/SMT	Single Dual Source	Transistors RF JFET	160 mA	17 dB	1.8 GHz	Reel	5.5 V	140 mA	-	-	-	-	RF JFET	350 mW	- 2 V	GaAs pHEMT	-	-	-	-	-	-	-	-	-	-	-	0.5 dB	200 mS
TGF4124-EPU Trans JFET 12V Die Qorvo, Inc.	-		-65 to 200 °C	-	Surface Mount	-	0 V	-	-	12 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2021-04-SD Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk Qorvo, Inc.	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2960-SD Trans JFET N-CH 390mA GaAs HFET 4-Pin(3+Tab) SOT-89 T/R Qorvo, Inc.	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
QPD1008L RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN Qorvo	25	1: ¥1,360.00	+ 85 C	RoHS Compliant	-	-	-	NI-360	145 V	-	-	Screw	Single	-	-	17.5 dB	3.2 GHz	Tray	-	-	-	-	-	-	-	-	-	-	25	162 W	N-Channel	127 W	50 V	4 A	QPD	GaN SiC	Qorvo	QPD1008LPCB401	-	-	-
QPD1008 RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN Qorvo	23	1: ¥1,360.00	+ 85 C	RoHS Compliant	-	-	-	NI-360	145 V	-	-	SMD/SMT	Single	-	-	17.5 dB	3.2 GHz	Tray	-	-	-	-	-	-	-	-	-	-	25	162 W	N-Channel	127 W	50 V	4 A	QPD	GaN SiC	Qorvo	QPD1008PCB401	-	-	-

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Qorvo, Inc.- Bipolar Transistors - General

Bipolar Transistors - General - 型号列表

Part # Aliases

Operating Temperature

Package / Case

Vgs(th) (Max) @ Id

Current - Peak Pulse (10/1000us)

Vgs (Max)

Voltage - Breakdown

Configuration

Current - Drain (Idss) @ Vds (Vgs=0)

Gain

Product Category

Mounting Style

Drain to Source Voltage (Vdss)

Package Cooled

Number of Positions

Frequency

Power - Rated

Voltage - Gate Trigger (Vgt) (Max)

Packaging

Type

Development Kit