Renesas Electronics Corporation- IGBTs

Renesas Electronics Corporation is a leading global semiconductor manufacturer headquartered in Tokyo, Japan. The company was established in April 2010 through the merger of NEC Electronics and Renesas Technology, bringing together decades of experience in microelectronics. Renesas focuses on providing advanced semiconductor solutions for automotive, industrial, infrastructure, and IoT applications. Its core product portfolio includes a broad range of microcontrollers (MCUs), such as the ultra-low-power RL78, high-performance RX, and flexible RA families based on Arm Cortex-M cores. The company also offers analog and power devices, including power management ICs, MOSFETs, IGBTs, and battery management solutions, strengthened by the acquisitions of Intersil and Dialog Semiconductor. In the automotive sector, Renesas delivers R-Car system-on-chips (SoCs) for in-vehicle infotainment and advanced driver-assistance systems (ADAS), as well as vehicle control MCUs. Renesas is recognized as the world's largest supplier of automotive MCUs and consistently ranks among the top MCU vendors globally, commanding a significant market share. The company's products are known for high reliability, low power consumption, and comprehensive ecosystem support, enabling smart and efficient electronic systems. With a strong focus on innovation, Renesas invests heavily in research and development to address emerging trends like electrification, autonomous driving, and artificial intelligence at the edge. Serving customers worldwide through a robust sales and support network, Renesas aims to be a trusted partner in the semiconductor industry.

IGBTs - 型号列表

903 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	Vgs (Max)	Voltage - Breakdown	Rds On (Max) @ Id, Vgs	Current - Peak Pulse (10/1000us)	Mounting Type	Package / Case	Channel Type	Delay to 1st Tap	Propagation Delay (Max)	Switch Time (Ton, Toff) (Max)	Operating Temperature	Fall Time (Typ)	RoHS	FET Type	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Packaging	Supplier Device Package	Vgs(th) (Max) @ Id	Number of Elements	On-State Resistance (Max)	Number of Positions	Standard Package Name	EU RoHS	Power Dissipation (Max)	Width	Tab Width	Lead Style	Length - Overall	Package Quantity	Shell Size - Insert	Printed Circuit Board	MOQ	Unit Pack	Rad Hardened	Power - Rated	Vce(on) (Max) @ Vge, Ic	Current - Drain (Idss) @ Vds (Vgs=0)	Package Cooled	Type	Polarity	Standard Pack	Automotive	Leadfree Defin	Diode Configuration	Logic Voltage - VIL, VIH	Power (Watts) - Per Port	Idle Current, Typ @ 25degC	Voltage - Supply (Vcc/Vdd)	Technology	Configuration	Other Names
HAT2166H-EL-E Trans MOSFET N-CH 30V 45A 5-Pin(4+Tab) LFPAK T/R MOSFET N-CH 30V 45A LFPAK renesas electronics	10	2500: ¥6.8612	Tape & Reel	±20 V	30 V	2.9@10V mOhm	45 A	Surface Mount	5LFPAK	Enhancement	55 ns	35 ns	12 ns	-55 to 150 °C	7.5 ns	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	25W	27nC @ 4.5V	30V	4400pF @ 10V	45A (Ta)	Tape & Reel (TR)	LFPAK	2.5V @ 1mA	1	0.0029 ohm	4 +Tab	-	-	-	-	-	-	-	-	-	-	-	-	No	25 W	30 V	45 A	LFPAK	Power MOSFET	N	2,500	-	-	-	-	-	-	-	-	-	-
HAT1026R Trans MOSFET P-CH 30V 7A 8-Pin SOP renesas electronics	-		Tape & Reel	±20 V	30 V	37@10V mOhm	7 A	Surface Mount	8SOP	P	80 ns	330 ns	60 ns	-55 to 150 °C	120 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT2064R Trans MOSFET N-CH 30V 16A 8-Pin SOP renesas electronics	-		Tape & Reel	±20 V	30 V	6.3@10V mOhm	16 A	Surface Mount	8SOP	Enhancement	60 ns	35 ns	20 ns	-55 to 150 °C	16 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT2096H-EL-E Trans MOSFET N-CH 30V 0.12A 5-Pin(4+Tab) LFPAK T/R MOSFET N-CH 30V 40A LFPAK renesas electronics	7500	1: ¥5.304	Tape & Reel	±14 V	30 V	45000@10V mOhm	0.12 A	Surface Mount	5LFPAK	Enhancement	62 ns	49 ns	20 ns	-55 to 150 °C	15 ns	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	20W	40nC @ 10V	30V	2200pF @ 10V	40A (Ta)	Tape and Reel	LFPAK	-	1	45000@10V	5	LFPAK	Compliant	20000	3.95	Tab	Gull-wing	4.9	LFPAK	1(Max)	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD22S-T1-A ZENER DIODE renesas electronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ117 Trans MOSFET P-CH 400V 2A 3-Pin(3+Tab) TO-220AB renesas electronics	-		Rail / Tube	±20 V	400 V	7000@15V mOhm	2 A	Through Hole	3TO-220AB	P	45 ns	25 ns	10 ns	-55 to 150 °C	35 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3408(0)-T1B-A SINGLE MOSFET renesas electronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1306 Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220FM renesas electronics	-		Rail / Tube	±20 V	100 V	130@10V mOhm	15 A	Through Hole	3TO-220FM	Enhancement	180 ns	70 ns	10 ns	-55 to 150 °C	100 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT2279H-EL-E Trans MOSFET N-CH 80V 30A 5-Pin(4+Tab) LFPAK T/R MOSFET N-CH 80V 30A 5LFPAK renesas electronics	10	2500: ¥8.6292	Cut Tape	±20 V	80 V	12@10V mOhm	30 A	Surface Mount	5LFPAK	Enhancement	56 ns	14.5 ns	9.5 ns	-55 to 150 °C	-	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	25W	60nC @ 10V	80V	3520pF @ 10V	30A (Ta)	Tape and Reel	LFPAK	-	1	12@10V	5	LFPAK	Compliant	25000	3.95	Tab	Gull-wing	4.9	LFPAK	1(Max)	4	-	-	-	-	-	-	-	-	-	2,500	-	-	-	-	-	-	-	-	-	-
HAT1054R Trans MOSFET P-CH 20V 6A 8-Pin SOP renesas electronics	-		Tape & Reel	±12 V	20 V	0.03@4.5V Ohm	6 A	Surface Mount	8SOP	P	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT2028R Trans MOSFET N-CH 60V 4A 8-Pin SOP renesas electronics	-		Tape & Reel	±20 V	60 V	100@10V mOhm	4 A	Surface Mount	8SOP	Enhancement	35 ns	100 ns	15 ns	-55 to 150 °C	45 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAF1002-90L-E Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) LDPAK(L) renesas electronics	-		Bulk	3 V	60 V	90@10V mOhm	15 A	Through Hole	3LDPAK(L)	P	32000 ns	36000 ns	7500 ns	-55 to 150 °C	29000 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1835 Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3P renesas electronics	363	1: ¥81.60	Rail / Tube	±20 V	1500 V	7000@15V mOhm	4 A	Through Hole	3TO-3P	Enhancement	230 ns	80 ns	25 ns	-55 to 150 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP100P04PDG-E1-AY Trans MOSFET P-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R MOSFET P-CH -40V MP-25ZP/TO-263 MOSFET -40V 4mOhm AECQ TO263 renesas electronics	10	1: ¥29.106	Tape & Reel	±20 V	40 V	3.5@10V mOhm	100 A	Surface Mount	3TO-263	P	300 ns	30 ns	38 ns	-55 to 175 °C	100 ns	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Logic Level Gate	1.8W	320nC @ 10V	40V	15100pF @ 10V	100A (Tc)	Tape and Reel	TO-263	2.5V @ 1mA	1	0.0035 ohm	3	D2PAK	Compliant	1800	9.15	Tab	Gull-wing	10	TO-263	4.45	2	-	-	No	1.8 W	40 V	100 A	TO-263	Power MOSFET	P	-	NO	RoHS-conform	NO	YES	200 W	-100 A	-40 V	NP-Series	P-CH	-
NP160N04TUG-E1-AY Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) TO-263 T/R NP160N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7 renesas electronics	10	1: ¥13.60	Tape & Reel	±20 V	40 V	2@10V mOhm	160 A	Surface Mount	7TO-263	Enhancement	94 ns	67 ns	47 ns	-55 to 175 °C	19 ns	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.8W	270nC @ 10V	40V	15750pF @ 25V	160A (Tc)	Tape & Reel (TR)	TO-263-7	4V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP36P04KDG-E1-AY Trans MOSFET P-CH 40V 36A 3-Pin(2+Tab) TO-263 T/R NP36P04KDG-E1-AY MOSFET P-CH -40V -36A TO-263 renesas electronics	10	1: ¥6.80	Tape & Reel	±20 V	40 V	17@10V mOhm	36 A	Surface Mount	3TO-263	P	250 ns	10 ns	8 ns	-55 to 175 °C	140 ns	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Logic Level Gate	1.8W	55nC @ 10V	40V	2800pF @ 10V	36A (Tc)	Tape & Reel (TR)	TO-263	2.5V @ 1mA	-	-	-	-	-	-	-	-	-	-	-	-	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP36P06KDG-E1-AY Trans MOSFET P-CH 60V 36A 3-Pin(2+Tab) TO-263 T/R NP36P06KDG-E1-AY MOSFET P-CH -60V -36A TO-263 renesas electronics	10	1: ¥21.042	Tape & Reel	±20 V	60 V	29.5@10V mOhm	36 A	Surface Mount	3TO-263	P	210 ns	11 ns	8 ns	-55 to 175 °C	110 ns	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Logic Level Gate	1.8W	54nC @ 10V	60V	3100pF @ 10V	36A (Tc)	Tape & Reel (TR)	TO-263	2.5V @ 1mA	-	-	-	-	-	-	-	-	-	-	-	-	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NP36P06KDG-E1-AYDKR
NP36P06SLG-E1-AY Trans MOSFET P-CH 60V 36A 3-Pin(2+Tab) TO-252 T/R MOSFET P-CH -60V -36A TO-252 renesas electronics	10	1: ¥9.7545	Bulk	±20 V	60 V	30@10V mOhm	36 A	Surface Mount	3TO-252	P	190 ns	12 ns	7 ns	-55 to 175 °C	110 ns	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Logic Level Gate	1.2W	52nC @ 10V	60V	3200pF @ 10V	36A (Tc)	Tape and Reel	TO-252 (MP-3ZK)	-	1	0.03 ohm	3	DPAK	Compliant	1200	6.1	Tab	Gull-wing	6.5	TO-252	2.3	2	-	-	No	1.2 W	60 V	36 A	TO-252	Power MOSFET	P	-	-	-	-	-	-	-	-	-	-	-
NP48N055KLE-E1-AY Trans MOSFET N-CH 55V 48A 3-Pin(2+Tab) TO-263 T/R NP48N055KLE-E1-AY MOSFET N-CH 55V 48A TO-263 renesas electronics	10	1: ¥4.7552	Bulk	±20 V	55 V	17@10V mOhm	48 A	Surface Mount	3TO-263	Enhancement	54 ns	11 ns	17 ns	-55 to 175 °C	9.3 ns	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.8W	60nC @ 10V	55V	3000pF @ 25V	48A (Tc)	Tape & Reel (TR)	TO-263	2.5V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	1	0	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP60N055KUG-E1-AY Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) TO-263 T/R MOSFET N-CH 55V 60A TO-263 renesas electronics	10	1: ¥6.0003	Bulk	±20 V	55 V	9.4@10V mOhm	60 A	Surface Mount	3TO-263	Enhancement	79 ns	44 ns	30 ns	-55 to 175 °C	8 ns	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.8W	92nC @ 10V	55V	5600pF @ 25V	60A (Tc)	Tape & Reel (TR)	TO-263	4V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Renesas Electronics Corporation- IGBTs

IGBTs - 型号列表

Delay to 1st Tap

Rds On (Max) @ Id, Vgs

Propagation Delay (Max)

Switch Time (Ton, Toff) (Max)

Current - Peak Pulse (10/1000us)

Fall Time (Typ)

Input Capacitance (Ciss) (Max) @ Vds

Voltage - Breakdown

Gate Charge (Qg) (Max) @ Vgs

Package / Case

Current - Continuous Drain (Id) @ 25degC

On-State Resistance (Max)

Drain to Source Voltage (Vdss)

Standard Package

Vgs (Max)

Power - Max

Supplier Device Package

Power Dissipation (Max)

Power - Rated

Vgs(th) (Max) @ Id

Vce(on) (Max) @ Vge, Ic

Current - Drain (Idss) @ Vds (Vgs=0)

Package Cooled

Number of Positions

Standard Package Name

Width

Length - Overall

Package Quantity

Shell Size - Insert

RoHS

FET Type

Packaging

Mounting Type

Polarity

Channel Type

Operating Temperature

Printed Circuit Board