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semiconductors

semiconductors- Diodes

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03

Diodes - 型号列表

61 parts in total

Capacitance @ Vr, F

Current - Test

Voltage - Input (Min)

Current - Average Rectified (Io)

Package / Case

Supplier Device Package

Base Product Number

Speed

Reverse Recovery Time (trr)

Part Status

Voltage - DC Reverse (Vr) (Max)

Packaging

Mounting Type

Technology

Operating Temperature - Junction

cms-filter-header-bpn

Current - Average Rectified (Io) (per Diode)

Mfr Part #Quantity AvailablePricePart StatusSpeedCurrent - TestVoltage - Input (Min)Reverse Recovery Time (trr)Voltage - DC Reverse (Vr) (Max)PackagingMounting TypePackage / CaseSupplier Device PackageTechnologyOperating Temperature - JunctionCapacitance @ Vr, FCurrent - Average Rectified (Io)MfrSeriesBase Product Numbercms-filter-header-bpncms-filter-header-seriesDiode ConfigurationCurrent - Average Rectified (Io) (per Diode)Manufacturer
WNSC6D20650WQ
WNSC6D20650WQ

DIODE SIL CARB 650V 20A TO247-2

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)100 µA @ 650 V1.4 V @ 20 A0 ns650 VTubeThrough HoleTO-247-2TO-247-2SiC (Silicon Carbide) Schottky175°C1200pF @ 1V, 1MHz20AWeEn Semiconductors-WNSC6-----
BYC30X-600PSQ
BYC30X-600PSQ

DIODE STANDARD 600V 30A TO220F

WeEn Semiconductors

-ActiveFast Recovery =< 500ns, > 200mA (Io)10 µA @ 600 V2.75 V @ 30 A45 ns600 VTubeThrough HoleTO-220-2 Full Pack, Isolated TabTO-220FStandard175°C-30AWeEn Semiconductors-BYC30-----
BYV10MX-600PQ
BYV10MX-600PQ

DIODE STANDARD 600V 10A TO220F

WeEn Semiconductors

-ActiveFast Recovery =< 500ns, > 200mA (Io)10 µA @ 600 V2 V @ 10 A35 ns600 VTubeThrough HoleTO-220-2 Full Pack, Isolated TabTO-220FStandard175°C-10AWeEn Semiconductors-BYV10-----
NXPSC166506Q
NXPSC166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

101: ¥15.8564ObsoleteZero Recovery Time > 500mA (Io)100 µA @ 650 V1.7 V @ 16 A0 ns650 VTubeThrough HoleTO-220-2TO-220ACSiC (Silicon Carbide) Schottky175°C (Max)534pF @ 1V, 1MHz16AWeEn Semiconductors--NXPSC----
NXPSC16650B6J
NXPSC16650B6J

DIODE SIL CARBIDE 650V 16A D2PAK

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)100 µA @ 650 V1.7 V @ 16 A0 ns650 VTubeSurface MountTO-263-3, D2PAK (2 Leads + Tab), TO-263ABD2PAKSiC (Silicon Carbide) Schottky175°C (Max)534pF @ 1V, 1MHz16AWeEn Semiconductors--NXPSC----
NXPSC126506Q
NXPSC126506Q

DIODE SIL CARB 650V 12A TO220AC

WeEn Semiconductors

101: ¥28.0182ObsoleteZero Recovery Time > 500mA (Io)80 µA @ 650 V1.7 V @ 12 A0 ns650 VTubeThrough HoleTO-220-2TO-220ACSiC (Silicon Carbide) Schottky175°C (Max)380pF @ 1V, 1MHz12AWeEn Semiconductors--NXPSC----
WNSC2D06650XQ
WNSC2D06650XQ

DIODE SIL CARBIDE 650V 6A TO220F

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)30 µA @ 650 V1.7 V @ 6 A0 ns650 VTubeThrough HoleTO-220-2 Full Pack, Isolated TabTO-220FSiC (Silicon Carbide) Schottky175°C198pF @ 1V, 1MHz6AWeEn Semiconductors-WNSC2-----
WNSC16650CWQ
WNSC16650CWQ

DIODE ARRAY SIC 650V 16A TO247-3

WeEn Semiconductors

-ObsoleteNo Recovery Time > 500mA (Io)50 µA @ 650 V1.7 V @ 8 A0 ns650 VTubeThrough HoleTO-247-3TO-247-3SiC (Silicon Carbide) Schottky175°C----WNSC1--1 Pair Common Cathode16AWeEn Semiconductors
WNSC2D16650CWQ
WNSC2D16650CWQ

DIODE ARRAY SIC 650V 16A TO247-3

WeEn Semiconductors

-ObsoleteNo Recovery Time > 500mA (Io)40 µA @ 650 V1.7 V @ 8 A0 ns650 VTubeThrough HoleTO-247-3TO-247-3SiC (Silicon Carbide) Schottky175°C----WNSC2--1 Pair Common Cathode16AWeEn Semiconductors
WNSC2D20650CWQ
WNSC2D20650CWQ

DIODE ARRAY SIC 650V 20A TO247-3

WeEn Semiconductors

-ActiveNo Recovery Time > 500mA (Io)50 µA @ 650 V1.7 V @ 10 A0 ns650 VTubeThrough HoleTO-247-3TO-247-3SiC (Silicon Carbide) Schottky175°C----WNSC2--1 Pair Common Cathode20AWeEn Semiconductors
WNSC04650T6J
WNSC04650T6J

DIODE SIL CARBIDE 650V 4A 5DFN

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)25 µA @ 650 V1.7 V @ 4 A0 ns650 VTape & Reel (TR)Surface Mount4-VSFN Exposed Pad5-DFN (8x8)SiC (Silicon Carbide) Schottky175°C (Max)141pF @ 1V, 1MHz4AWeEn Semiconductors-WNSC0-----
WNSC06650T6J
WNSC06650T6J

DIODE SIL CARBIDE 650V 6A 5DFN

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)40 µA @ 650 V1.7 V @ 6 A0 ns650 VTape & Reel (TR)Surface Mount4-VSFN Exposed Pad5-DFN (8x8)SiC (Silicon Carbide) Schottky175°C (Max)190pF @ 1V, 1MHz6AWeEn Semiconductors-WNSC0-----
WNSC08650T6J
WNSC08650T6J

DIODE SIL CARBIDE 650V 8A 5DFN

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)50 µA @ 650 V1.7 V @ 8 A0 ns650 VTape & Reel (TR)Surface Mount4-VSFN Exposed Pad5-DFN (8x8)SiC (Silicon Carbide) Schottky175°C (Max)267pF @ 1V, 1MHz8AWeEn Semiconductors-WNSC0-----
WNSC10650T6J
WNSC10650T6J

DIODE SIL CARBIDE 650V 10A 5DFN

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)60 µA @ 650 V1.7 V @ 10 A0 ns650 VTape & Reel (TR)Surface Mount4-VSFN Exposed Pad5-DFN (8x8)SiC (Silicon Carbide) Schottky175°C (Max)328pF @ 1V, 1MHz10AWeEn Semiconductors--WNSC1----
WNSC12650WQ
WNSC12650WQ

DIODE SIL CARB 650V 12A TO247-2

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)60 µA @ 650 V1.7 V @ 12 A0 ns650 VTubeThrough HoleTO-247-2TO-247-2SiC (Silicon Carbide) Schottky175°C328pF @ 1V, 1MHz12AWeEn Semiconductors-WNSC1-----
WNSC2D04650DJ
WNSC2D04650DJ

DIODE SIL CARBIDE 650V 4A DPAK

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)20 µA @ 650 V1.7 V @ 4 A0 ns650 VTape & Reel (TR)Surface MountTO-252-3, DPAK (2 Leads + Tab), SC-63DPAKSiC (Silicon Carbide) Schottky175°C125pF @ 1V, 1MHz4AWeEn Semiconductors-WNSC2-----
WNSC2D04650XQ
WNSC2D04650XQ

DIODE SIL CARBIDE 650V 4A TO220F

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)20 µA @ 650 V1.7 V @ 4 A0 ns650 VTubeThrough HoleTO-220-2 Full Pack, Isolated TabTO-220FSiC (Silicon Carbide) Schottky175°C125pF @ 1V, 1MHz4AWeEn Semiconductors-WNSC2-----
WNSC2D06650DJ
WNSC2D06650DJ

DIODE SIL CARBIDE 650V 6A DPAK

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)30 µA @ 650 V1.7 V @ 6 A0 ns650 VTape & Reel (TR)Surface MountTO-252-3, DPAK (2 Leads + Tab), SC-63DPAKSiC (Silicon Carbide) Schottky175°C198pF @ 1V, 1MHz6AWeEn Semiconductors-WNSC2-----
WNSC2D06650TJ
WNSC2D06650TJ

DIODE SIL CARBIDE 650V 6A 5DFN

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)30 µA @ 650 V1.7 V @ 6 A0 ns650 VTape & Reel (TR)Surface Mount4-VSFN Exposed Pad5-DFN (8x8)SiC (Silicon Carbide) Schottky175°C198pF @ 1V, 1MHz6AWeEn Semiconductors-WNSC2-----
WNSC2D08650DJ
WNSC2D08650DJ

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

-ObsoleteZero Recovery Time > 500mA (Io)40 µA @ 650 V1.7 V @ 8 A0 ns650 VTape & Reel (TR)Surface MountTO-252-3, DPAK (2 Leads + Tab), SC-63DPAKSiC (Silicon Carbide) Schottky175°C260pF @ 1V, 1MHz8AWeEn Semiconductors-WNSC2-----
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